My Quote Request
5961-01-334-6178
20 Products
KW01065-BH
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013346178
NSN
5961-01-334-6178
KW01065-BH
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013346178
NSN
5961-01-334-6178
MFG
KOMWAVE CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
H8000045-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343003
NSN
5961-01-334-3003
H8000045-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343003
NSN
5961-01-334-3003
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1450.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N4625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343003
NSN
5961-01-334-3003
JANTX1N4625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343003
NSN
5961-01-334-3003
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 1450.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ920911J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343004
NSN
5961-01-334-3004
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: H980101-001B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
H980101-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343004
NSN
5961-01-334-3004
H980101-001B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343004
NSN
5961-01-334-3004
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: H980101-001B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
K1499
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343004
NSN
5961-01-334-3004
MFG
MICRO-METRICS INC. DBA AEROFLEX / METELICS - EAST
Description
CURRENT RATING PER CHARACTERISTIC: 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: H980101-001B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ7032HRL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343004
NSN
5961-01-334-3004
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 81.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: H980101-001B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 82577
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
EV28920-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343540
NSN
5961-01-334-3540
EV28920-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343540
NSN
5961-01-334-3540
MFG
AVO INTL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
EV28863-205
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343541
NSN
5961-01-334-3541
EV28863-205
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013343541
NSN
5961-01-334-3541
MFG
AVO INTL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
705734M6
TRANSISTOR
NSN, MFG P/N
5961013345369
NSN
5961-01-334-5369
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
TRANSISTOR
Related Searches:
SKT160-06C
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013345403
NSN
5961-01-334-5403
SKT160-06C
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013345403
NSN
5961-01-334-5403
MFG
SEMIKRON INTL INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
DN2130
TRANSISTOR
NSN, MFG P/N
5961013345743
NSN
5961-01-334-5743
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B SEAHAWK HELICOPTER
Related Searches:
DKV6524-84
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345744
NSN
5961-01-334-5744
DKV6524-84
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345744
NSN
5961-01-334-5744
MFG
SKYWORKS SOLUTIONS INC.
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B SEAHAWK HELICOPTER
Related Searches:
DKV6523-77
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345745
NSN
5961-01-334-5745
DKV6523-77
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345745
NSN
5961-01-334-5745
MFG
SKYWORKS SOLUTIONS INC.
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE ROYAL AUSTRALIAN NAVY
III END ITEM IDENTIFICATION: S70B SEAHAWK HELICOPTER
Related Searches:
14011392-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345746
NSN
5961-01-334-5746
14011392-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345746
NSN
5961-01-334-5746
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SD41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013345746
NSN
5961-01-334-5746
MFG
CLARKES SAW AND MACHINERY
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
238Z022U01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013346003
NSN
5961-01-334-6003
238Z022U01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013346003
NSN
5961-01-334-6003
MFG
DELTA DATA SYSTEMS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
943941
TRANSISTOR
NSN, MFG P/N
5961013346176
NSN
5961-01-334-6176
MFG
THALES UK LIMITED
Description
TRANSISTOR
Related Searches:
BC849B
TRANSISTOR
NSN, MFG P/N
5961013346176
NSN
5961-01-334-6176
MFG
ROHM CORP
Description
TRANSISTOR
Related Searches:
302290
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013346178
NSN
5961-01-334-6178
MFG
AMPHENOL CORPORATION DBA AMPHENOL AEROSPACE INDUSTRIAL
Description
SEMICONDUCTOR DEVICE,DIODE