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5961-01-445-0429
20 Products
SZ13818H501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014450429
NSN
5961-01-445-0429
SZ13818H501B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014450429
NSN
5961-01-445-0429
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 450.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: F-15I
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.253 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DRAWING ITEM NAME;SEMICONDUCTOR DEVICES,DIODE VOLTAGE REGULATOR
TERMINAL TYPE AND QUANTITY: 1 WIRE LOOP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL NOMINAL REGULATOR VOLTAGE AND 1.5 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
DZ720911J
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014450429
NSN
5961-01-445-0429
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 450.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: F-15I
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.253 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DRAWING ITEM NAME;SEMICONDUCTOR DEVICES,DIODE VOLTAGE REGULATOR
TERMINAL TYPE AND QUANTITY: 1 WIRE LOOP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL NOMINAL REGULATOR VOLTAGE AND 1.5 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
353-5056-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014451057
NSN
5961-01-445-1057
353-5056-010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014451057
NSN
5961-01-445-1057
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 900.00 AMPERES MINIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
FIELD FORCE EFFECT TYPE: MAGNETIC FIELD
FUNCTION FOR WHICH DESIGNED: SWITCHING
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MINIMUM REVERSE VOLTAGE, PEAK
Related Searches:
019-005775-010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014451279
NSN
5961-01-445-1279
019-005775-010
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014451279
NSN
5961-01-445-1279
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
77C956893P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014451384
NSN
5961-01-445-1384
77C956893P1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014451384
NSN
5961-01-445-1384
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 03538
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: TO-254 CASE
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL SEMICONDUCTOR
Related Searches:
OM11N55CSA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014451384
NSN
5961-01-445-1384
OM11N55CSA
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014451384
NSN
5961-01-445-1384
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR
III END ITEM IDENTIFICATION: VARIOUS E/I FSCM 03538
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: TO-254 CASE
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL SEMICONDUCTOR
Related Searches:
20-01387-002
TRANSISTOR
NSN, MFG P/N
5961014452335
NSN
5961-01-445-2335
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-01387-002
SPEC/STD CONTROLLING DATA:
Related Searches:
OM3735ST
TRANSISTOR
NSN, MFG P/N
5961014452335
NSN
5961-01-445-2335
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-01387-002
SPEC/STD CONTROLLING DATA:
Related Searches:
1N3891M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014452423
NSN
5961-01-445-2423
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A606463
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014452454
NSN
5961-01-445-2454
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA TRAVELING WAVE TECHNOLOGY DIVISION DIV MICROWAVE POWER TUBE PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
294262-001
TRANSISTOR
NSN, MFG P/N
5961014454716
NSN
5961-01-445-4716
MFG
CHARLES STARK DRAPER LABORATORY INC THE DBA DRAPER LABORATORY DIV HEADQUARTERS
Description
TRANSISTOR
Related Searches:
IRFM044
TRANSISTOR
NSN, MFG P/N
5961014454716
NSN
5961-01-445-4716
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
744-867441
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014454998
NSN
5961-01-445-4998
744-867441
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014454998
NSN
5961-01-445-4998
MFG
ROSEMOUNT ANALYTICAL INC. DIV LIQUID DIVISION
Description
III END ITEM IDENTIFICATION: ELECTRICAL E/I FSCM 0U1N0
SPECIAL FEATURES: 4 1N459 DIODES
Related Searches:
20-01286-002
TRANSISTOR
NSN, MFG P/N
5961014455704
NSN
5961-01-445-5704
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-01286-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.785 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: THIS DEVICE CONTAINS BERYLLIUM OXIDE, WHICH IS EXTREMELY TOXIC
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
511607-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014455894
NSN
5961-01-445-5894
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-511607 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
SDR607
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014455894
NSN
5961-01-445-5894
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 00752-511607 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
353-1972-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014455919
NSN
5961-01-445-5919
353-1972-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014455919
NSN
5961-01-445-5919
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.440 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10472644
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014456482
NSN
5961-01-445-6482
10472644
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014456482
NSN
5961-01-445-6482
MFG
REMY INC.
Description
III END ITEM IDENTIFICATION: SEALIFT SUPPORT FACILITIES (SSFP) EQUIPMENT
Related Searches:
UM7104B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014456619
NSN
5961-01-445-6619
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON ALLOY
Related Searches:
VN610L
TRANSISTOR
NSN, MFG P/N
5961014456678
NSN
5961-01-445-6678
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR