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5961-01-429-7655

20 Products

SD1853-H2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297655

NSN

5961-01-429-7655

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SD1853-H2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297655

NSN

5961-01-429-7655

MFG

STMICROELECTRONICS INC

1N1184AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293084

NSN

5961-01-429-3084

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1N1184AR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293084

NSN

5961-01-429-3084

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

984.30252.00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293084

NSN

5961-01-429-3084

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984.30252.00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293084

NSN

5961-01-429-3084

MFG

ALFA LAVAL INC .

1N1184A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293090

NSN

5961-01-429-3090

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1N1184A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293090

NSN

5961-01-429-3090

MFG

MICROSEMI CORP-COLORADO

CR91-01A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293090

NSN

5961-01-429-3090

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CR91-01A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293090

NSN

5961-01-429-3090

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

34096969-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293377

NSN

5961-01-429-3377

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34096969-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014293377

NSN

5961-01-429-3377

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - CLEARWATER DEFENSE

Description

III END ITEM IDENTIFICATION: PACER DAWN
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: JANTX LEVEL SCREENING

80927-1

TRANSISTOR

NSN, MFG P/N

5961014293419

NSN

5961-01-429-3419

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80927-1

TRANSISTOR

NSN, MFG P/N

5961014293419

NSN

5961-01-429-3419

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.235 INCHES MAXIMUM
OVERALL LENGTH: 0.545 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

7548644P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014296309

NSN

5961-01-429-6309

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7548644P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014296309

NSN

5961-01-429-6309

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL REGULATOR VOLTAGE, DC AND 8.6 MAXIMUM REVERSE VOLTAGE, PEAK
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

UZ2453

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014296309

NSN

5961-01-429-6309

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UZ2453

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014296309

NSN

5961-01-429-6309

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 250.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL REGULATOR VOLTAGE, DC AND 8.6 MAXIMUM REVERSE VOLTAGE, PEAK
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

1A21032H04

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297613

NSN

5961-01-429-7613

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1A21032H04

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297613

NSN

5961-01-429-7613

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

MA4P607-280 SEL

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297613

NSN

5961-01-429-7613

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MA4P607-280 SEL

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297613

NSN

5961-01-429-7613

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

588R557H02

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

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588R557H02

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

SFF557-2 1

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

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SFF557-2 1

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

MFG

SOLID STATE DEVICES INC.

SNF1110-1

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

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SNF1110-1

TRANSISTOR

NSN, MFG P/N

5961014297618

NSN

5961-01-429-7618

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

1A21003H01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

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1A21003H01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

GC15009-17

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

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GC15009-17

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

MFG

CONTAINAIR SYSTEMS CORP CUBIC CALCULATOR DIV

GC15330-17

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

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GC15330-17

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297629

NSN

5961-01-429-7629

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

588R556H01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297642

NSN

5961-01-429-7642

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588R556H01

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297642

NSN

5961-01-429-7642

MFG

SOLID STATE DEVICES INC.

ST-4562

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297642

NSN

5961-01-429-7642

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ST-4562

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297642

NSN

5961-01-429-7642

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

1A20023H02

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297655

NSN

5961-01-429-7655

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1A20023H02

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014297655

NSN

5961-01-429-7655

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS