My Quote Request
5961-01-443-9089
20 Products
SFF3834-326
TRANSISTOR
NSN, MFG P/N
5961014439089
NSN
5961-01-443-9089
MFG
SOLID STATE DEVICES INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
FSF 2520T
TRANSISTOR
NSN, MFG P/N
5961014439089
NSN
5961-01-443-9089
MFG
SERTECH LABORATORIES INC
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.850 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
381492-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439119
NSN
5961-01-443-9119
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.112 INCHES MAXIMUM
OVERALL WIDTH: 0.067 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MMSZ5234B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439119
NSN
5961-01-443-9119
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.112 INCHES MAXIMUM
OVERALL WIDTH: 0.067 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
99162409
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439185
NSN
5961-01-443-9185
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HSMP-3800-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439185
NSN
5961-01-443-9185
HSMP-3800-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439185
NSN
5961-01-443-9185
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
99162465
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439186
NSN
5961-01-443-9186
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HSMP-3831-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439186
NSN
5961-01-443-9186
HSMP-3831-L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439186
NSN
5961-01-443-9186
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
864143-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439381
NSN
5961-01-443-9381
864143-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439381
NSN
5961-01-443-9381
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
864143-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439381
NSN
5961-01-443-9381
MFG
MICROSEMI CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
380439-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439427
NSN
5961-01-443-9427
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
MMBD701L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439427
NSN
5961-01-443-9427
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
381492-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439465
NSN
5961-01-443-9465
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.112 INCHES MAXIMUM
OVERALL WIDTH: 0.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
MMSZ5231B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439465
NSN
5961-01-443-9465
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.112 INCHES MAXIMUM
OVERALL WIDTH: 0.067 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.9 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
647462-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439508
NSN
5961-01-443-9508
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MMBZ5226B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439508
NSN
5961-01-443-9508
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
PMBZ5226B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014439508
NSN
5961-01-443-9508
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.89 MILLIMETERS MINIMUM AND 1.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.80 MILLIMETERS MINIMUM AND 3.04 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.10 MILLIMETERS MINIMUM AND 2.50 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
195-4605
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
195-4605
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
MFG
RADIOSPARES SAS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 260.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
Related Searches:
D373004K
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
D373004K
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
MFG
THALES AVIONICS ELECTRICAL SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 260.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
Related Searches:
SKKD260/12
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
SKKD260/12
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014439685
NSN
5961-01-443-9685
MFG
SEMIKRON INTL INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 260.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON