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5961-01-361-2709
20 Products
V12603
TRANSISTOR
NSN, MFG P/N
5961013612709
NSN
5961-01-361-2709
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6967
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.610 INCHES MINIMUM
OVERALL LENGTH: 1.092 INCHES MINIMUM AND 1.131 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SPD1003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013611235
NSN
5961-01-361-1235
SPD1003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013611235
NSN
5961-01-361-1235
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.815 INCHES MINIMUM AND 0.835 INCHES MAXIMUM
OVERALL WIDTH: 0.685 INCHES MINIMUM AND 0.695 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
687-3600-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013611426
NSN
5961-01-361-1426
687-3600-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013611426
NSN
5961-01-361-1426
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL LENGTH: 0.840 INCHES NOMINAL
OVERALL WIDTH: 0.640 INCHES NOMINAL
STYLE DESIGNATOR: 90B RIGHT ANGLE, INSERTION MOUNTED
UNTHREADED MOUNTING HOLE DIAMETER: 0.093 INCHES NOMINAL ALL MOUNTING FACILITIES
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MA44642A-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611559
NSN
5961-01-361-1559
MA44642A-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611559
NSN
5961-01-361-1559
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, DC
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5962-8671102XX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611560
NSN
5961-01-361-1560
5962-8671102XX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611560
NSN
5961-01-361-1560
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 NOMINAL NOMINAL REGULATOR VOLTAGE
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RC252-9501-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611560
NSN
5961-01-361-1560
RC252-9501-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013611560
NSN
5961-01-361-1560
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.219 INCHES MAXIMUM
OVERALL LENGTH: 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTXV2N6786
TRANSISTOR
NSN, MFG P/N
5961013612299
NSN
5961-01-361-2299
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6786
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/556
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/556B GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-S-19500H SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 400.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 400.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
0406-0008
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013612301
NSN
5961-01-361-2301
MFG
AVIONIC INSTRUMENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 NOMINAL BREAKDOWN VOLTAGE, DC
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1N6373
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013612301
NSN
5961-01-361-2301
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
1N5922D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013612302
NSN
5961-01-361-2302
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL REGULATOR VOLTAGE, DC
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1N5919D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013612303
NSN
5961-01-361-2303
MFG
FREESCALE SEMICONDUCTOR INC.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO41
Related Searches:
2690663-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612308
NSN
5961-01-361-2308
2690663-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612308
NSN
5961-01-361-2308
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: TRIAC,SELECTEDITEM(CONDITIONING & BURN-IN,CASE STYLE TO-5/T0-39
III END ITEM IDENTIFICATION: AN/APQ-171
Related Searches:
2N5756
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612308
NSN
5961-01-361-2308
2N5756
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612308
NSN
5961-01-361-2308
MFG
HI-TRON SEMICONDUCTOR CORP
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: TRIAC,SELECTEDITEM(CONDITIONING & BURN-IN,CASE STYLE TO-5/T0-39
III END ITEM IDENTIFICATION: AN/APQ-171
Related Searches:
72496
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612308
NSN
5961-01-361-2308
MFG
HARRIS CORP SEMICONDUCTOR SECTOR
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: TRIAC,SELECTEDITEM(CONDITIONING & BURN-IN,CASE STYLE TO-5/T0-39
III END ITEM IDENTIFICATION: AN/APQ-171
Related Searches:
MAC210-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612309
NSN
5961-01-361-2309
MAC210-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013612309
NSN
5961-01-361-2309
MFG
FREESCALE SEMICONDUCTOR INC.
Description
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO220AB
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
94025104
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013612462
NSN
5961-01-361-2462
94025104
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013612462
NSN
5961-01-361-2462
MFG
ROCKWELL AUTOMATION INC.
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
OVERALL WIDTH: 0.085 INCHES NOMINAL
Related Searches:
DF04M-005
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013612462
NSN
5961-01-361-2462
DF04M-005
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013612462
NSN
5961-01-361-2462
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, PEAK
OVERALL WIDTH: 0.085 INCHES NOMINAL
Related Searches:
168652-01
TRANSISTOR
NSN, MFG P/N
5961013612709
NSN
5961-01-361-2709
MFG
GE AVIATION SYSTEMS LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6967
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.610 INCHES MINIMUM
OVERALL LENGTH: 1.092 INCHES MINIMUM AND 1.131 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
94-7253
TRANSISTOR
NSN, MFG P/N
5961013612709
NSN
5961-01-361-2709
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6967
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.610 INCHES MINIMUM
OVERALL LENGTH: 1.092 INCHES MINIMUM AND 1.131 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
JANTX2N6967
TRANSISTOR
NSN, MFG P/N
5961013612709
NSN
5961-01-361-2709
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6967
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/569
OVERALL HEIGHT: 0.610 INCHES MINIMUM
OVERALL LENGTH: 1.092 INCHES MINIMUM AND 1.131 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/569 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE