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5961-01-355-7210
20 Products
GC41549C-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557210
NSN
5961-01-355-7210
GC41549C-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557210
NSN
5961-01-355-7210
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5KP33A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013555591
NSN
5961-01-355-5591
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NTE5292AK
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013555592
NSN
5961-01-355-5592
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TIC106N
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013555615
NSN
5961-01-355-5615
TIC106N
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013555615
NSN
5961-01-355-5615
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
FEN16FT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013555709
NSN
5961-01-355-5709
FEN16FT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013555709
NSN
5961-01-355-5709
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.103 INCHES MINIMUM AND 1.163 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
JANTXVIN9658-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013555947
NSN
5961-01-355-5947
JANTXVIN9658-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013555947
NSN
5961-01-355-5947
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXVIN9658-1
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-JANTXVIN9658-1 GOVERNMENT SPECIFICATION
Related Searches:
S25A340
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013556119
NSN
5961-01-355-6119
S25A340
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013556119
NSN
5961-01-355-6119
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 QUICK DISCONNECT, MALE
Related Searches:
1N3317A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013556544
NSN
5961-01-355-6544
MFG
FREESCALE SEMICONDUCTOR INC.
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
D8HZ10373-A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556854
NSN
5961-01-355-6854
D8HZ10373-A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556854
NSN
5961-01-355-6854
MFG
FORD MOTOR CO
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
GY-1317
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556854
NSN
5961-01-355-6854
GY-1317
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556854
NSN
5961-01-355-6854
MFG
FORD MOTOR CRAFT
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
D8HZ10377-A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556855
NSN
5961-01-355-6855
D8HZ10377-A
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556855
NSN
5961-01-355-6855
MFG
FORD MOTOR CO
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
GY-1318
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556855
NSN
5961-01-355-6855
GY-1318
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013556855
NSN
5961-01-355-6855
MFG
FORD MOTOR CRAFT
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
501076-1
TRANSISTOR
NSN, MFG P/N
5961013557205
NSN
5961-01-355-7205
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
TRANSISTOR
Related Searches:
90006
TRANSISTOR
NSN, MFG P/N
5961013557205
NSN
5961-01-355-7205
MFG
RF PRODUCTS INC
Description
TRANSISTOR
Related Searches:
A34U11552-1
TRANSISTOR
NSN, MFG P/N
5961013557206
NSN
5961-01-355-7206
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ADAPTER SOCKET PROVIDED
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
A34U11552-2
TRANSISTOR
NSN, MFG P/N
5961013557207
NSN
5961-01-355-7207
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.25 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ADAPTER SOCKET PROVIDED
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
1535430U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557208
NSN
5961-01-355-7208
MFG
OSHKOSH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
05-4417-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557209
NSN
5961-01-355-7209
MFG
SOUTHWEST RESEARCH INSTITUTE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
GC41549-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557209
NSN
5961-01-355-7209
GC41549-155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557209
NSN
5961-01-355-7209
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
05-4417-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013557210
NSN
5961-01-355-7210
MFG
SOUTHWEST RESEARCH INSTITUTE INC
Description
SEMICONDUCTOR DEVICE,DIODE