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5961-01-440-3224
20 Products
552-2646-0
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403224
NSN
5961-01-440-3224
552-2646-0
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403224
NSN
5961-01-440-3224
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
III END ITEM IDENTIFICATION: E/I FSCM 03950
Related Searches:
TT14216K0F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014395047
NSN
5961-01-439-5047
TT14216K0F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014395047
NSN
5961-01-439-5047
MFG
INFINEON TECHNOLOGIES INDUSTRIAL POWER INC.
Description
MOUNTING METHOD: BASE AND TERMINAL
Related Searches:
101614210
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014395989
NSN
5961-01-439-5989
101614210
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014395989
NSN
5961-01-439-5989
MFG
EATON CORPORATION
Description
III END ITEM IDENTIFICATION: UPS COM PTS S80 NAVY 2
Related Searches:
JANTXV2N4150S
TRANSISTOR
NSN, MFG P/N
5961014396798
NSN
5961-01-439-6798
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N4150S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-394
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/394 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
D45C11
TRANSISTOR
NSN, MFG P/N
5961014397003
NSN
5961-01-439-7003
MFG
REABLE THERAPEUTICS INC DBA CHATTANOOGA GROUP
Description
DESIGN CONTROL REFERENCE: D45C11
MANUFACTURERS CODE: 90074
SPECIAL FEATURES: TRANSISTOR:REPAIR PART FOR STIMULATOR, ULTRASONIC,MDL700C
THE MANUFACTURERS DATA:
Related Searches:
MTP8P1Q
TRANSISTOR
NSN, MFG P/N
5961014397008
NSN
5961-01-439-7008
MFG
REABLE THERAPEUTICS INC DBA CHATTANOOGA GROUP
Description
DESIGN CONTROL REFERENCE: MTP8P1Q
MANUFACTURERS CODE: 90074
SPECIAL FEATURES: TRANSISTIO; FET, REPAIR PART FOR SIMULATOR,ULTRASONIC,700C
THE MANUFACTURERS DATA:
Related Searches:
A3167910-1
TRANSISTOR
NSN, MFG P/N
5961014399702
NSN
5961-01-439-9702
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-A3167910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
RF2324
TRANSISTOR
NSN, MFG P/N
5961014399702
NSN
5961-01-439-9702
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 5820012679477 E/I FSCM 80063
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.830 INCHES MAXIMUM
OVERALL WIDTH: 0.252 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
TEST DATA DOCUMENT: 80063-A3167910 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
622-3717
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014400174
NSN
5961-01-440-0174
622-3717
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014400174
NSN
5961-01-440-0174
MFG
JOHN BEAN TECHNOLOGIES CORPORATION DBA JBT AEROTECH-MILITARY PROGRAMS DIV JBT AEROTECH
Description
III END ITEM IDENTIFICATION: USED ON TRUMP SMD-1200 TRUCK MTD AIRCRAFT DEICER/WASHER
Related Searches:
G-1175
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014401169
NSN
5961-01-440-1169
MFG
HENSCHEL INC. DBA L-3 HENSCHEL
Description
III END ITEM IDENTIFICATION: ELECTRICAL E/I DSCM 81349
SPECIAL FEATURES: DIODE, ESDS(IN4002)
Related Searches:
SA4684
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014401172
NSN
5961-01-440-1172
SA4684
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014401172
NSN
5961-01-440-1172
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: B1-BACFT E/I FSCM 14099
SPECIAL FEATURES: MATERIAL: SILICON; 2 UNINSULATED WIRE LEADS
Related Searches:
3798958
TRANSISTOR
NSN, MFG P/N
5961014401173
NSN
5961-01-440-1173
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
III END ITEM IDENTIFICATION: PROCESSOR CHA E/I FSCM 59364
SPECIAL FEATURES: FET; QUAD, MOS N-CHANNEL; SILICON
Related Searches:
IRF640
TRANSISTOR
NSN, MFG P/N
5961014401201
NSN
5961-01-440-1201
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: 226320200-100 E/I FSCM 04713
SPECIAL FEATURES: POWER FET N-CHANNEL ENHANCEMENT MODE; SILICON GATE TMOS
Related Searches:
1811251
TRANSISTOR
NSN, MFG P/N
5961014402369
NSN
5961-01-440-2369
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
III END ITEM IDENTIFICATION: JUNCTION BOX E/I FSCM 03956
SPECIAL FEATURES: NPN 300V 1 WATT
Related Searches:
ST3407
TRANSISTOR
NSN, MFG P/N
5961014402369
NSN
5961-01-440-2369
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
III END ITEM IDENTIFICATION: JUNCTION BOX E/I FSCM 03956
SPECIAL FEATURES: NPN 300V 1 WATT
Related Searches:
TA-5AS(MOD)
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403040
NSN
5961-01-440-3040
TA-5AS(MOD)
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403040
NSN
5961-01-440-3040
MFG
GUARDIAN TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
TA-15AT(MOD)
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403041
NSN
5961-01-440-3041
TA-15AT(MOD)
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014403041
NSN
5961-01-440-3041
MFG
GUARDIAN TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
C20035-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014403217
NSN
5961-01-440-3217
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD
Related Searches:
DZ880504A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014403217
NSN
5961-01-440-3217
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD
Related Searches:
S40297
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014403217
NSN
5961-01-440-3217
MFG
SEMICON COMPONENTS INC
Description
III END ITEM IDENTIFICATION: F16AIRCOMBFIT E/I FSCM 12954
SPECIAL FEATURES: TRANSIENT VOLTAGE SUPPRESSOR; LOW CAPACITANCE; AXIAL LOAD

