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5961-01-392-6767

20 Products

UM9913

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013926767

NSN

5961-01-392-6767

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UM9913

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013926767

NSN

5961-01-392-6767

MFG

MICRO USPD INC

Description

NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON

NHA531A240-301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013926767

NSN

5961-01-392-6767

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NHA531A240-301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013926767

NSN

5961-01-392-6767

MFG

DLA LAND AND MARITIME

Description

NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON

2098993-002

SOLID STATE SCR

NSN, MFG P/N

5961013926833

NSN

5961-01-392-6833

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2098993-002

SOLID STATE SCR

NSN, MFG P/N

5961013926833

NSN

5961-01-392-6833

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

5037-328

SOLID STATE SCR

NSN, MFG P/N

5961013926833

NSN

5961-01-392-6833

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5037-328

SOLID STATE SCR

NSN, MFG P/N

5961013926833

NSN

5961-01-392-6833

MFG

RAYTHEON COMPANY DBA RAYTHEON

2098993-004

SOLID STATE SCR

NSN, MFG P/N

5961013926834

NSN

5961-01-392-6834

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2098993-004

SOLID STATE SCR

NSN, MFG P/N

5961013926834

NSN

5961-01-392-6834

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

5037-330

SOLID STATE SCR

NSN, MFG P/N

5961013926834

NSN

5961-01-392-6834

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5037-330

SOLID STATE SCR

NSN, MFG P/N

5961013926834

NSN

5961-01-392-6834

MFG

RAYTHEON COMPANY DBA RAYTHEON

2098993-003

SOLID STATE SCR

NSN, MFG P/N

5961013926835

NSN

5961-01-392-6835

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2098993-003

SOLID STATE SCR

NSN, MFG P/N

5961013926835

NSN

5961-01-392-6835

MFG

CASTLE EQUIPMENT CO

5037-329

SOLID STATE SCR

NSN, MFG P/N

5961013926835

NSN

5961-01-392-6835

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5037-329

SOLID STATE SCR

NSN, MFG P/N

5961013926835

NSN

5961-01-392-6835

MFG

RAYTHEON COMPANY DBA RAYTHEON

2098993-001

SOLID STATE SCR

NSN, MFG P/N

5961013926836

NSN

5961-01-392-6836

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2098993-001

SOLID STATE SCR

NSN, MFG P/N

5961013926836

NSN

5961-01-392-6836

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

5037-406

SOLID STATE SCR

NSN, MFG P/N

5961013926836

NSN

5961-01-392-6836

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5037-406

SOLID STATE SCR

NSN, MFG P/N

5961013926836

NSN

5961-01-392-6836

MFG

RAYTHEON COMPANY DBA RAYTHEON

2098909-001

LIMITER MODULE

NSN, MFG P/N

5961013926844

NSN

5961-01-392-6844

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2098909-001

LIMITER MODULE

NSN, MFG P/N

5961013926844

NSN

5961-01-392-6844

MFG

L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC. DIV L-3 COMMUNICATIONS ELECTRON TECHNOLOGIES INC

5037-408

LIMITER MODULE

NSN, MFG P/N

5961013926844

NSN

5961-01-392-6844

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5037-408

LIMITER MODULE

NSN, MFG P/N

5961013926844

NSN

5961-01-392-6844

MFG

RAYTHEON COMPANY DBA RAYTHEON

BZX84C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927518

NSN

5961-01-392-7518

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BZX84C5V1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927518

NSN

5961-01-392-7518

MFG

FREESCALE SEMICONDUCTOR INC.

BZX84C5V1E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927518

NSN

5961-01-392-7518

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BZX84C5V1E

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927518

NSN

5961-01-392-7518

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

MDDA14-1-MZ

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013927717

NSN

5961-01-392-7717

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MDDA14-1-MZ

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013927717

NSN

5961-01-392-7717

MFG

WECO ELECTRICAL CONNECTORS INC

Description

III END ITEM IDENTIFICATION: CF18 STORES MANAGEMENT TEST STATION
MAJOR COMPONENTS: MOUNTING RAIL 1,DIODES 14,ANODE 1
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL

MDDE08-1-MZ

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013927718

NSN

5961-01-392-7718

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MDDE08-1-MZ

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961013927718

NSN

5961-01-392-7718

MFG

WECO ELECTRICAL CONNECTORS INC

Description

III END ITEM IDENTIFICATION: CF18 STORES MANAGEMENT TEST STATIION
MAJOR COMPONENTS: MOUNTING RAIL 1,DIODES 8
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL

6705W10P001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927848

NSN

5961-01-392-7848

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6705W10P001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013927848

NSN

5961-01-392-7848

MFG

AMETEK INC. D IV AEROSPACE & DEFENSE

2692404-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013928225

NSN

5961-01-392-8225

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2692404-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013928225

NSN

5961-01-392-8225

MFG

RAYTHEON COMPANY

12000039

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013928935

NSN

5961-01-392-8935

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12000039

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013928935

NSN

5961-01-392-8935

MFG

L-3 COMMUNICATIONS KLEIN ASSOCIATES INC.

351-9722-011

TRANSISTOR

NSN, MFG P/N

5961013929045

NSN

5961-01-392-9045

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351-9722-011

TRANSISTOR

NSN, MFG P/N

5961013929045

NSN

5961-01-392-9045

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL WIRE AND METALIZED DIE AND WIRE BOND GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 1.340 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 109.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 4 RIBBON
TEST DATA DOCUMENT: 13499-352-1550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN