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5961-01-348-3062

20 Products

743C4510-03

TRANSISTOR

NSN, MFG P/N

5961013483062

NSN

5961-01-348-3062

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743C4510-03

TRANSISTOR

NSN, MFG P/N

5961013483062

NSN

5961-01-348-3062

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
DESIGN CONTROL REFERENCE: 743C4510-03
III END ITEM IDENTIFICATION: F-14 ACFT
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

MUR8100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480963

NSN

5961-01-348-0963

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MUR8100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480963

NSN

5961-01-348-0963

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, PEAK

FBL-00-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480964

NSN

5961-01-348-0964

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FBL-00-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480964

NSN

5961-01-348-0964

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL REVERSE VOLTAGE, PEAK

MBR30045CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480964

NSN

5961-01-348-0964

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MBR30045CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013480964

NSN

5961-01-348-0964

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK POINT CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL REVERSE VOLTAGE, PEAK

5975-03-L00-9945

TRANSISTOR

NSN, MFG P/N

5961013482453

NSN

5961-01-348-2453

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5975-03-L00-9945

TRANSISTOR

NSN, MFG P/N

5961013482453

NSN

5961-01-348-2453

MFG

NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT

Description

DESIGN CONTROL REFERENCE: R80A-18
III END ITEM IDENTIFICATION: 6525-01-240-5830
III PURCHASE DESCRIPTION IDENTIFICATION: 0EX38-R80A-18
MANUFACTURERS CODE: 0EX38
SPECIAL FEATURES: END ITEM APPLICATION X-RAY APPARATUS,RADIOGRAPHIC,MEDICAL; MODEL CLINIX R.M.
THE MANUFACTURERS DATA:

R80A-18

TRANSISTOR

NSN, MFG P/N

5961013482453

NSN

5961-01-348-2453

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R80A-18

TRANSISTOR

NSN, MFG P/N

5961013482453

NSN

5961-01-348-2453

MFG

PICKER INTL INC

Description

DESIGN CONTROL REFERENCE: R80A-18
III END ITEM IDENTIFICATION: 6525-01-240-5830
III PURCHASE DESCRIPTION IDENTIFICATION: 0EX38-R80A-18
MANUFACTURERS CODE: 0EX38
SPECIAL FEATURES: END ITEM APPLICATION X-RAY APPARATUS,RADIOGRAPHIC,MEDICAL; MODEL CLINIX R.M.
THE MANUFACTURERS DATA:

48R137127

TRANSISTOR

NSN, MFG P/N

5961013482832

NSN

5961-01-348-2832

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48R137127

TRANSISTOR

NSN, MFG P/N

5961013482832

NSN

5961-01-348-2832

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

48R137172

TRANSISTOR

NSN, MFG P/N

5961013482833

NSN

5961-01-348-2833

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48R137172

TRANSISTOR

NSN, MFG P/N

5961013482833

NSN

5961-01-348-2833

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

48R03026A00

TRANSISTOR

NSN, MFG P/N

5961013482834

NSN

5961-01-348-2834

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48R03026A00

TRANSISTOR

NSN, MFG P/N

5961013482834

NSN

5961-01-348-2834

MFG

MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC

710995

TRANSISTOR

NSN, MFG P/N

5961013482836

NSN

5961-01-348-2836

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710995

TRANSISTOR

NSN, MFG P/N

5961013482836

NSN

5961-01-348-2836

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED TERMINALS CUT TO 0.234 IN. LONG; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

JANTX2N3716

TRANSISTOR

NSN, MFG P/N

5961013482836

NSN

5961-01-348-2836

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JANTX2N3716

TRANSISTOR

NSN, MFG P/N

5961013482836

NSN

5961-01-348-2836

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED TERMINALS CUT TO 0.234 IN. LONG; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN

710994

TRANSISTOR

NSN, MFG P/N

5961013482837

NSN

5961-01-348-2837

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710994

TRANSISTOR

NSN, MFG P/N

5961013482837

NSN

5961-01-348-2837

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED PIN TERMINALS CUT TO 0.210 IN. LONG; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JANTX2N5686

TRANSISTOR

NSN, MFG P/N

5961013482837

NSN

5961-01-348-2837

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JANTX2N5686

TRANSISTOR

NSN, MFG P/N

5961013482837

NSN

5961-01-348-2837

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED PIN TERMINALS CUT TO 0.210 IN. LONG; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JANTXV1N4620-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482839

NSN

5961-01-348-2839

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JANTXV1N4620-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482839

NSN

5961-01-348-2839

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4620-1
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 6605-01-231-9758 INERTIAL SYSTEM
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JANTX1N4121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482840

NSN

5961-01-348-2840

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JANTX1N4121

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482840

NSN

5961-01-348-2840

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4121-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: 6605-01-231-9758 INERTIAL SYSTEM
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

G391220S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482841

NSN

5961-01-348-2841

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G391220S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482841

NSN

5961-01-348-2841

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 90.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SDX20-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482841

NSN

5961-01-348-2841

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SDX20-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482841

NSN

5961-01-348-2841

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 90.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

200465-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482842

NSN

5961-01-348-2842

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200465-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482842

NSN

5961-01-348-2842

MFG

ITT CORPORATION DBA ITT GILFILLAN

JANTX1N2825B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482842

NSN

5961-01-348-2842

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JANTX1N2825B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013482842

NSN

5961-01-348-2842

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

742C1040-06-120

TRANSISTOR

NSN, MFG P/N

5961013483061

NSN

5961-01-348-3061

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742C1040-06-120

TRANSISTOR

NSN, MFG P/N

5961013483061

NSN

5961-01-348-3061

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

Description

DESIGN CONTROL REFERENCE: 742C1040-06-120
III END ITEM IDENTIFICATION: F-14 ACFT
MANUFACTURERS CODE: 86360
THE MANUFACTURERS DATA: