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5961-01-408-9007
20 Products
CS93-1161-400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089007
NSN
5961-01-408-9007
CS93-1161-400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089007
NSN
5961-01-408-9007
MFG
BAE SYSTEMS OPERATIONS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BD136
TRANSISTOR
NSN, MFG P/N
5961014087655
NSN
5961-01-408-7655
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-363-6212
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.68 MILLIMETERS MAXIMUM
OVERALL LENGTH: 11.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 7.74 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 12.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 15.36 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
011-0007
TRANSISTOR
NSN, MFG P/N
5961014087657
NSN
5961-01-408-7657
MFG
ANDEEN-HAGERLING INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-363-6212//6625-01-327-1163
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
230003
TRANSISTOR
NSN, MFG P/N
5961014087657
NSN
5961-01-408-7657
MFG
WAVETEK RF PRODUCTS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-363-6212//6625-01-327-1163
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
U1899
TRANSISTOR
NSN, MFG P/N
5961014087657
NSN
5961-01-408-7657
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-363-6212//6625-01-327-1163
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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8027520-4-16
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014087693
NSN
5961-01-408-7693
8027520-4-16
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014087693
NSN
5961-01-408-7693
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
MAJOR COMPONENTS: DIODES 5
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JTX1N4971
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088232
NSN
5961-01-408-8232
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N4971
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N5644A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088233
NSN
5961-01-408-8233
JTX1N5644A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088233
NSN
5961-01-408-8233
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N5644A
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N4471
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088234
NSN
5961-01-408-8234
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N4471
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N5816
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088235
NSN
5961-01-408-8235
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N5816
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N5551
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088236
NSN
5961-01-408-8236
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N5551
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N750A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088237
NSN
5961-01-408-8237
JTX1N750A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088237
NSN
5961-01-408-8237
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N750A-1
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N647-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088238
NSN
5961-01-408-8238
JTX1N647-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088238
NSN
5961-01-408-8238
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N647-1
SPEC/STD CONTROLLING DATA:
Related Searches:
JTX1N965B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088240
NSN
5961-01-408-8240
JTX1N965B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088240
NSN
5961-01-408-8240
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: SEAHAWK HELICOPTER, S70B-2
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX1N965B-1
SPEC/STD CONTROLLING DATA:
Related Searches:
DMC5504-91
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088268
NSN
5961-01-408-8268
DMC5504-91
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088268
NSN
5961-01-408-8268
MFG
SKYWORKS SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: NRAX 7A.C.D AND NRAS11B, ALPHA INDUSTRIES INC
Related Searches:
232268-1
TRANSISTOR
NSN, MFG P/N
5961014088637
NSN
5961-01-408-8637
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.495 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94987-232268 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
HRT-00510TX
TRANSISTOR
NSN, MFG P/N
5961014088637
NSN
5961-01-408-8637
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.495 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 94987-232268 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
CDLL4730A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088975
NSN
5961-01-408-8975
MFG
COMPENSATED DEVICES INC
Description
III END ITEM IDENTIFICATION: AN/FPS-108ACD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: COMPRESSION AND PRESS FIT
OVERALL LENGTH: 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
G404711-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014088975
NSN
5961-01-408-8975
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN/FPS-108ACD
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: COMPRESSION AND PRESS FIT
OVERALL LENGTH: 0.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
9301-5602-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089007
NSN
5961-01-408-9007
9301-5602-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014089007
NSN
5961-01-408-9007
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE