My Quote Request
5961-01-453-8816
20 Products
MBRS1100T3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014538816
NSN
5961-01-453-8816
MBRS1100T3
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014538816
NSN
5961-01-453-8816
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: SURFACE
SPECIAL FEATURES: PLASTIC CASE; STABLE OXIDE PASSIVATED JUNCTION
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
91754500
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014538816
NSN
5961-01-453-8816
91754500
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014538816
NSN
5961-01-453-8816
MFG
THALES
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: SURFACE
SPECIAL FEATURES: PLASTIC CASE; STABLE OXIDE PASSIVATED JUNCTION
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
889751
TRANSISTOR
NSN, MFG P/N
5961014538852
NSN
5961-01-453-8852
MFG
NAI TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0350 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.0984 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
99165745
TRANSISTOR
NSN, MFG P/N
5961014538852
NSN
5961-01-453-8852
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0350 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.0984 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
MMBT2907AL
TRANSISTOR
NSN, MFG P/N
5961014538852
NSN
5961-01-453-8852
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0350 INCHES MINIMUM AND 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1102 INCHES MINIMUM AND 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.0830 INCHES MINIMUM AND 0.0984 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
99129941
TRANSISTOR
NSN, MFG P/N
5961014538854
NSN
5961-01-453-8854
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.1039 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TAPE AND REEL PACKAGING OF 3000 UNITS PER REEL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
BFR93ALT1
TRANSISTOR
NSN, MFG P/N
5961014538854
NSN
5961-01-453-8854
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.0440 INCHES MAXIMUM
OVERALL LENGTH: 0.1197 INCHES MAXIMUM
OVERALL WIDTH: 0.1039 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.3 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TAPE AND REEL PACKAGING OF 3000 UNITS PER REEL
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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45LR40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014539210
NSN
5961-01-453-9210
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: USED ON RFA SPARES
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: THREADED HOLE
OVERALL DIAMETER: 1.031 INCHES NOMINAL
OVERALL LENGTH: 4.250 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
381539-1
TRANSISTOR
NSN, MFG P/N
5961014539673
NSN
5961-01-453-9673
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RECIEVER/TRANSMITTER (ARC-222), NEXT HIGHER ASSEMBLY: 724546
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.173 INCHES MINIMUM AND 0.181 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.167 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
TN2510N8
TRANSISTOR
NSN, MFG P/N
5961014539673
NSN
5961-01-453-9673
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.30 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: RECIEVER/TRANSMITTER (ARC-222), NEXT HIGHER ASSEMBLY: 724546
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.055 INCHES MINIMUM AND 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.173 INCHES MINIMUM AND 0.181 INCHES MAXIMUM
OVERALL WIDTH: 0.155 INCHES MINIMUM AND 0.167 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
381538-1
TRANSISTOR
NSN, MFG P/N
5961014539677
NSN
5961-01-453-9677
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: RECEIVER/TRANSMITTER (ARC-222), NEXT HIGHER ASSEMBLY:724545
Related Searches:
TN0104N8
TRANSISTOR
NSN, MFG P/N
5961014539677
NSN
5961-01-453-9677
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: RECEIVER/TRANSMITTER (ARC-222), NEXT HIGHER ASSEMBLY:724545
Related Searches:
803720-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014540070
NSN
5961-01-454-0070
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 803720-2
III END ITEM IDENTIFICATION: COAST GUARD HU-25 AIRCRAFT
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 96214
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.160 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: TAB, SOLDER LUG AND THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 NOMINAL REVERSE GATE TO SOURCE VOLTAGE
Related Searches:
31024-2
TRANSISTOR
NSN, MFG P/N
5961014540465
NSN
5961-01-454-0465
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
III END ITEM IDENTIFICATION: PYLON DECODER UNIT;MODEL PDU90
MANUFACTURERS CODE: 17856
MFR SOURCE CONTROLLING REFERENCE: V13460
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SENSITIVE ELECTRONIC DEVICE
Related Searches:
V13460
TRANSISTOR
NSN, MFG P/N
5961014540465
NSN
5961-01-454-0465
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: PYLON DECODER UNIT;MODEL PDU90
MANUFACTURERS CODE: 17856
MFR SOURCE CONTROLLING REFERENCE: V13460
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SENSITIVE ELECTRONIC DEVICE
Related Searches:
31024-1
TRANSISTOR
NSN, MFG P/N
5961014540466
NSN
5961-01-454-0466
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
III END ITEM IDENTIFICATION: PYLON DECODER UNIT;MODEL PDU90
MANUFACTURERS CODE: 17856
MFR SOURCE CONTROLLING REFERENCE: V13459
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SENSITIVE ELECTRONIC DEVICE
Related Searches:
V13459
TRANSISTOR
NSN, MFG P/N
5961014540466
NSN
5961-01-454-0466
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: PYLON DECODER UNIT;MODEL PDU90
MANUFACTURERS CODE: 17856
MFR SOURCE CONTROLLING REFERENCE: V13459
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SENSITIVE ELECTRONIC DEVICE
Related Searches:
32070-1
TRANSISTOR
NSN, MFG P/N
5961014540469
NSN
5961-01-454-0469
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: PYLON DECODER UNIT;MODEL PDU90
MANUFACTURERS CODE: 43611
MFR SOURCE CONTROLLING REFERENCE: 32070-1
OVERALL DIAMETER: 0.305 INCHES MINIMUM AND 0.335 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
Related Searches:
UF5406
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014541521
NSN
5961-01-454-1521
UF5406
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014541521
NSN
5961-01-454-1521
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
647462-18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014541812
NSN
5961-01-454-1812
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: RECEIVER/TRANSMITTER (ACR-222)
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT