My Quote Request
5961-01-407-6821
20 Products
1503203011
TRANSISTOR
NSN, MFG P/N
5961014076821
NSN
5961-01-407-6821
MFG
GRAPHTEC AMERICA INC.
Description
TRANSISTOR
Related Searches:
391-0353-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075858
NSN
5961-01-407-5858
391-0353-013
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075858
NSN
5961-01-407-5858
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0353-071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075859
NSN
5961-01-407-5859
391-0353-071
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075859
NSN
5961-01-407-5859
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0353-181
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075860
NSN
5961-01-407-5860
391-0353-181
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075860
NSN
5961-01-407-5860
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0353-190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075861
NSN
5961-01-407-5861
391-0353-190
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075861
NSN
5961-01-407-5861
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0353-172
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075862
NSN
5961-01-407-5862
391-0353-172
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075862
NSN
5961-01-407-5862
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
391-0353-192
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075865
NSN
5961-01-407-5865
391-0353-192
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075865
NSN
5961-01-407-5865
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CDLL5711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075868
NSN
5961-01-407-5868
MFG
COMPENSATED DEVICES INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.05 GRAMS
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.065 INCHES NOMINAL
OVERALL LENGTH: 0.138 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SET040211
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014075878
NSN
5961-01-407-5878
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
OVERALL LENGTH: 0.960 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.450 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MCD44-16IO8B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014076427
NSN
5961-01-407-6427
MCD44-16IO8B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014076427
NSN
5961-01-407-6427
MFG
IXYS CORPORATION
Description
COMPONENT NAME AND QUANTITY: 1 SEMICONDUCTOR DEVICE THYRISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-240AA
Related Searches:
S6055W
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014076429
NSN
5961-01-407-6429
S6055W
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014076429
NSN
5961-01-407-6429
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
239490-1
TRANSISTOR
NSN, MFG P/N
5961014076688
NSN
5961-01-407-6688
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.785 INCHES MAXIMUM
OVERALL HEIGHT: 0.805 INCHES MAXIMUM
OVERALL LENGTH: 1.527 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
OVERALL WIDTH: 0.984 INCHES MINIMUM AND 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.038 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL LENGTH: 0.445 INCHES MINIMUM AND 0.475 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRHM7450
TRANSISTOR
NSN, MFG P/N
5961014076688
NSN
5961-01-407-6688
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 11.00 AMPERES MAXIMUM DETECTOR SIGNAL CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.785 INCHES MAXIMUM
OVERALL HEIGHT: 0.805 INCHES MAXIMUM
OVERALL LENGTH: 1.527 INCHES MINIMUM AND 1.544 INCHES MAXIMUM
OVERALL WIDTH: 0.984 INCHES MINIMUM AND 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.038 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL LENGTH: 0.445 INCHES MINIMUM AND 0.475 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
146467-87
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076809
NSN
5961-01-407-6809
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.95 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 2.70 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N988B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 813419-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N988B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076809
NSN
5961-01-407-6809
JANTX1N988B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076809
NSN
5961-01-407-6809
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.95 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 2.70 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N988B-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.900 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 813419-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
S4003-2351
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014076812
NSN
5961-01-407-6812
S4003-2351
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014076812
NSN
5961-01-407-6812
MFG
HIGH VOLTAGE ENGINEERING CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
S4003-2484
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014076813
NSN
5961-01-407-6813
S4003-2484
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014076813
NSN
5961-01-407-6813
MFG
HIGH VOLTAGE ENGINEERING CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
420-990
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076816
NSN
5961-01-407-6816
MFG
PARAMETER GENERATION AND CONTROL INCORPORATED DBA PGC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
S4008-1713
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076818
NSN
5961-01-407-6818
S4008-1713
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014076818
NSN
5961-01-407-6818
MFG
HIGH VOLTAGE ENGINEERING CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1503200027
TRANSISTOR
NSN, MFG P/N
5961014076820
NSN
5961-01-407-6820
MFG
GRAPHTEC AMERICA INC.
Description
TRANSISTOR