My Quote Request
5961-01-393-2042
20 Products
SMBJ4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932042
NSN
5961-01-393-2042
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
66049H
TRANSISTOR
NSN, MFG P/N
5961013929045
NSN
5961-01-392-9045
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL WIRE AND METALIZED DIE AND WIRE BOND GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 1.340 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 109.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 4 RIBBON
TEST DATA DOCUMENT: 13499-352-1550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
XRF4151
TRANSISTOR
NSN, MFG P/N
5961013929045
NSN
5961-01-392-9045
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: INTERNAL WIRE AND METALIZED DIE AND WIRE BOND GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.160 INCHES MAXIMUM
OVERALL LENGTH: 1.340 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 109.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 4 RIBBON
TEST DATA DOCUMENT: 13499-352-1550 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
352-1551-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929046
NSN
5961-01-392-9046
352-1551-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929046
NSN
5961-01-392-9046
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
P6KE36A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929632
NSN
5961-01-392-9632
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
JAN1N5531B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929992
NSN
5961-01-392-9992
JAN1N5531B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929992
NSN
5961-01-392-9992
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 35.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5531B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JAN1N5540B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929994
NSN
5961-01-392-9994
JAN1N5540B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013929994
NSN
5961-01-392-9994
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5540B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 2.120 INCHES MINIMUM AND 2.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
676-4912-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013930363
NSN
5961-01-393-0363
676-4912-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013930363
NSN
5961-01-393-0363
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
G391228S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013931431
NSN
5961-01-393-1431
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SPD228
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013931431
NSN
5961-01-393-1431
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G391231S1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013931432
NSN
5961-01-393-1432
G391231S1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013931432
NSN
5961-01-393-1432
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
BAR43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013931638
NSN
5961-01-393-1638
MFG
STMICROELECTRONICS INC
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
SS-35618
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013931638
NSN
5961-01-393-1638
MFG
THALES SOLUTIONS AUSTRALIA PTY LTD
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
G391227S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932021
NSN
5961-01-393-2021
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G391226S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932022
NSN
5961-01-393-2022
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G391230S1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013932023
NSN
5961-01-393-2023
G391230S1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013932023
NSN
5961-01-393-2023
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SDA267LUF
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013932023
NSN
5961-01-393-2023
SDA267LUF
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013932023
NSN
5961-01-393-2023
MFG
SOLID STATE DEVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
G390286S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932030
NSN
5961-01-393-2030
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G391229S1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932032
NSN
5961-01-393-2032
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SDR229
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013932032
NSN
5961-01-393-2032
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE