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5961-01-346-8745

20 Products

BA220

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013468745

NSN

5961-01-346-8745

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BA220

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013468745

NSN

5961-01-346-8745

MFG

COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP

4822 130 34221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013468745

NSN

5961-01-346-8745

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4822 130 34221

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013468745

NSN

5961-01-346-8745

MFG

PHILIPS ELECTRONICS NEDERLAND BV

645A927H01

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

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645A927H01

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

SD1831-02H

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

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SD1831-02H

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

MFG

STMICROELECTRONICS INC

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

SD1831-02H1

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

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SD1831-02H1

TRANSISTOR

NSN, MFG P/N

5961013469229

NSN

5961-01-346-9229

MFG

MLC DISTRIBUTORS LTD

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

645A757H01

TRANSISTOR

NSN, MFG P/N

5961013469230

NSN

5961-01-346-9230

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645A757H01

TRANSISTOR

NSN, MFG P/N

5961013469230

NSN

5961-01-346-9230

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

MSC76543

TRANSISTOR

NSN, MFG P/N

5961013469230

NSN

5961-01-346-9230

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MSC76543

TRANSISTOR

NSN, MFG P/N

5961013469230

NSN

5961-01-346-9230

MFG

STMICROELECTRONICS INC

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

645A757H02

TRANSISTOR

NSN, MFG P/N

5961013469231

NSN

5961-01-346-9231

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645A757H02

TRANSISTOR

NSN, MFG P/N

5961013469231

NSN

5961-01-346-9231

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

MSC76544

TRANSISTOR

NSN, MFG P/N

5961013469231

NSN

5961-01-346-9231

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MSC76544

TRANSISTOR

NSN, MFG P/N

5961013469231

NSN

5961-01-346-9231

MFG

STMICROELECTRONICS INC

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9 (ASR9)

645A757H03

TRANSISTOR

NSN, MFG P/N

5961013469232

NSN

5961-01-346-9232

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645A757H03

TRANSISTOR

NSN, MFG P/N

5961013469232

NSN

5961-01-346-9232

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9(ARSR9)

MSC76545

TRANSISTOR

NSN, MFG P/N

5961013469232

NSN

5961-01-346-9232

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MSC76545

TRANSISTOR

NSN, MFG P/N

5961013469232

NSN

5961-01-346-9232

MFG

STMICROELECTRONICS INC

Description

III END ITEM IDENTIFICATION: AIRPORT SURVEILLANCE RADAR 9(ARSR9)

100964-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

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100964-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

MFG

EFRATOM TIME & FREQUENCY PRODUCTS INC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

1N5230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

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1N5230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

1N5230A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

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1N5230A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469468

NSN

5961-01-346-9468

MFG

WILLIAMS HYDRAULIC SERVICE

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

151-0385-00

TRANSISTOR

NSN, MFG P/N

5961013469788

NSN

5961-01-346-9788

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151-0385-00

TRANSISTOR

NSN, MFG P/N

5961013469788

NSN

5961-01-346-9788

MFG

TEKTRONIX INC. DBA TEKTRONIX

2N5416-17

TRANSISTOR

NSN, MFG P/N

5961013469788

NSN

5961-01-346-9788

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2N5416-17

TRANSISTOR

NSN, MFG P/N

5961013469788

NSN

5961-01-346-9788

MFG

INTERSIL CORPORATION

P6KE39C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469789

NSN

5961-01-346-9789

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P6KE39C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013469789

NSN

5961-01-346-9789

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.1 MINIMUM BREAKDOWN VOLTAGE, DC AND 42.9 MAXIMUM BREAKDOWN VOLTAGE, DC

1906-0376

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013469790

NSN

5961-01-346-9790

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1906-0376

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013469790

NSN

5961-01-346-9790

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN

SIRB20

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013469790

NSN

5961-01-346-9790

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SIRB20

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013469790

NSN

5961-01-346-9790

MFG

HEWLETT PACKARD CO

Description

INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 PIN

SDT5004

TRANSISTOR

NSN, MFG P/N

5961013470326

NSN

5961-01-347-0326

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SDT5004

TRANSISTOR

NSN, MFG P/N

5961013470326

NSN

5961-01-347-0326

MFG

SOLITRON DEVICES INC.

Description

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN