My Quote Request
5961-01-365-3742
20 Products
JANTX1N5533B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013653742
NSN
5961-01-365-3742
JANTX1N5533B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013653742
NSN
5961-01-365-3742
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 29.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5533B-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013653742
NSN
5961-01-365-3742
MFG
LEWCO ELECTRIC CO INC
Description
CURRENT RATING PER CHARACTERISTIC: 29.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5533B-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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JANTX1N5533B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013653742
NSN
5961-01-365-3742
JANTX1N5533B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013653742
NSN
5961-01-365-3742
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 29.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5533B-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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990004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013654186
NSN
5961-01-365-4186
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 990004
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
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48P246142-01
TRANSISTOR
NSN, MFG P/N
5961013655028
NSN
5961-01-365-5028
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL AND LOCATION: METALLIZATION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.889 INCHES MINIMUM AND 0.909 INCHES MAXIMUM
OVERALL WIDTH: 0.710 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 875.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 98738-48P246142 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SD1540-25
TRANSISTOR
NSN, MFG P/N
5961013655028
NSN
5961-01-365-5028
MFG
STMICROELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 22.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL AND LOCATION: METALLIZATION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.889 INCHES MINIMUM AND 0.909 INCHES MAXIMUM
OVERALL WIDTH: 0.710 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 875.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 98738-48P246142 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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3131516G001
TRANSISTOR
NSN, MFG P/N
5961013655029
NSN
5961-01-365-5029
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.40 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND W/HEAT SINK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3131516 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961013655029
NSN
5961-01-365-5029
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.40 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE AND W/HEAT SINK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3131516 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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3130551G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655030
NSN
5961-01-365-5030
3130551G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655030
NSN
5961-01-365-5030
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.030 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3130551 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL FORWARD VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655030
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5961-01-365-5030
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.030 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28527-3130551 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL FORWARD VOLTAGE, DC
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3131517G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655032
NSN
5961-01-365-5032
3131517G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655032
NSN
5961-01-365-5032
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 4
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES NOMINAL
OVERALL LENGTH: 1.925 INCHES NOMINAL
OVERALL WIDTH: 0.475 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 28527-3131517 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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NSN, MFG P/N
5961013655032
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5961-01-365-5032
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655032
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5961-01-365-5032
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 4
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL DRAIN CURRENT ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.270 INCHES NOMINAL
OVERALL LENGTH: 1.925 INCHES NOMINAL
OVERALL WIDTH: 0.475 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.188 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 28527-3131517 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
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NSN, MFG P/N
5961013655033
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5961-01-365-5033
0M3073SC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655033
NSN
5961-01-365-5033
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL FORWARD CURRENT, DC SINGLE SEMICONDUCTOR DEVICE DIODE 4.50 AMPERES NOMINAL DRAIN CURRENT SINGLE TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.820 INCHES NOMINAL
OVERALL WIDTH: 0.690 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON SINGLE SEMICONDUCTOR DEVICE DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 NOMINAL FORWARD VOLTAGE, DC SINGLE SEMICONDUCTOR DEVICE DIODE 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE SINGLE TRANSISTOR
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5961013655033
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5961013655033
NSN
5961-01-365-5033
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL FORWARD CURRENT, DC SINGLE SEMICONDUCTOR DEVICE DIODE 4.50 AMPERES NOMINAL DRAIN CURRENT SINGLE TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.820 INCHES NOMINAL
OVERALL WIDTH: 0.690 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON SINGLE SEMICONDUCTOR DEVICE DIODE SILICON SINGLE TRANSISTOR
SPECIAL FEATURES: SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 NOMINAL FORWARD VOLTAGE, DC SINGLE SEMICONDUCTOR DEVICE DIODE 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE SINGLE TRANSISTOR
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990005
TRANSISTOR
NSN, MFG P/N
5961013655187
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5961-01-365-5187
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 990005
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
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SEMICONDUCTOR DEVICE,DIODE
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446046-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013655188
NSN
5961-01-365-5188
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: TDWR, TERMINAL DOPPLER WEATHER RADAR, CONTRACT FA01-89-C-00002
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SEMICONDUCTOR DEVICE,DIODE
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5961013655188
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5961-01-365-5188
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SEMICONDUCTOR DEVICE,DIODE
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5961013655188
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5961-01-365-5188
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MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
III END ITEM IDENTIFICATION: TDWR, TERMINAL DOPPLER WEATHER RADAR, CONTRACT FA01-89-C-00002
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90-23-118092
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013655345
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5961-01-365-5345
90-23-118092
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013655345
NSN
5961-01-365-5345
MFG
THOMAS & BETTS POWER SOLUTIONS LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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90-23-118095
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655419
NSN
5961-01-365-5419
90-23-118095
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013655419
NSN
5961-01-365-5419
MFG
THOMAS & BETTS POWER SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICES,UNITIZED
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TRANSISTOR
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5961013655561
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5961-01-365-5561
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THOMAS & BETTS POWER SOLUTIONS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
TRANSFER RATIO: 100.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER