My Quote Request
5961-01-362-9718
20 Products
G494565-468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629718
NSN
5961-01-362-9718
G494565-468
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629718
NSN
5961-01-362-9718
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.1 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.1 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
1668AS4D3-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013628403
NSN
5961-01-362-8403
1668AS4D3-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013628403
NSN
5961-01-362-8403
MFG
NAVAL AIR SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 86.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 1100.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT AND 2.00 AMPERES NOMINAL FORWARD GATE CURRENT ALL SEMICONDUCTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.181 INCHES MAXIMUM
OVERALL LENGTH: 3.681 INCHES MAXIMUM
OVERALL WIDTH: 1.024 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 5.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 960.0 NOMINAL OFF-STATE VOLTAGE, DC AND 1200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND
~1: 960.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 10.0 NOMINAL GATE VOLTAGE, DC ALL SEMICONDUCTOR
Related Searches:
CM431255
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013628403
NSN
5961-01-362-8403
CM431255
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013628403
NSN
5961-01-362-8403
MFG
POWEREX INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 86.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 1100.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT AND 2.00 AMPERES NOMINAL FORWARD GATE CURRENT ALL SEMICONDUCTOR
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.181 INCHES MAXIMUM
OVERALL LENGTH: 3.681 INCHES MAXIMUM
OVERALL WIDTH: 1.024 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 5.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 960.0 NOMINAL OFF-STATE VOLTAGE, DC AND 1200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND
~1: 960.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 10.0 NOMINAL GATE VOLTAGE, DC ALL SEMICONDUCTOR
Related Searches:
379160-1
TRANSISTOR
NSN, MFG P/N
5961013628723
NSN
5961-01-362-8723
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
Related Searches:
379161-1
TRANSISTOR
NSN, MFG P/N
5961013628724
NSN
5961-01-362-8724
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
Related Searches:
379162-1
TRANSISTOR
NSN, MFG P/N
5961013628725
NSN
5961-01-362-8725
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
Related Searches:
1N1512A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013628726
NSN
5961-01-362-8726
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BTA12-700
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013628764
NSN
5961-01-362-8764
BTA12-700
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013628764
NSN
5961-01-362-8764
MFG
SGS THOMPSON/INMOS CORP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1S953
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629663
NSN
5961-01-362-9663
MFG
NEC ELECTRONICS U S A INC ELECTRON DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
519
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629663
NSN
5961-01-362-9663
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DDD010051
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629663
NSN
5961-01-362-9663
MFG
IWATSU ELECTRIC CO.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
750595
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013629714
NSN
5961-01-362-9714
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
5907685
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629715
NSN
5961-01-362-9715
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NH5907685
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629715
NSN
5961-01-362-9715
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PR1522
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629715
NSN
5961-01-362-9715
MFG
OPTEK TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G339165-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629716
NSN
5961-01-362-9716
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 18.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.100 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 420.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
G494565-456
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629716
NSN
5961-01-362-9716
G494565-456
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629716
NSN
5961-01-362-9716
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 18.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.100 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 420.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
G339358-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629717
NSN
5961-01-362-9717
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SPECIALLY SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
G494565-461
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629717
NSN
5961-01-362-9717
G494565-461
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629717
NSN
5961-01-362-9717
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SPECIALLY SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
G431470-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013629718
NSN
5961-01-362-9718
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED AND TESTED FOR THE MILSTAR LRIP PROGRAM
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G494565 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.1 MAXIMUM NOMINAL REGULATOR VOLTAGE AND 1.1 MAXIMUM FORWARD VOLTAGE, DC