My Quote Request
5961-01-353-5519
20 Products
RS3913
TRANSISTOR
NSN, MFG P/N
5961013535519
NSN
5961-01-353-5519
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
782540
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013532967
NSN
5961-01-353-2967
782540
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013532967
NSN
5961-01-353-2967
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL TRANSISTOR
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23D893-82
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013533082
NSN
5961-01-353-3082
23D893-82
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013533082
NSN
5961-01-353-3082
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
MAJOR COMPONENTS: DIODE 16
Related Searches:
900-6164
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013534147
NSN
5961-01-353-4147
900-6164
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013534147
NSN
5961-01-353-4147
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: AN/ALR-85
Related Searches:
900-6163
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013534148
NSN
5961-01-353-4148
900-6163
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013534148
NSN
5961-01-353-4148
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: AN/ALR-85
Related Searches:
658-126
TRANSISTOR
NSN, MFG P/N
5961013534954
NSN
5961-01-353-4954
MFG
RADIOSPARES SAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: HEXFET; SWITCHING; BV-DSS; RDS(ON) ID 33A; ISOLATED CENTRAL MOUNTING HOLE; REPETITIVE AVALANCHE RATINGS; DYNAMIC DV/DT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 220.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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IRFP250
TRANSISTOR
NSN, MFG P/N
5961013534954
NSN
5961-01-353-4954
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: HEXFET; SWITCHING; BV-DSS; RDS(ON) ID 33A; ISOLATED CENTRAL MOUNTING HOLE; REPETITIVE AVALANCHE RATINGS; DYNAMIC DV/DT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 220.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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SCW090250
TRANSISTOR
NSN, MFG P/N
5961013534954
NSN
5961-01-353-4954
MFG
MORS TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
SPECIAL FEATURES: HEXFET; SWITCHING; BV-DSS; RDS(ON) ID 33A; ISOLATED CENTRAL MOUNTING HOLE; REPETITIVE AVALANCHE RATINGS; DYNAMIC DV/DT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 220.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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152-1006-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013535228
NSN
5961-01-353-5228
152-1006-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013535228
NSN
5961-01-353-5228
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DT870309A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013535228
NSN
5961-01-353-5228
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
116A164-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013535497
NSN
5961-01-353-5497
116A164-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013535497
NSN
5961-01-353-5497
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
MATERIAL: METAL
MOUNTING FACILITY TYPE AND QUANTITY: 2 CONNECTOR SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.540 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
Related Searches:
116A174-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013535498
NSN
5961-01-353-5498
116A174-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013535498
NSN
5961-01-353-5498
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
MATERIAL: METAL
MOUNTING FACILITY TYPE AND QUANTITY: 2 PLUG-IN SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.540 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
Related Searches:
7555717P0615
TRANSISTOR
NSN, MFG P/N
5961013535517
NSN
5961-01-353-5517
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0095 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
NH7555717P615
TRANSISTOR
NSN, MFG P/N
5961013535517
NSN
5961-01-353-5517
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0095 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SD9-4793
TRANSISTOR
NSN, MFG P/N
5961013535517
NSN
5961-01-353-5517
MFG
MICROWAVE TECHNOLOGY INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.016 INCHES NOMINAL
OVERALL WIDTH: 0.0095 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
7555591P0601
TRANSISTOR
NSN, MFG P/N
5961013535518
NSN
5961-01-353-5518
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.030 INCHES NOMINAL
OVERALL WIDTH: 0.009 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
NH7555591P601
TRANSISTOR
NSN, MFG P/N
5961013535518
NSN
5961-01-353-5518
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.030 INCHES NOMINAL
OVERALL WIDTH: 0.009 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SD9-4746
TRANSISTOR
NSN, MFG P/N
5961013535518
NSN
5961-01-353-5518
MFG
MICROWAVE TECHNOLOGY INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES NOMINAL
OVERALL LENGTH: 0.030 INCHES NOMINAL
OVERALL WIDTH: 0.009 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
127A223-1
TRANSISTOR
NSN, MFG P/N
5961013535519
NSN
5961-01-353-5519
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTXV2N2219A
TRANSISTOR
NSN, MFG P/N
5961013535519
NSN
5961-01-353-5519
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 80.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN