My Quote Request
5961-01-439-4773
20 Products
DN306W-4150CC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014394773
NSN
5961-01-439-4773
DN306W-4150CC
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014394773
NSN
5961-01-439-4773
MFG
MICROSEMI CORP RPM MICRO DIV
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
GC41693-M3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393315
NSN
5961-01-439-3315
GC41693-M3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393315
NSN
5961-01-439-3315
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
Related Searches:
MA4P1017-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393315
NSN
5961-01-439-3315
MA4P1017-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393315
NSN
5961-01-439-3315
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
Related Searches:
A3148269-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393317
NSN
5961-01-439-3317
A3148269-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393317
NSN
5961-01-439-3317
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
Related Searches:
MA4P1017-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393317
NSN
5961-01-439-3317
MA4P1017-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393317
NSN
5961-01-439-3317
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
Related Searches:
CLA3131-01-325-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393977
NSN
5961-01-439-3977
CLA3131-01-325-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014393977
NSN
5961-01-439-3977
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 NOMINAL
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
8014
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014394338
NSN
5961-01-439-4338
MFG
BALLARD COMMERCIAL INDUSTRIES INC. DBA B C I
Description
III END ITEM IDENTIFICATION: E/I FSCM 03950
Related Searches:
6593C125H18
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394341
NSN
5961-01-439-4341
6593C125H18
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394341
NSN
5961-01-439-4341
MFG
EATON CORPORATION
Description
III END ITEM IDENTIFICATION: CIRCUIT BREAKER E/I FSCM 89946
Related Searches:
144-849
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394344
NSN
5961-01-439-4344
144-849
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394344
NSN
5961-01-439-4344
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: WELDING MACHINE E/I FSCM 40608
Related Searches:
144-690
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394347
NSN
5961-01-439-4347
144-690
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394347
NSN
5961-01-439-4347
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: WEILDING MACHINE E/I FSCM 40608
Related Searches:
1858-0140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014394434
NSN
5961-01-439-4434
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 NPN; AMBIENT TEMP +25C; CASE PLASTIC
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE
Related Searches:
CA3246E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014394434
NSN
5961-01-439-4434
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 14
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.280 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 NPN; AMBIENT TEMP +25C; CASE PLASTIC
TERMINAL LENGTH: 0.120 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE
Related Searches:
701-152-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014394436
NSN
5961-01-439-4436
701-152-001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014394436
NSN
5961-01-439-4436
MFG
NELSON STUD WELDING INC
Description
III END ITEM IDENTIFICATION: WEILDING MACHINE E/I FSCM 85195
Related Searches:
701-152-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014394442
NSN
5961-01-439-4442
701-152-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014394442
NSN
5961-01-439-4442
MFG
NELSON STUD WELDING INC
Description
III END ITEM IDENTIFICATION: WELDING MACHINE E/I FSCM 85105
Related Searches:
9337-987-60682
TRANSISTOR
NSN, MFG P/N
5961014394650
NSN
5961-01-439-4650
MFG
THALES OPTRONIQUE SA
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 15.8 MILLIMETERS NOMINAL
OVERALL WIDTH: 10.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRF620
TRANSISTOR
NSN, MFG P/N
5961014394650
NSN
5961-01-439-4650
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 15.8 MILLIMETERS NOMINAL
OVERALL WIDTH: 10.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
HXTR5101
TRANSISTOR
NSN, MFG P/N
5961014394663
NSN
5961-01-439-4663
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MINIMUM AND 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 700.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, PEAK
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
SV808927
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
SV808927
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
III END ITEM IDENTIFICATION: 0XYGEN GEN PL E/I FSCM 81412
Related Searches:
SV808927-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
SV808927-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: 0XYGEN GEN PL E/I FSCM 81412
Related Searches:
T6201430
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
T6201430
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014394731
NSN
5961-01-439-4731
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: 0XYGEN GEN PL E/I FSCM 81412