My Quote Request
5961-01-466-0294
20 Products
D3SB60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660294
NSN
5961-01-466-0294
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
JANTXV1N977B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014655609
NSN
5961-01-465-5609
JANTXV1N977B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014655609
NSN
5961-01-465-5609
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N977B-1
III END ITEM IDENTIFICATION: AIRCRAFT.F.111E/IFSCM81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117L
OVERALL LENGTH: 81.280 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 2.290 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 5.080 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500/117L SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
148126-01
TRANSISTOR
NSN, MFG P/N
5961014655713
NSN
5961-01-465-5713
MFG
GE AVIATION SYSTEMS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009-01TX
III END ITEM IDENTIFICATION: 5895014441218
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009
OVERALL LENGTH: 30.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 22.230 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 8.330 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N5241
TRANSISTOR
NSN, MFG P/N
5961014655713
NSN
5961-01-465-5713
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009-01TX
III END ITEM IDENTIFICATION: 5895014441218
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009
OVERALL LENGTH: 30.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 22.230 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 8.330 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
99009
TRANSISTOR
NSN, MFG P/N
5961014655713
NSN
5961-01-465-5713
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009-01TX
III END ITEM IDENTIFICATION: 5895014441218
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009
OVERALL LENGTH: 30.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 22.230 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 8.330 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTX2N5241
TRANSISTOR
NSN, MFG P/N
5961014655713
NSN
5961-01-465-5713
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009-01TX
III END ITEM IDENTIFICATION: 5895014441218
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 99009
OVERALL LENGTH: 30.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 22.230 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 8.330 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
JANTXV1N4480
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014656376
NSN
5961-01-465-6376
JANTXV1N4480
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014656376
NSN
5961-01-465-6376
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4480
III END ITEM IDENTIFICATION: AIRCRAFT,F-111E\IFSCM81349
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
SPEC/STD CONTROLLING DATA:
Related Searches:
77A109715P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014657929
NSN
5961-01-465-7929
77A109715P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014657929
NSN
5961-01-465-7929
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: FPS-117 RADAR SYSTEM
Related Searches:
77A560872P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014657930
NSN
5961-01-465-7930
77A560872P002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014657930
NSN
5961-01-465-7930
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: FPS-117 RADAR SYSTEM
Related Searches:
JANTX1N4465US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014658565
NSN
5961-01-465-8565
JANTX1N4465US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014658565
NSN
5961-01-465-8565
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 143.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT,AIRLINER C-17A E/IFSCM81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4465US
OVERALL LENGTH: 70.100 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406C GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 2.160 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 4.060 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.5 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
JANTX1N4472US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014658567
NSN
5961-01-465-8567
JANTX1N4472US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014658567
NSN
5961-01-465-8567
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 71.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT,AIRLINER C-17A E/IFSCM81349
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4472US
OVERALL LENGTH: 70.100 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 41.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406C GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 2.160 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 4.060 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 21.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
584641
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014658714
NSN
5961-01-465-8714
MFG
BRP US INC.
Description
III END ITEM IDENTIFICATION: AIRCRAFT,F-16
Related Searches:
381484-1
TRANSISTOR
NSN, MFG P/N
5961014659998
NSN
5961-01-465-9998
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: TESTSET,TTU-205
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.145 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 30.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL LENGTH: 0.420 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE, RMS
Related Searches:
2SC3617
TRANSISTOR
NSN, MFG P/N
5961014660279
NSN
5961-01-466-0279
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 6625-01-425-2551//6625-01-443-0552; OSPREY CLASS MHC; AVENGER CLASS MCM; KILAUEA CLASS T-AE26; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; ARLEIGH BURKE CLASS DDG; OLIVER PERRY CLASS FFG; TARAWA CLASS LHA; SUPPLY CLASS AOE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 4.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 2.600 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
34P103038C
TRANSISTOR
NSN, MFG P/N
5961014660283
NSN
5961-01-466-0283
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
RD5.1MB2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660284
NSN
5961-01-466-0284
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
1SS123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660287
NSN
5961-01-466-0287
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
A1SS123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660287
NSN
5961-01-466-0287
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
D10SC4MR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660288
NSN
5961-01-466-0288
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT
Related Searches:
D10SC4M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014660290
NSN
5961-01-466-0290
MFG
ANRITSU COMPANY
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE TEST EQUIPMENT