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5961-01-462-3350
20 Products
LO4943
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014623350
NSN
5961-01-462-3350
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4943
THE MANUFACTURERS DATA:
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6010018-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618172
NSN
5961-01-461-8172
6010018-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618172
NSN
5961-01-461-8172
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: POWER SUPPLY E/I FSCM 06481
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MMSZ5230B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618179
NSN
5961-01-461-8179
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AS4122AMAPL E/I FSCM 04713
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-123
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.5 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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MMSZ5230BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618179
NSN
5961-01-461-8179
MMSZ5230BT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618179
NSN
5961-01-461-8179
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AS4122AMAPL E/I FSCM 04713
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOD-123
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.5 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618185
NSN
5961-01-461-8185
TA201218-03DH
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618185
NSN
5961-01-461-8185
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: SCR CONTROLLED E/I FSCM 30233
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LMC555
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618249
NSN
5961-01-461-8249
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III END ITEM IDENTIFICATION: SCR CONTROLLED E/I FSCM 30233
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89102-1N5819TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618861
NSN
5961-01-461-8861
89102-1N5819TX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014618861
NSN
5961-01-461-8861
MFG
DLA LAND AND MARITIME
Description
III END ITEM IDENTIFICATION: AIRROUTE SUSRVEILLANCE RADAR, 4 (ARSR-4)
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1-001-0404-0013
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014619231
NSN
5961-01-461-9231
1-001-0404-0013
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014619231
NSN
5961-01-461-9231
MFG
AVIONIC INSTRUMENTS INC
Description
III END ITEM IDENTIFICATION: STATIC INVERTERS 1B350-1B AND 1B350-1B-1
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1-001-0404-0014
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014619232
NSN
5961-01-461-9232
1-001-0404-0014
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014619232
NSN
5961-01-461-9232
MFG
AVIONIC INSTRUMENTS INC
Description
III END ITEM IDENTIFICATION: STATIC INVERTERS 1B350-1B AND 1B350-1B-1
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UES1103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014619285
NSN
5961-01-461-9285
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, DC
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IRKC56/12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014619772
NSN
5961-01-461-9772
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 83.0 GRAMS
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: GENERAL PURPOSE HIGH VOLATGE APPLICATIONS SUCH AS BATTERY CHARGERS, WELDERS, AND PLATING EQUIPMENT
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 3.620 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTRICALLY ISOLATED DBC PLATE; CAN BE INTERCONNECTED TO FORM SINGLE PHASE OR THREE PHASE BRIDGES; TWO DIODES/COMMON CATHODE; 10 MA RRM MAX. AT 150 DEGC
TERMINAL TYPE AND QUANTITY: 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014620319
NSN
5961-01-462-0319
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: BOWTHRUSTER O E/I FSCM 30233
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527
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014621539
NSN
5961-01-462-1539
MFG
STORK-KWANT BV
Description
DESIGN CONTROL REFERENCE: 527
III END ITEM IDENTIFICATION: MSCC OPERATOR PANEL; P/N RPI-95-29969 ONBOARD WAGB 420 FT U.S. COAST GUARD VESSELS
MANUFACTURERS CODE: S7050
THE MANUFACTURERS DATA:
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2500007-301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014622266
NSN
5961-01-462-2266
2500007-301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014622266
NSN
5961-01-462-2266
MFG
NATIONAL WEATHER SERVICE NEXRAD RADAR OPERATIONS CENTER
Description
III END ITEM IDENTIFICATION: NEXT GENERATION RADAR (NEXRAD)
SPECIAL FEATURES: BACKSWING DIODE STACK (MODIFIED WESTINGHOUSE P/N D55757G01)
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312A673G1
TRANSISTOR
NSN, MFG P/N
5961014622419
NSN
5961-01-462-2419
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: F110-100/129
SPECIAL FEATURES: CIRCULAR 1/4 INCH DIAM, SILICONE, FIBER & COPPER; PART OF CCA ASSY USED IN DIGITAL ELECTRONIC CONTROL (DEC)
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DMF2190-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014622450
NSN
5961-01-462-2450
DMF2190-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014622450
NSN
5961-01-462-2450
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
TERMINAL TYPE AND QUANTITY: 4 BEAM LEAD
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199C6763G4
TRANSISTOR
NSN, MFG P/N
5961014622454
NSN
5961-01-462-2454
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: F110-100/129
SPECIAL FEATURES: CIRCULAR 1/4 INCH DIAM,SILICONE, FIBER & COPPER;PART OF CCA ASSY USED IN DIGITAL ELECTRONIC CONTROL (DEC)
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SI9410DY
TRANSISTOR
NSN, MFG P/N
5961014623090
NSN
5961-01-462-3090
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 1.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 30.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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3359AS927
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014623142
NSN
5961-01-462-3142
MFG
NAVAL AIR SYSTEMS COMMAND
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.138 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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35-2257
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014623350
NSN
5961-01-462-3350
35-2257
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014623350
NSN
5961-01-462-3350
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4943
THE MANUFACTURERS DATA: