My Quote Request
5961-01-350-1244
20 Products
NE14008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
MFG
MICRONETICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO GOLD PLATED ALUMINUM USING A SILVER FILLED CONDUCTIVE EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
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GC41315
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO GOLD PLATED ALUMINUM USING A SILVER FILLED CONDUCTIVE EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
61205-90066
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
61205-90066
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
MFG
AAI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.016 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO A GOLD PLATED ALUMINUM GROUND PLANE USING A CONDUCTIVE SILVER FILLED EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DP05072-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
DP05072-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
MFG
SDI INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.016 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO A GOLD PLATED ALUMINUM GROUND PLANE USING A CONDUCTIVE SILVER FILLED EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
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DR05072-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
DR05072-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501245
NSN
5961-01-350-1245
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.016 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO A GOLD PLATED ALUMINUM GROUND PLANE USING A CONDUCTIVE SILVER FILLED EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
61205-90069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
61205-90069
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
MFG
AAI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
DN102147-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
DN102147-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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GC43342
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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NE14008R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502082
NSN
5961-01-350-2082
MFG
MICRONETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
JANTXV1N4105-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502083
NSN
5961-01-350-2083
JANTXV1N4105-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502083
NSN
5961-01-350-2083
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4105-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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932A994-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502084
NSN
5961-01-350-2084
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4938-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTXV1N4938-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502084
NSN
5961-01-350-2084
JANTXV1N4938-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013502084
NSN
5961-01-350-2084
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4938-1
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/169
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.074 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/169 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
558083-9
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013502085
NSN
5961-01-350-2085
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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TRANSISTOR
NSN, MFG P/N
5961013503279
NSN
5961-01-350-3279
MFG
SERVICE CENTRAL DES ACHATS DE LA MAINTENANCE
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NAVY AIR
III END ITEM IDENTIFICATION: LYNX,RF GAIN LTD
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TP3093
TRANSISTOR
NSN, MFG P/N
5961013503279
NSN
5961-01-350-3279
MFG
RF GAIN LTD
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NAVY AIR
III END ITEM IDENTIFICATION: LYNX,RF GAIN LTD
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2N6373/4
TRANSISTOR
NSN, MFG P/N
5961013503280
NSN
5961-01-350-3280
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV ADVANCED TECHNOLOGY LABORATORIES
Description
OVERALL LENGTH: 0.610 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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ZT4074/1
TRANSISTOR
NSN, MFG P/N
5961013503280
NSN
5961-01-350-3280
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
OVERALL LENGTH: 0.610 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013503281
NSN
5961-01-350-3281
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013503804
NSN
5961-01-350-3804
JANTXV1N4619
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013503804
NSN
5961-01-350-3804
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 87.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4619-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND HERMETICALLY SEALED CASE AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.050 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-M-L-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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717801343-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013503952
NSN
5961-01-350-3952
717801343-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013503952
NSN
5961-01-350-3952
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED