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5961-01-411-0262
20 Products
CS91-1374-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110262
NSN
5961-01-411-0262
CS91-1374-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110262
NSN
5961-01-411-0262
MFG
BAE SYSTEMS OPERATIONS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9102-2400-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
9102-2400-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CS91-1411-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
CS91-1411-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
MFG
BAE SYSTEMS OPERATIONS LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N4370AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
JANTX1N4370AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110265
NSN
5961-01-411-0265
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9333-00029
TRANSISTOR
NSN, MFG P/N
5961014110266
NSN
5961-01-411-0266
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
Related Searches:
CS91-1140-400
TRANSISTOR
NSN, MFG P/N
5961014110266
NSN
5961-01-411-0266
MFG
BAE SYSTEMS OPERATIONS LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.215 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
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2037AS362-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
2037AS362-01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-2037AS362 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
91843145
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
91843145
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
MFG
THALES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-2037AS362 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
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HSMS-2805-BLKG
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
HSMS-2805-BLKG
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-2037AS362 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
HSMS-2805T
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
HSMS-2805T
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014110312
NSN
5961-01-411-0312
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-2037AS362 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
B512F-2T
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014110609
NSN
5961-01-411-0609
MFG
CRYDOM CORP
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 240.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
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873516
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014111145
NSN
5961-01-411-1145
873516
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014111145
NSN
5961-01-411-1145
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
TND905
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014111145
NSN
5961-01-411-1145
TND905
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014111145
NSN
5961-01-411-1145
MFG
ALLEGRO MICROSYSTEMS INC
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
4821-004-587
TRANSISTOR
NSN, MFG P/N
5961014111201
NSN
5961-01-411-1201
MFG
DATAPRODUCTS CORP IMAGING SUPPLIES DIV
Description
TRANSISTOR
Related Searches:
CR101-26A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014111449
NSN
5961-01-411-1449
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
92PI51A
TRANSISTOR
NSN, MFG P/N
5961014111811
NSN
5961-01-411-1811
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
T507084054AB
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014111833
NSN
5961-01-411-1833
T507084054AB
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014111833
NSN
5961-01-411-1833
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SPECIAL FEATURES: NICKEL PLATED FINISH
Related Searches:
HRT41470
TRANSISTOR
NSN, MFG P/N
5961014111862
NSN
5961-01-411-1862
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
V240RA16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014111869
NSN
5961-01-411-1869
MFG
HARRIS CORP DBA GOVERNMENT COMMUNICATION SYSTEMS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143197-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014111961
NSN
5961-01-411-1961
143197-0002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014111961
NSN
5961-01-411-1961
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: DETECTOR PROC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.9 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS