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5961-01-471-1819
20 Products
JAN2N7335
TRANSISTOR
NSN, MFG P/N
5961014711819
NSN
5961-01-471-1819
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N7335
III END ITEM IDENTIFICATION: ACFT F-14
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/599C
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
OVERALL WIDTH: 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/599C GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
NH632049
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014706985
NSN
5961-01-470-6985
NH632049
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014706985
NSN
5961-01-470-6985
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 0.95 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
III END ITEM IDENTIFICATION: E/I FSCM AIRCRAFT,B-2 BOMBER (ATB)
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 07690
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 632049-03
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.770 INCHES MAXIMUM
OVERALL WIDTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 07690-632049 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
4030012-3
TRANSISTOR
NSN, MFG P/N
5961014707693
NSN
5961-01-470-7693
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
III END ITEM IDENTIFICATION: E/I FSCM AIRCRAFT,AIRLINER C-17A
Related Searches:
VN2106NF
TRANSISTOR
NSN, MFG P/N
5961014707693
NSN
5961-01-470-7693
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: E/I FSCM AIRCRAFT,AIRLINER C-17A
Related Searches:
4030019-1
TRANSISTOR
NSN, MFG P/N
5961014707697
NSN
5961-01-470-7697
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
III END ITEM IDENTIFICATION: E/I FSCM AIRCRAFT,AIRLIFTER C-17A
Related Searches:
MTD5P06V
TRANSISTOR
NSN, MFG P/N
5961014707697
NSN
5961-01-470-7697
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: E/I FSCM AIRCRAFT,AIRLIFTER C-17A
Related Searches:
MTV4030-14-85
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014707965
NSN
5961-01-470-7965
MTV4030-14-85
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014707965
NSN
5961-01-470-7965
MFG
SEMI-GENERAL INC .
Description
III END ITEM IDENTIFICATION: ARI 23338
SPECIAL FEATURES: MANUFACTURER NOMENCLATURE TUNING VARACTOR; SILICON ABRUPT JUNCTION DEVICES OFFER HIGHEST Q AND LOWEST RESISTANCE AVAILABLE IN 30 VOLT TUNING DIODES; SILICON DIOXIDE PASSIVATION PROCESS ASSURES GREATER STABILITY, RELIABILITY AND LOW LEAKAGE CURRENTS AT
~1: HIGHER TEMPERATURES; USED FOR NARROW AND WIDE BAND TUNING THROUGH X-BAND; OPERATING TEMPERATURE -55 TO +150 DEGREES C
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VA-70-0577-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014707965
NSN
5961-01-470-7965
VA-70-0577-014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014707965
NSN
5961-01-470-7965
MFG
SELEX GALILEO LTD
Description
III END ITEM IDENTIFICATION: ARI 23338
SPECIAL FEATURES: MANUFACTURER NOMENCLATURE TUNING VARACTOR; SILICON ABRUPT JUNCTION DEVICES OFFER HIGHEST Q AND LOWEST RESISTANCE AVAILABLE IN 30 VOLT TUNING DIODES; SILICON DIOXIDE PASSIVATION PROCESS ASSURES GREATER STABILITY, RELIABILITY AND LOW LEAKAGE CURRENTS AT
~1: HIGHER TEMPERATURES; USED FOR NARROW AND WIDE BAND TUNING THROUGH X-BAND; OPERATING TEMPERATURE -55 TO +150 DEGREES C
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STM15N40/3
TRANSISTOR
NSN, MFG P/N
5961014708640
NSN
5961-01-470-8640
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
III END ITEM IDENTIFICATION: NON-DIRECTIONAL BEACON (NDB)
Related Searches:
1N6138
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014709671
NSN
5961-01-470-9671
MFG
SEMTECH CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
OVERALL LENGTH: 1.940 INCHES MINIMUM AND 2.795 INCHES MAXIMUM
OVERALL WIDTH: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SPECIAL FEATURES: 1500 WATT BI-POLARITY TRANSIENT VOLTAGE SUPPRESSOR; AXIAL LEADED; OPERATING TEMP. M 65 DEG. C TO 175 DEG. C
Related Searches:
171-2022
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014709756
NSN
5961-01-470-9756
171-2022
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014709756
NSN
5961-01-470-9756
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
P/O298A7135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014710329
NSN
5961-01-471-0329
P/O298A7135
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014710329
NSN
5961-01-471-0329
MFG
SOLTEC INC.
Description
SPECIAL FEATURES: READY FOR BACK TRANSFER; J6R; 5-28-2008.
Related Searches:
0606.4455.00
TRANSISTOR
NSN, MFG P/N
5961014710419
NSN
5961-01-471-0419
MFG
ROHDE & SCHWARZ NORGE A/S
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: ECCM-PROCESSOR GP407H1
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
RFP12P10
TRANSISTOR
NSN, MFG P/N
5961014710419
NSN
5961-01-471-0419
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: ECCM-PROCESSOR GP407H1
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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1190F510ITEM5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710714
NSN
5961-01-471-0714
1190F510ITEM5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710714
NSN
5961-01-471-0714
MFG
PEERLESS INSTRUMENT CO. INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8466A55H10
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
8466A55H10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710714
NSN
5961-01-471-0714
8466A55H10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710714
NSN
5961-01-471-0714
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8466A55H10
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
1190F510ITEM4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710719
NSN
5961-01-471-0719
1190F510ITEM4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710719
NSN
5961-01-471-0719
MFG
PEERLESS INSTRUMENT CO. INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8466A55H11
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
8466A55H11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710719
NSN
5961-01-471-0719
8466A55H11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014710719
NSN
5961-01-471-0719
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8466A55H11
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
12FLR60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014711235
NSN
5961-01-471-1235
12FLR60S02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014711235
NSN
5961-01-471-1235
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.7 GRAMS
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0.4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.138 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
TERMINAL LENGTH: 0.438 INCHES NOMINAL AND 0.395 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
R7247C AND C7012E
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014711379
NSN
5961-01-471-1379
R7247C AND C7012E
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014711379
NSN
5961-01-471-1379
MFG
HONEYWELL INC RESIDENTIAL DIV
Description
SPECIAL FEATURES: A GROUPING OF TWO OR MORE SEMICONDUCTING DEVICES SUCH AS LIGHT EMITTING DIODES