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5961-01-394-4899
20 Products
TX6503-84
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013944899
NSN
5961-01-394-4899
TX6503-84
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013944899
NSN
5961-01-394-4899
MFG
SKYWORKS SOLUTIONS INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES MAXIMUM
OVERALL LENGTH: 0.460 INCHES NOMINAL
OVERALL WIDTH: 0.460 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE CONFIGURATION//THE CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
353-3789-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944900
NSN
5961-01-394-4900
353-3789-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944900
NSN
5961-01-394-4900
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4P252-43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944900
NSN
5961-01-394-4900
MA4P252-43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944900
NSN
5961-01-394-4900
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-3790-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944901
NSN
5961-01-394-4901
353-3790-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944901
NSN
5961-01-394-4901
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
995-1004-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944908
NSN
5961-01-394-4908
995-1004-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013944908
NSN
5961-01-394-4908
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A532A209-101
TRANSISTOR
NSN, MFG P/N
5961013945153
NSN
5961-01-394-5153
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
A532A226-101
TRANSISTOR
NSN, MFG P/N
5961013945154
NSN
5961-01-394-5154
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
A532A016-101
TRANSISTOR
NSN, MFG P/N
5961013945160
NSN
5961-01-394-5160
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
048961-0004
TRANSISTOR
NSN, MFG P/N
5961013945756
NSN
5961-01-394-5756
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: VHF OMNIRANGE, DISTANCE MEASURING EQUIPMENT (VOR DME)
Related Searches:
BUV60
TRANSISTOR
NSN, MFG P/N
5961013945756
NSN
5961-01-394-5756
MFG
SGS-THOMSON MICROELECTRONICS INC
Description
III END ITEM IDENTIFICATION: VHF OMNIRANGE, DISTANCE MEASURING EQUIPMENT (VOR DME)
Related Searches:
446055-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013945786
NSN
5961-01-394-5786
446055-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013945786
NSN
5961-01-394-5786
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: VHF OMNIRANGE,DISTANCE MEASURING EQUIPMENT (VOR DME)
Related Searches:
DMF3070-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013945786
NSN
5961-01-394-5786
DMF3070-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013945786
NSN
5961-01-394-5786
MFG
ALPHA INDUSTRIES INC SEMICONDUCTOR DIV
Description
III END ITEM IDENTIFICATION: VHF OMNIRANGE,DISTANCE MEASURING EQUIPMENT (VOR DME)
Related Searches:
632212-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946349
NSN
5961-01-394-6349
MFG
BAE SYSTEMS CONTROLS INC
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.118 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S22-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946349
NSN
5961-01-394-6349
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.118 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SEN-R-375-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946349
NSN
5961-01-394-6349
SEN-R-375-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946349
NSN
5961-01-394-6349
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.118 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UTG4122
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946349
NSN
5961-01-394-6349
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.118 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
294-990114-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946440
NSN
5961-01-394-6440
294-990114-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946440
NSN
5961-01-394-6440
MFG
CMC ELECTRONICS INC
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
647462-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946440
NSN
5961-01-394-6440
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
837195
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946440
NSN
5961-01-394-6440
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MMBZ5235B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013946440
NSN
5961-01-394-6440
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0