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5961-01-341-0805

20 Products

7577681G4

TRANSISTOR

NSN, MFG P/N

5961013410805

NSN

5961-01-341-0805

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7577681G4

TRANSISTOR

NSN, MFG P/N

5961013410805

NSN

5961-01-341-0805

MFG

SEMITRONICS CORP

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: TIN LEADS ARE SOLDERED TO ENDS OF PIN TERMINALS TERMINAL LENGTH IS THEN 1.500 IN. MIN. AND 1.620 IN. MAX. LG
TERMINAL LENGTH: 0.100 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN

019-005265-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013408746

NSN

5961-01-340-8746

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019-005265-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013408746

NSN

5961-01-340-8746

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

SD20L15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013408746

NSN

5961-01-340-8746

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SD20L15

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013408746

NSN

5961-01-340-8746

MFG

MICRONETICS INC.

BUX51

TRANSISTOR

NSN, MFG P/N

5961013409214

NSN

5961-01-340-9214

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BUX51

TRANSISTOR

NSN, MFG P/N

5961013409214

NSN

5961-01-340-9214

MFG

ESE INC. DBA E S COMPONENTS COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

BZX55C6V2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409215

NSN

5961-01-340-9215

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BZX55C6V2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409215

NSN

5961-01-340-9215

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 69.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE

BZX55C18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409216

NSN

5961-01-340-9216

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BZX55C18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409216

NSN

5961-01-340-9216

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 24.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.1 MAXIMUM NOMINAL REGULATOR VOLTAGE

BZX55C4V7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409217

NSN

5961-01-340-9217

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BZX55C4V7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409217

NSN

5961-01-340-9217

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

2612977-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409218

NSN

5961-01-340-9218

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2612977-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409218

NSN

5961-01-340-9218

MFG

ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SPD5819TX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409218

NSN

5961-01-340-9218

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SPD5819TX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013409218

NSN

5961-01-340-9218

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

35622-1

SHIELD,SEMICONDUCTO

NSN, MFG P/N

5961013409686

NSN

5961-01-340-9686

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35622-1

SHIELD,SEMICONDUCTO

NSN, MFG P/N

5961013409686

NSN

5961-01-340-9686

MFG

TRANSISTOR DEVICES INC . DBA TDI POWER

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: 1.560 IN. LG; 1.050 IN. W; 0.265 IN. H; 2 MTG HOLES 0.250 IN. DIA

A3012733-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

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A3012733-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012733 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC

DKV6523-40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

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DKV6523-40

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

MFG

SKYWORKS SOLUTIONS INC.

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012733 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC

K3126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

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K3126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

MFG

MICRO-METRICS INC. DBA AEROFLEX / METELICS - EAST

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012733 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC

MA4ST038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

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MA4ST038

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012733 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC

V33-2734

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

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V33-2734

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410054

NSN

5961-01-341-0054

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

III END ITEM IDENTIFICATION: RECEIVER-TRANSMITTER,RT-1476A/ ARC-201
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3012733-6
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012733 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MINIMUM BREAKDOWN VOLTAGE, DC

33339-1-13

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410055

NSN

5961-01-341-0055

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33339-1-13

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410055

NSN

5961-01-341-0055

MFG

CADILLAC GAGE TEXTRON INC.

Description

DESIGN CONTROL REFERENCE: 33339-1-13
III END ITEM IDENTIFICATION: M1,XM1 TANK
MANUFACTURERS CODE: 10237
OVERALL LENGTH: 2.180 INCHES NOMINAL
THE MANUFACTURERS DATA:

33339-1-23

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410057

NSN

5961-01-341-0057

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33339-1-23

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410057

NSN

5961-01-341-0057

MFG

CADILLAC GAGE TEXTRON INC.

Description

DESIGN CONTROL REFERENCE: 33339-1-23
III END ITEM IDENTIFICATION: M1,XM1 TANK
MANUFACTURERS CODE: 10237
OVERALL LENGTH: 2.570 INCHES NOMINAL
THE MANUFACTURERS DATA:

33339-2-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410060

NSN

5961-01-341-0060

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33339-2-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410060

NSN

5961-01-341-0060

MFG

CADILLAC GAGE TEXTRON INC.

Description

DESIGN CONTROL REFERENCE: 33339-2-11
III END ITEM IDENTIFICATION: M1,XM1 TANK
MANUFACTURERS CODE: 10237
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.610 INCHES NOMINAL
THE MANUFACTURERS DATA:

BZX55C4V3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410063

NSN

5961-01-341-0063

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BZX55C4V3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013410063

NSN

5961-01-341-0063

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

7577681G0004

TRANSISTOR

NSN, MFG P/N

5961013410805

NSN

5961-01-341-0805

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7577681G0004

TRANSISTOR

NSN, MFG P/N

5961013410805

NSN

5961-01-341-0805

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: TIN LEADS ARE SOLDERED TO ENDS OF PIN TERMINALS TERMINAL LENGTH IS THEN 1.500 IN. MIN. AND 1.620 IN. MAX. LG
TERMINAL LENGTH: 0.100 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN