My Quote Request
5961-01-464-4598
20 Products
P21R-4010-V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644598
NSN
5961-01-464-4598
P21R-4010-V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644598
NSN
5961-01-464-4598
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM ON-STATE CURRENT, PEAK
III END ITEM IDENTIFICATION: CHARGER / IFSCM92731
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BASE SUPPLY VOLTAGE
Related Searches:
1SS84
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014641751
NSN
5961-01-464-1751
MFG
HITACHI KOKUSAI ELECTRIC AMERICA LTD .
Description
CAPACITANCE RATING IN PICOFARADS: 5.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 1.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM03950
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 2.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 2.000 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 26.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
ND412G-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014641836
NSN
5961-01-464-1836
ND412G-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014641836
NSN
5961-01-464-1836
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.800 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.800 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: WIDEBANDOPERATION
TERMINAL LENGTH: 2.900 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR
Related Searches:
652-4404-001
TRANSISTOR
NSN, MFG P/N
5961014641863
NSN
5961-01-464-1863
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: FY92/93ANGTKE/IFSCM98897
Related Searches:
352-7959-010
TRANSISTOR
NSN, MFG P/N
5961014641865
NSN
5961-01-464-1865
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: FY92/93ANG TK E/IFSCM98897
Related Searches:
81RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014642652
NSN
5961-01-464-2652
81RIA120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014642652
NSN
5961-01-464-2652
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL WIDTH ACROSS FLATS: 1.160 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 INSULATED WIRE LEAD
THREAD QUANTITY PER INCH: 20
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
S368HRQ
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014643710
NSN
5961-01-464-3710
MFG
BKC SEMICONDUCTORS INC
Description
CAPACITANCE RATING IN PICOFARADS: 6.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: DCN'ONLYE/IFSCM66891
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 55.880 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MICROWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 2.260 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 5.080 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
075130043
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014643720
NSN
5961-01-464-3720
MFG
TECHNOLOGY DYNAMICS INC. DBA MID-EASTERN INDUSTRIES DIV DIV MID-EASTERN INDUSTRIES
Description
III END ITEM IDENTIFICATION: 6130014411746E/IFSCM06179
Related Searches:
BRUS360W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014643720
NSN
5961-01-464-3720
MFG
EDI DISTRIBUTORS INC.
Description
III END ITEM IDENTIFICATION: 6130014411746E/IFSCM06179
Related Searches:
D0055066
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014643871
NSN
5961-01-464-3871
D0055066
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014643871
NSN
5961-01-464-3871
MFG
AVEL-LINDBERG INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 NOMINAL REGULATOR VOLTAGE
DESIGN CONTROL REFERENCE: D0055066
III END ITEM IDENTIFICATION: POWER SUPPLY UNIT, PART NUMBER TR3000/20 ABOARD 420 FT WAGB COAST GUARD VESSELS
MANUFACTURERS CODE: 0J5J6
THE MANUFACTURERS DATA:
Related Searches:
157013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014643877
NSN
5961-01-464-3877
157013
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014643877
NSN
5961-01-464-3877
MFG
LOGIMETRICS INC
Description
III END ITEM IDENTIFICATION: ENDITEME/IFSCM33013
Related Searches:
958-165
TRANSISTOR
NSN, MFG P/N
5961014643992
NSN
5961-01-464-3992
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: JOINT STARS PROGRAM
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.544 INCHES MAXIMUM
OVERALL WIDTH: 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.038 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL LENGTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
NSP-2117
TRANSISTOR
NSN, MFG P/N
5961014643992
NSN
5961-01-464-3992
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: JOINT STARS PROGRAM
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.544 INCHES MAXIMUM
OVERALL WIDTH: 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.038 INCHES MINIMUM AND 0.043 INCHES MAXIMUM
TERMINAL LENGTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SET100111
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014644074
NSN
5961-01-464-4074
SET100111
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014644074
NSN
5961-01-464-4074
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 90.00 AMPERES REVERSE CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 WORKING PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: AIRCRAFT, HERCULES C-130
MOUNTING METHOD: THREADED STUD
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB
Related Searches:
2SC3356
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644127
NSN
5961-01-464-4127
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625014430552E/IFSCM0T1F7
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.500 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.100 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UHF/MICROWAVE NPN BJT
TERMINAL LENGTH: 1.400 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
1SS283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644131
NSN
5961-01-464-4131
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: 6625014430552E/IFSCM0T1F7
Related Searches:
1SS317
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644133
NSN
5961-01-464-4133
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
III END ITEM IDENTIFICATION: 6625014430552E/IFSCM0T1F7
Related Searches:
A1SS317
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644133
NSN
5961-01-464-4133
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: 6625014430552E/IFSCM0T1F7
Related Searches:
1SS314
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014644219
NSN
5961-01-464-4219
MFG
ANRITSU COMPANY
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM0T1F7
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.500 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 1.2500 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 1.700 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BUP23C
TRANSISTOR
NSN, MFG P/N
5961014644525
NSN
5961-01-464-4525
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-218AB
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.480 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC