My Quote Request
5961-01-367-5820
20 Products
4012990-2
TRANSISTOR
NSN, MFG P/N
5961013675820
NSN
5961-01-367-5820
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
TRANSISTOR
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GC47088-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671966
NSN
5961-01-367-1966
GC47088-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671966
NSN
5961-01-367-1966
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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7555286P0601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671967
NSN
5961-01-367-1967
7555286P0601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671967
NSN
5961-01-367-1967
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS
III END ITEM IDENTIFICATION: B-2 AIRCRAFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.400 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 0.98 MAXIMUM FORWARD VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671967
NSN
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MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS
III END ITEM IDENTIFICATION: B-2 AIRCRAFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.400 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 0.98 MAXIMUM FORWARD VOLTAGE, DC
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7555289P0603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671968
NSN
5961-01-367-1968
7555289P0603
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671968
NSN
5961-01-367-1968
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
OVERALL WIDTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671968
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GC41374-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671968
NSN
5961-01-367-1968
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL LENGTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
OVERALL WIDTH: 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 UNTHREADED HOLE AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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88-21831
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671969
NSN
5961-01-367-1969
MFG
DEPARTMENT OF DEFENSE PROJECT MANAGER-MOBILE ELECTRIC POWER
Description
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL HEIGHT: 1.719 INCHES MINIMUM AND 1.781 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 264.0 NOMINAL FORWARD VOLTAGE, TOTAL RMS
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5961013671969
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5961-01-367-1969
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671969
NSN
5961-01-367-1969
MFG
LIMA ELECTRIC CO INC THE
Description
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL HEIGHT: 1.719 INCHES MINIMUM AND 1.781 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 264.0 NOMINAL FORWARD VOLTAGE, TOTAL RMS
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013671969
NSN
5961-01-367-1969
MFG
DEAN TECHNOLOGY INC. DBA CKE
Description
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL HEIGHT: 1.719 INCHES MINIMUM AND 1.781 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 264.0 NOMINAL FORWARD VOLTAGE, TOTAL RMS
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RECTIFIER,SEMICONDUCTOR DEVICE
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5961013672522
NSN
5961-01-367-2522
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013672522
NSN
5961-01-367-2522
MFG
STANDBY POWER ACQUISITION INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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305-0696
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013672523
NSN
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305-0696
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013672523
NSN
5961-01-367-2523
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
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NSN
5961-01-367-2523
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013672523
NSN
5961-01-367-2523
MFG
STANDBY POWER ACQUISITION INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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86466-59S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013672650
NSN
5961-01-367-2650
86466-59S
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013672650
NSN
5961-01-367-2650
MFG
RELIANCE ELECTRIC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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2N3811
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013672825
NSN
5961-01-367-2825
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013672825
NSN
5961-01-367-2825
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: NSN 5821-01-387-0594; RECEIVER-TRANSMITTER, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR - PNP, DUAL AMPLIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
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5961013672825
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013672825
NSN
5961-01-367-2825
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III END ITEM IDENTIFICATION: NSN 5821-01-387-0594; RECEIVER-TRANSMITTER, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR - PNP, DUAL AMPLIFIER
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.935 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013672826
NSN
5961-01-367-2826
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N5711
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/444
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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RECTIFIER,SEMICONDUCTOR DEVICE
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5961013674212
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48105-002
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013674212
NSN
5961-01-367-4212
MFG
GAI-TRONICS CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 FORWARD VOLTAGE, TOTAL RMS
MATERIAL: SILICON
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TRANSISTOR
NSN, MFG P/N
5961013675462
NSN
5961-01-367-5462
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: USED ON M1 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377755
SPEC/STD CONTROLLING DATA:
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TRANSISTOR
NSN, MFG P/N
5961013675462
NSN
5961-01-367-5462
MFG
CRYSTALONICS INC.
Description
III END ITEM IDENTIFICATION: USED ON M1 TANK
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 9377755
SPEC/STD CONTROLLING DATA:
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TRANSISTOR
NSN, MFG P/N
5961013675819
NSN
5961-01-367-5819
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR