My Quote Request
5961-01-353-1488
20 Products
NH7555195P1
TRANSISTOR
NSN, MFG P/N
5961013531488
NSN
5961-01-353-1488
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
94-7471
TRANSISTOR
NSN, MFG P/N
5961013531488
NSN
5961-01-353-1488
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 24.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
7555544P0623
TRANSISTOR
NSN, MFG P/N
5961013531489
NSN
5961-01-353-1489
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 6 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
NH7555544P623
TRANSISTOR
NSN, MFG P/N
5961013531489
NSN
5961-01-353-1489
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 6 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SD9-4731
TRANSISTOR
NSN, MFG P/N
5961013531489
NSN
5961-01-353-1489
MFG
MICROWAVE TECHNOLOGY INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0094 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 6 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
7555228P0001
TRANSISTOR
NSN, MFG P/N
5961013531490
NSN
5961-01-353-1490
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.0055 INCHES NOMINAL
OVERALL LENGTH: 0.0157 INCHES NOMINAL
OVERALL WIDTH: 0.0138 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
7555228P1
TRANSISTOR
NSN, MFG P/N
5961013531490
NSN
5961-01-353-1490
MFG
CALIFORNIA EASTERN LABS
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.0055 INCHES NOMINAL
OVERALL LENGTH: 0.0157 INCHES NOMINAL
OVERALL WIDTH: 0.0138 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -3.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
7559268P0031
TRANSISTOR
NSN, MFG P/N
5961013531491
NSN
5961-01-353-1491
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -1.20 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.012 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
94-9089
TRANSISTOR
NSN, MFG P/N
5961013531491
NSN
5961-01-353-1491
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -1.20 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.012 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
NH7559268P31
TRANSISTOR
NSN, MFG P/N
5961013531491
NSN
5961-01-353-1491
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -1.20 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.012 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.115 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
007224-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531492
NSN
5961-01-353-1492
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
7559299P32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531493
NSN
5961-01-353-1493
7559299P32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531493
NSN
5961-01-353-1493
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
OVERALL LENGTH: 0.015 INCHES NOMINAL
OVERALL WIDTH: 0.015 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
QSCH1449
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531493
NSN
5961-01-353-1493
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
OVERALL LENGTH: 0.015 INCHES NOMINAL
OVERALL WIDTH: 0.015 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SDDSP4633-32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531493
NSN
5961-01-353-1493
SDDSP4633-32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531493
NSN
5961-01-353-1493
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.004 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
OVERALL LENGTH: 0.015 INCHES NOMINAL
OVERALL WIDTH: 0.015 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
110A328-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531494
NSN
5961-01-353-1494
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SDX328-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013531494
NSN
5961-01-353-1494
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
019-006031-004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013531639
NSN
5961-01-353-1639
019-006031-004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013531639
NSN
5961-01-353-1639
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 PIN
Related Searches:
SEN-B-723-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013531639
NSN
5961-01-353-1639
SEN-B-723-4
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013531639
NSN
5961-01-353-1639
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 PIN
Related Searches:
741C5040-39-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013532416
NSN
5961-01-353-2416
741C5040-39-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013532416
NSN
5961-01-353-2416
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
DESIGN CONTROL REFERENCE: 741C5040-39-120
III END ITEM IDENTIFICATION: 1270-01-253-9197 INDICATOR CONTROL,AIRCRAFT MODEL F-14A/B
MANUFACTURERS CODE: 86360
SPECIAL FEATURES: DEVICE IS MFG OF SILICON PER MIL-S-19500/406,REVERSE CURRENT 0.20UA DC MAX.
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.4 MINIMUM REGULATOR VOLTAGE, DC AND 12.6 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
782482
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013532966
NSN
5961-01-353-2966
782482
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013532966
NSN
5961-01-353-2966
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL TRANSISTOR