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5961-01-446-2779
20 Products
BB505B E-7285
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014462779
NSN
5961-01-446-2779
BB505B E-7285
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014462779
NSN
5961-01-446-2779
MFG
SIEMENS CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
99207454
TRANSISTOR
NSN, MFG P/N
5961014457070
NSN
5961-01-445-7070
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.60 AMPERES MAXIMUM DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.380 INCHES NOMINAL
OVERALL LENGTH: 10.420 INCHES NOMINAL
OVERALL WIDTH: 6.730 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
IRFR9220
TRANSISTOR
NSN, MFG P/N
5961014457070
NSN
5961-01-445-7070
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 3.60 AMPERES MAXIMUM DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 2.380 INCHES NOMINAL
OVERALL LENGTH: 10.420 INCHES NOMINAL
OVERALL WIDTH: 6.730 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
13425273
TRANSISTOR
NSN, MFG P/N
5961014457344
NSN
5961-01-445-7344
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -18.00 AMPERES MAXIMUM REGULATOR CURRENT AND -72.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE AND TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
94-5252
TRANSISTOR
NSN, MFG P/N
5961014457344
NSN
5961-01-445-7344
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -18.00 AMPERES MAXIMUM REGULATOR CURRENT AND -72.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE AND TERMINAL
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
DZ931207B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014458747
NSN
5961-01-445-8747
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: F-15I
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MATCHED SET OF 3 DIODES SELECTED FROM JANTX1N5555;VC @ 2.99 A(10X1000 MICRO SEC PULSE)+/- 0.2 VDC
Related Searches:
755-867525
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014458960
NSN
5961-01-445-8960
755-867525
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014458960
NSN
5961-01-445-8960
MFG
ROSEMOUNT ANALYTICAL INC. DIV LIQUID DIVISION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
A3154947-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459113
NSN
5961-01-445-9113
A3154947-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459113
NSN
5961-01-445-9113
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC41434-148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459113
NSN
5961-01-445-9113
GC41434-148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459113
NSN
5961-01-445-9113
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4PH233
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459113
NSN
5961-01-445-9113
MFG
M/A-COM INC. DIV BURLINGTON SEMICONDUCTOR OPERATION
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A3154947-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459144
NSN
5961-01-445-9144
A3154947-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459144
NSN
5961-01-445-9144
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GC41435-148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459144
NSN
5961-01-445-9144
GC41435-148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459144
NSN
5961-01-445-9144
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4PH234
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014459144
NSN
5961-01-445-9144
MFG
M/A-COM INC. DIV BURLINGTON SEMICONDUCTOR OPERATION
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.140 INCHES MAXIMUM
OVERALL WIDTH: 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMDA05C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014460489
NSN
5961-01-446-0489
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: PATRIOT
Related Searches:
40031200000
TRANSISTOR
NSN, MFG P/N
5961014460542
NSN
5961-01-446-0542
MFG
ECLYPSE INTERNATIONAL CORP ORATION
Description
TRANSISTOR
Related Searches:
04004020000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014460544
NSN
5961-01-446-0544
04004020000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014460544
NSN
5961-01-446-0544
MFG
ECLYPSE INTERNATIONAL CORP ORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
502-0006
TRANSISTOR
NSN, MFG P/N
5961014461806
NSN
5961-01-446-1806
MFG
THERMO SHANDON INC DBA SHANDON INC DIV ANATOMICAL PATHOLOGY
Description
DESIGN CONTROL REFERENCE: 502-0006
MANUFACTURERS CODE: 17602
SPECIAL FEATURES: TRIAC; END ITEM APPLICATION 6640-01-446-1459; MICROTOME-CRYOSTAT; MODEL 1500-MC
THE MANUFACTURERS DATA:
Related Searches:
LL-H44-5010
TRANSISTOR
NSN, MFG P/N
5961014461806
NSN
5961-01-446-1806
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
DESIGN CONTROL REFERENCE: 502-0006
MANUFACTURERS CODE: 17602
SPECIAL FEATURES: TRIAC; END ITEM APPLICATION 6640-01-446-1459; MICROTOME-CRYOSTAT; MODEL 1500-MC
THE MANUFACTURERS DATA:
Related Searches:
REPAIR PART
TRANSISTOR
NSN, MFG P/N
5961014461806
NSN
5961-01-446-1806
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
DESIGN CONTROL REFERENCE: 502-0006
MANUFACTURERS CODE: 17602
SPECIAL FEATURES: TRIAC; END ITEM APPLICATION 6640-01-446-1459; MICROTOME-CRYOSTAT; MODEL 1500-MC
THE MANUFACTURERS DATA:
Related Searches:
4803-02-0029
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014462779
NSN
5961-01-446-2779
4803-02-0029
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014462779
NSN
5961-01-446-2779
MFG
WAVETEK RF PRODUCTS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY