My Quote Request
5961-01-413-3608
20 Products
FBP-00-052
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133608
NSN
5961-01-413-3608
FBP-00-052
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133608
NSN
5961-01-413-3608
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
Related Searches:
720719-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133878
NSN
5961-01-413-3878
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-720719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
RZ307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133878
NSN
5961-01-413-3878
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-720719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SDR719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133878
NSN
5961-01-413-3878
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-720719 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
723097-23
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
723097-23
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.75 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 05869-723097-23 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 30.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
SAC7003H
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
SAC7003H
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.75 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 05869-723097-23 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 30.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
SES498
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
SES498
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133879
NSN
5961-01-413-3879
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.505 INCHES MAXIMUM
OVERALL LENGTH: 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.559 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.75 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 05869-723097-23 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 30.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
720720-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133880
NSN
5961-01-413-3880
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-720720 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 760.0 MINIMUM BREAKDOWN VOLTAGE, DC
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DZ910108B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133880
NSN
5961-01-413-3880
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 05869-720720 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 760.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
111041
TRANSISTOR
NSN, MFG P/N
5961014133882
NSN
5961-01-413-3882
MFG
MELTRONIX INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM SOURCE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.832 INCHES NOMINAL
OVERALL WIDTH: 1.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 416.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 12 PIN AND 1 CASE
TEST DATA DOCUMENT: 05869-723079-7 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
723079-7
TRANSISTOR
NSN, MFG P/N
5961014133882
NSN
5961-01-413-3882
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM SOURCE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.832 INCHES NOMINAL
OVERALL WIDTH: 1.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 416.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 12 PIN AND 1 CASE
TEST DATA DOCUMENT: 05869-723079-7 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SNF1059
TRANSISTOR
NSN, MFG P/N
5961014133882
NSN
5961-01-413-3882
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT AND 10.00 AMPERES MAXIMUM SOURCE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.832 INCHES NOMINAL
OVERALL WIDTH: 1.200 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 416.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 12 PIN AND 1 CASE
TEST DATA DOCUMENT: 05869-723079-7 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 1000.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
28069-001-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
28069-001-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DT880401A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N4083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
JANTX1N4083
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014133885
NSN
5961-01-413-3885
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G204968-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014134336
NSN
5961-01-413-4336
G204968-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014134336
NSN
5961-01-413-4336
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CAPACITANCE RATING IN PICOFARADS: 95.0 MAXIMUM ALL SEMICONDUCTOR
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 90.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: BIDIRECTIONAL
INCLOSURE MATERIAL: METAL OR GLASS
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: G204968-1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.255 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: VARISTOR DIODE ASSY
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G204968 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.15 MAXIMUM FORWARD VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MC510394
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014134336
NSN
5961-01-413-4336
MC510394
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014134336
NSN
5961-01-413-4336
MFG
MICROSEMI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 95.0 MAXIMUM ALL SEMICONDUCTOR
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT AND 90.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: BIDIRECTIONAL
INCLOSURE MATERIAL: METAL OR GLASS
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: G204968-1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.255 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: VARISTOR DIODE ASSY
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-G204968 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.15 MAXIMUM FORWARD VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
JANTX1N4128-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014134345
NSN
5961-01-413-4345
JANTX1N4128-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014134345
NSN
5961-01-413-4345
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 6.40 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4128-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
2738741-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014134357
NSN
5961-01-413-4357
2738741-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014134357
NSN
5961-01-413-4357
MFG
CRSI INC DELAWARE DIV GENERAL DYNAMICS SATCOM TECHNOLOGIES INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 MAXIMUM
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE MATERIAL: METAL OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.155 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25000.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19564-2738741 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DC