My Quote Request
5961-01-373-8271
20 Products
BYV26E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013738271
NSN
5961-01-373-8271
MFG
PHILIPS SEMICONDUCTORS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SS-32578
TRANSISTOR
NSN, MFG P/N
5961013737052
NSN
5961-01-373-7052
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.00 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 90.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
MRF604
TRANSISTOR
NSN, MFG P/N
5961013737053
NSN
5961-01-373-7053
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.850 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.5 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
SS-32594
TRANSISTOR
NSN, MFG P/N
5961013737053
NSN
5961-01-373-7053
MFG
THALES COMMUNICATIONS INC.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.650 INCHES MINIMUM AND 0.850 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.5 NOMINAL COLLECTOR SUPPLY VOLTAGE
Related Searches:
JANTXV1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737054
NSN
5961-01-373-7054
JANTXV1N4565A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737054
NSN
5961-01-373-7054
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 0.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4565A
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.018 INCHES MINIMUM AND 0.023 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/453 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.08 MINIMUM REGULATOR VOLTAGE, DC AND 6.72 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
JANTXV1N6327
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737055
NSN
5961-01-373-7055
JANTXV1N6327
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737055
NSN
5961-01-373-7055
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6327
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
BBY31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737056
NSN
5961-01-373-7056
MFG
PHILLIPS COMPONENTS INC
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-123
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE TERMINAL NOT CONNECTED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SS-29031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737056
NSN
5961-01-373-7056
MFG
THALES COMMUNICATIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-123
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ONE TERMINAL NOT CONNECTED; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SL3145CMP
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013737057
NSN
5961-01-373-7057
SL3145CMP
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013737057
NSN
5961-01-373-7057
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC SINGLE TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON SINGLE TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC SINGLE TRANSISTOR
Related Searches:
SS-365377
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013737057
NSN
5961-01-373-7057
SS-365377
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013737057
NSN
5961-01-373-7057
MFG
THALES COMMUNICATIONS INC.
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC SINGLE TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON SINGLE TRANSISTOR
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC SINGLE TRANSISTOR
Related Searches:
IRF830
TRANSISTOR
NSN, MFG P/N
5961013737529
NSN
5961-01-373-7529
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
2SK384
TRANSISTOR
NSN, MFG P/N
5961013737530
NSN
5961-01-373-7530
MFG
HITACHI KOKUSAI ELECTRIC AMERICA LTD .
Description
TRANSISTOR
Related Searches:
2SD560
TRANSISTOR
NSN, MFG P/N
5961013737531
NSN
5961-01-373-7531
MFG
NEC AMERICA INC
Description
TRANSISTOR
Related Searches:
IRF241
TRANSISTOR
NSN, MFG P/N
5961013737532
NSN
5961-01-373-7532
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
KTC2235
TRANSISTOR
NSN, MFG P/N
5961013737533
NSN
5961-01-373-7533
MFG
TELEVIDEO SYSTEMS INC
Description
TRANSISTOR
Related Searches:
2SD986L
TRANSISTOR
NSN, MFG P/N
5961013737534
NSN
5961-01-373-7534
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
TRANSISTOR
Related Searches:
KTC200Y
TRANSISTOR
NSN, MFG P/N
5961013737535
NSN
5961-01-373-7535
MFG
TELEVIDEO SYSTEMS INC
Description
TRANSISTOR
Related Searches:
SICT-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737792
NSN
5961-01-373-7792
MFG
SEMICON COMPONENTS INC
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 6.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
SICT-12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013737793
NSN
5961-01-373-7793
MFG
SEMICON COMPONENTS INC
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 14.1 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
SUES1103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013738270
NSN
5961-01-373-8270
MFG
SEMICON COMPONENTS INC
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE NORWEGIAN NAVY
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE