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5961-01-474-7583
20 Products
9107809100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014747583
NSN
5961-01-474-7583
9107809100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014747583
NSN
5961-01-474-7583
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: USED ON BASLER SYSTEM NUMBER 9203300100, REF NAVSEA NUMBER S9211-56-MMA-000/N
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TRANSISTOR
NSN, MFG P/N
5961014742967
NSN
5961-01-474-2967
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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IRF540NS
TRANSISTOR
NSN, MFG P/N
5961014742974
NSN
5961-01-474-2974
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 23.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.69 MILLIMETERS MAXIMUM
OVERALL LENGTH: 15.49 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.16 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 130.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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356A1450P48
TRANSISTOR
NSN, MFG P/N
5961014742978
NSN
5961-01-474-2978
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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IRF9540NS
TRANSISTOR
NSN, MFG P/N
5961014742978
NSN
5961-01-474-2978
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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IRFR320
TRANSISTOR
NSN, MFG P/N
5961014742984
NSN
5961-01-474-2984
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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IRFR9120
TRANSISTOR
NSN, MFG P/N
5961014742990
NSN
5961-01-474-2990
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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2N7002LT1
TRANSISTOR
NSN, MFG P/N
5961014742997
NSN
5961-01-474-2997
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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1N6103 JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743667
NSN
5961-01-474-3667
1N6103 JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743667
NSN
5961-01-474-3667
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 2.140 INCHES MINIMUM AND 2.785 INCHES MAXIMUM
OVERALL WIDTH: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
SPECIAL FEATURES: LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 500 WATT PEAK PULSE POWER; 1.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MINIMUM BREAKDOWN VOLTAGE, DC
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JTX1N6103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743667
NSN
5961-01-474-3667
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 2.140 INCHES MINIMUM AND 2.785 INCHES MAXIMUM
OVERALL WIDTH: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
SPECIAL FEATURES: LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 500 WATT PEAK PULSE POWER; 1.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MINIMUM BREAKDOWN VOLTAGE, DC
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FX1N6159
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743668
NSN
5961-01-474-3668
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 1.940 INCHES MINIMUM AND 2.785 INCHES MAXIMUM
OVERALL WIDTH: 0.135 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SPECIAL FEATURES: LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 1500 WATT PEAK PULSE POWER; 7.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.9 MINIMUM BREAKDOWN VOLTAGE, DC
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1N6121A JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743669
NSN
5961-01-474-3669
1N6121A JANTX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743669
NSN
5961-01-474-3669
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 2.140 INCHES MINIMUM AND 2.785 INCHES MAXIMUM
OVERALL WIDTH: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
SPECIAL FEATURES: LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 500 WATT PEAK PULSE POWER; 1.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.7 MINIMUM BREAKDOWN VOLTAGE, DC
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JTX1N6121A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743669
NSN
5961-01-474-3669
JTX1N6121A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014743669
NSN
5961-01-474-3669
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
OVERALL LENGTH: 2.140 INCHES MINIMUM AND 2.785 INCHES MAXIMUM
OVERALL WIDTH: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
SPECIAL FEATURES: LOW DYNAMIC IMPEDANCE; HERMETICALLY SEALED IN METOXILLITE FUSED METAL OXIDE; 500 WATT PEAK PULSE POWER; 1.5 WATT CONTINUOUS; AXIAL LEADED; HIGH RELIABILITY
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 38.7 MINIMUM BREAKDOWN VOLTAGE, DC
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TJSE20701
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014744395
NSN
5961-01-474-4395
MFG
AMPHENOL PCD INC.
Description
III END ITEM IDENTIFICATION: CT 133 AIRCRAFT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES MAXIMUM
OVERALL WIDTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014744408
NSN
5961-01-474-4408
353-2075-012
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014744408
NSN
5961-01-474-4408
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
III END ITEM IDENTIFICATION: HAWKEYE
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BC856BLT1
TRANSISTOR
NSN, MFG P/N
5961014744826
NSN
5961-01-474-4826
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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MMBF4856LT1
TRANSISTOR
NSN, MFG P/N
5961014744832
NSN
5961-01-474-4832
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: E/IFSCM 1430014338025
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671164
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014744854
NSN
5961-01-474-4854
MFG
DIGI-KEY CORPORATION
Description
III END ITEM IDENTIFICATION: E/IFSCM NAVY EQUIP
SPECIAL FEATURES: 5MM,GREEN,PNL
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06431
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014747213
NSN
5961-01-474-7213
MFG
BASLER ELECTRIC COMPANY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: 9USED ON BASLER SYSTEM NUMBER 9203300100, REF NAVSEA NUMBER S9211-56-MMA-000/N
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE
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06432
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014747573
NSN
5961-01-474-7573
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: USED ON BASLER SYSTEM NUMBER 9203300100, REF NAVSEA NUMBER S9211-56-MMA-000/N
SEMICONDUCTOR MATERIAL: SILICON