My Quote Request
5961-01-418-5647
20 Products
GC41341-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014185647
NSN
5961-01-418-5647
GC41341-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014185647
NSN
5961-01-418-5647
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 0.5 MAXIMUM
III END ITEM IDENTIFICATION: AN/UPM-155 TE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.460 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
8734374
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014185795
NSN
5961-01-418-5795
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
III END ITEM IDENTIFICATION: 6130012416852
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.090 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
CS241210
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014185795
NSN
5961-01-418-5795
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: 6130012416852
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.090 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
ED5171M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961014185812
NSN
5961-01-418-5812
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: USED ON SATCOM SYSTEM
Related Searches:
8734397
TRANSISTOR
NSN, MFG P/N
5961014185862
NSN
5961-01-418-5862
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
III END ITEM IDENTIFICATION: 6130012416852
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 3.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
KS221K10
TRANSISTOR
NSN, MFG P/N
5961014185862
NSN
5961-01-418-5862
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: 6130012416852
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 3.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5906198-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
5906198-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 355.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 53711-5906198 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM PEAK GATE VOLTAGE AND 420.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL AND 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL
~1: NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
68-7096
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
68-7096
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 355.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 53711-5906198 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM PEAK GATE VOLTAGE AND 420.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL AND 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL
~1: NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C137MR243
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
C137MR243
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 355.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 53711-5906198 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM PEAK GATE VOLTAGE AND 420.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL AND 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL
~1: NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
JANTX2N1805
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
JANTX2N1805
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186113
NSN
5961-01-418-6113
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 355.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT AND 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.563 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 53711-5906198 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -5.0 MAXIMUM PEAK GATE VOLTAGE AND 420.0 NOMINAL OFF-STATE VOLTAGE, RMS TOTAL AND 600.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL
~1: NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
915489
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014186168
NSN
5961-01-418-6168
915489
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014186168
NSN
5961-01-418-6168
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80249-915489 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.080 INCHES MINIMUM AND 1.160 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.380 INCHES MAXIMUM
OVERALL WIDTH: 1.108 INCHES MINIMUM AND 1.160 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 80249-915489 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB
Related Searches:
SA11392
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014186168
NSN
5961-01-418-6168
SA11392
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014186168
NSN
5961-01-418-6168
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80249-915489 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 1.080 INCHES MINIMUM AND 1.160 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.380 INCHES MAXIMUM
OVERALL WIDTH: 1.108 INCHES MINIMUM AND 1.160 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 80249-915489 MANUFACTURERS SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 TAB
Related Searches:
8734779
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014186800
NSN
5961-01-418-6800
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
III END ITEM IDENTIFICATION: 6130-01-241-6852
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.607 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MBR10100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014186800
NSN
5961-01-418-6800
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 6130-01-241-6852
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.607 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N6399
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186803
NSN
5961-01-418-6803
2N6399
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186803
NSN
5961-01-418-6803
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 6130-01-241-6852
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
8734635
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186803
NSN
5961-01-418-6803
8734635
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014186803
NSN
5961-01-418-6803
MFG
SACRAMENTO AIR LOGISTICS CENTER SM-ALC/LIIL
Description
III END ITEM IDENTIFICATION: 6130-01-241-6852
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
J94-220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187305
NSN
5961-01-418-7305
MFG
WARD LEONARD ELECTRIC CO INC
Description
III END ITEM IDENTIFICATION: INTEGRATED BASE TURBINE GENERATOR INTERIM SPARES
Related Searches:
J940220
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187307
NSN
5961-01-418-7307
MFG
WARD LEONARD ELECTRIC CO INC
Description
III END ITEM IDENTIFICATION: INTEGRATED BASE TURBINE GENERATOR INTERIM SPARES
Related Searches:
840B777-F01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014187344
NSN
5961-01-418-7344
840B777-F01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014187344
NSN
5961-01-418-7344
MFG
WARD LEONARD ELECTRIC CO INC
Description
III END ITEM IDENTIFICATION: INTEGRATED BASE TURBINE GENERATOR INTERIM SPARES
Related Searches:
9-1842-11-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187347
NSN
5961-01-418-7347
9-1842-11-100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187347
NSN
5961-01-418-7347
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: INTEGRATED BASE TURBINE GENERATOR INTERIM SPARES