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5961-01-376-7516
20 Products
JANTX2N6678
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NSN, MFG P/N
5961013767516
NSN
5961-01-376-7516
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.312 INCHES MINIMUM AND 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
TEST DATA DOCUMENT: 89954-348A1245 DRAWING
TRANSFER RATIO: 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 650.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE
~1: VOLTAGE, STATIC, COLLECTOR OPEN
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5961-01-376-7531
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5961013767531
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RAYTHEON COMPANY
Description
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INTERSIL INC SUB OF GENERAL ELECTRIC CO
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DRS ICAS, LLC
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BAE SYSTEMS CONTROLS INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III CUBIC MEASURE: 0.010 CUBIC INCHES
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.067 MINIMUM REGULATOR VOLTAGE, DC AND 6.324 MAXIMUM REGULATOR VOLTAGE, DC
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Description
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OVERALL DIAMETER: 0.760 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
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Description
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OVERALL DIAMETER: 0.760 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
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MFG
RAYTHEON COMPANY
Description
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OVERALL DIAMETER: 0.760 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
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Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
OVERALL DIAMETER: 0.760 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
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ITT CORPORATION DBA ITT GILFILLAN
Description
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5961013768592
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ITT CORPORATION DBA ITT GILFILLAN
Description
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5961013768593
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AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
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