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5961-01-440-3224

20 Products

552-2646-0

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403224

NSN

5961-01-440-3224

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552-2646-0

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403224

NSN

5961-01-440-3224

MFG

ROI DEVELOPMENT CORP DBA NEWMAR

TT14216K0F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014395047

NSN

5961-01-439-5047

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TT14216K0F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014395047

NSN

5961-01-439-5047

MFG

INFINEON TECHNOLOGIES INDUSTRIAL POWER INC.

Description

MOUNTING METHOD: BASE AND TERMINAL

101614210

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014395989

NSN

5961-01-439-5989

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101614210

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014395989

NSN

5961-01-439-5989

MFG

EATON CORPORATION

JANTXV2N4150S

TRANSISTOR

NSN, MFG P/N

5961014396798

NSN

5961-01-439-6798

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JANTXV2N4150S

TRANSISTOR

NSN, MFG P/N

5961014396798

NSN

5961-01-439-6798

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N4150S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-394
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/394 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

D45C11

TRANSISTOR

NSN, MFG P/N

5961014397003

NSN

5961-01-439-7003

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D45C11

TRANSISTOR

NSN, MFG P/N

5961014397003

NSN

5961-01-439-7003

MFG

REABLE THERAPEUTICS INC DBA CHATTANOOGA GROUP

Description

DESIGN CONTROL REFERENCE: D45C11
MANUFACTURERS CODE: 90074
SPECIAL FEATURES: TRANSISTOR:REPAIR PART FOR STIMULATOR, ULTRASONIC,MDL700C
THE MANUFACTURERS DATA:

MTP8P1Q

TRANSISTOR

NSN, MFG P/N

5961014397008

NSN

5961-01-439-7008

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MTP8P1Q

TRANSISTOR

NSN, MFG P/N

5961014397008

NSN

5961-01-439-7008

MFG

REABLE THERAPEUTICS INC DBA CHATTANOOGA GROUP

Description

DESIGN CONTROL REFERENCE: MTP8P1Q
MANUFACTURERS CODE: 90074
SPECIAL FEATURES: TRANSISTIO; FET, REPAIR PART FOR SIMULATOR,ULTRASONIC,700C
THE MANUFACTURERS DATA:

A3167910-1

TRANSISTOR

NSN, MFG P/N

5961014399702

NSN

5961-01-439-9702

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A3167910-1

TRANSISTOR

NSN, MFG P/N

5961014399702

NSN

5961-01-439-9702

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-A3167910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

RF2324

TRANSISTOR

NSN, MFG P/N

5961014399702

NSN

5961-01-439-9702

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RF2324

TRANSISTOR

NSN, MFG P/N

5961014399702

NSN

5961-01-439-9702

MFG

M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION

Description

CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-A3167910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

622-3717

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014400174

NSN

5961-01-440-0174

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622-3717

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014400174

NSN

5961-01-440-0174

MFG

JOHN BEAN TECHNOLOGIES CORPORATION DBA JBT AEROTECH-MILITARY PROGRAMS DIV JBT AEROTECH

Description

III END ITEM IDENTIFICATION: USED ON TRUMP SMD-1200 TRUCK MTD AIRCRAFT DEICER/WASHER

G-1175

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014401169

NSN

5961-01-440-1169

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G-1175

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014401169

NSN

5961-01-440-1169

MFG

HENSCHEL INC. DBA L-3 HENSCHEL

Description

III END ITEM IDENTIFICATION: ELECTRICAL E/I DSCM 81349
SPECIAL FEATURES: DIODE, ESDS(IN4002)

SA4684

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014401172

NSN

5961-01-440-1172

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SA4684

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014401172

NSN

5961-01-440-1172

MFG

SEMTECH CORPORATION

Description

III END ITEM IDENTIFICATION: B1-BACFT E/I FSCM 14099
SPECIAL FEATURES: MATERIAL: SILICON; 2 UNINSULATED WIRE LEADS

3798958

TRANSISTOR

NSN, MFG P/N

5961014401173

NSN

5961-01-440-1173

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3798958

TRANSISTOR

NSN, MFG P/N

5961014401173

NSN

5961-01-440-1173

MFG

HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD

Description

III END ITEM IDENTIFICATION: PROCESSOR CHA E/I FSCM 59364
SPECIAL FEATURES: FET; QUAD, MOS N-CHANNEL; SILICON

IRF640

TRANSISTOR

NSN, MFG P/N

5961014401201

NSN

5961-01-440-1201

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IRF640

TRANSISTOR

NSN, MFG P/N

5961014401201

NSN

5961-01-440-1201

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III END ITEM IDENTIFICATION: 226320200-100 E/I FSCM 04713
SPECIAL FEATURES: POWER FET N-CHANNEL ENHANCEMENT MODE; SILICON GATE TMOS

1811251

TRANSISTOR

NSN, MFG P/N

5961014402369

NSN

5961-01-440-2369

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1811251

TRANSISTOR

NSN, MFG P/N

5961014402369

NSN

5961-01-440-2369

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

III END ITEM IDENTIFICATION: JUNCTION BOX E/I FSCM 03956
SPECIAL FEATURES: NPN 300V 1 WATT

ST3407

TRANSISTOR

NSN, MFG P/N

5961014402369

NSN

5961-01-440-2369

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ST3407

TRANSISTOR

NSN, MFG P/N

5961014402369

NSN

5961-01-440-2369

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

III END ITEM IDENTIFICATION: JUNCTION BOX E/I FSCM 03956
SPECIAL FEATURES: NPN 300V 1 WATT

TA-5AS(MOD)

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403040

NSN

5961-01-440-3040

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TA-5AS(MOD)

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403040

NSN

5961-01-440-3040

MFG

GUARDIAN TECHNOLOGY INC

TA-15AT(MOD)

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403041

NSN

5961-01-440-3041

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TA-15AT(MOD)

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014403041

NSN

5961-01-440-3041

MFG

GUARDIAN TECHNOLOGY INC

C20035-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

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C20035-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY

Description

III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD

DZ880504A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

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DZ880504A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD

S40297

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

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S40297

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014403217

NSN

5961-01-440-3217

MFG

SEMICON COMPONENTS INC

Description

III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD