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5961-01-356-4296
20 Products
OM1468SC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564296
NSN
5961-01-356-4296
OM1468SC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564296
NSN
5961-01-356-4296
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: AIRCRAFT, HERCULES C-130
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM
OVERALL WIDTH: 0.685 INCHES MINIMUM AND 0.695 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN; WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR
Related Searches:
7908689-12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564297
NSN
5961-01-356-4297
7908689-12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564297
NSN
5961-01-356-4297
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 7908689-12
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.770 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 90536-7908689 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 NOMINAL FORWARD VOLTAGE, DC ALL SEMICONDUCTOR
Related Searches:
MN91136
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564297
NSN
5961-01-356-4297
MN91136
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013564297
NSN
5961-01-356-4297
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 90536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 7908689-12
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES NOMINAL
OVERALL LENGTH: 0.770 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA: 90536-7908689 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.5 NOMINAL FORWARD VOLTAGE, DC ALL SEMICONDUCTOR
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1906-0354
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564383
NSN
5961-01-356-4383
1906-0354
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564383
NSN
5961-01-356-4383
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 350.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 REVERSE VOLTAGE, PEAK
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
OVERALL WIDTH: 0.060 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
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ES4867-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564384
NSN
5961-01-356-4384
ES4867-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564384
NSN
5961-01-356-4384
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
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S50A380X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564384
NSN
5961-01-356-4384
S50A380X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013564384
NSN
5961-01-356-4384
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
Related Searches:
204-0007-020
TRANSISTOR
NSN, MFG P/N
5961013565259
NSN
5961-01-356-5259
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
RC204-0007-020
TRANSISTOR
NSN, MFG P/N
5961013565259
NSN
5961-01-356-5259
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
619915-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565261
NSN
5961-01-356-5261
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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MA47915
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565261
NSN
5961-01-356-5261
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
619915-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565262
NSN
5961-01-356-5262
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
MA47280
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565262
NSN
5961-01-356-5262
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
7571838-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013565316
NSN
5961-01-356-5316
7571838-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013565316
NSN
5961-01-356-5316
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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SEN-B-995
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013565316
NSN
5961-01-356-5316
SEN-B-995
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013565316
NSN
5961-01-356-5316
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
278369
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013565329
NSN
5961-01-356-5329
MFG
B V R TECHNOLOGIES CO . DIV BVR TECHNOLOGIES DIVISION
Description
MAJOR COMPONENTS: DIODE 2; TERMINAL BOARD 1
Related Searches:
GZ44717C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565426
NSN
5961-01-356-5426
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N975A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565868
NSN
5961-01-356-5868
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-204AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
P10055-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013565868
NSN
5961-01-356-5868
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-204AA
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
ADC-400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013566110
NSN
5961-01-356-6110
MFG
MERCANTILE CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
151-1195-01
TRANSISTOR
NSN, MFG P/N
5961013566536
NSN
5961-01-356-6536
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR