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5961-01-475-1898
20 Products
2N6849JANTX
TRANSISTOR
NSN, MFG P/N
5961014751898
NSN
5961-01-475-1898
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 16.8 MILLIMETERS MINIMUM AND 18.8 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.7 MILLIMETERS MINIMUM AND 14.2 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM DRAIN TO GATE VOLTAGE
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9067201103
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014747589
NSN
5961-01-474-7589
9067201103
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014747589
NSN
5961-01-474-7589
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: USED ON BASLER SYSTEM NUMBER 9203300100, REF NAVSEA NUMBER S9211-56-MMA-000/N
Related Searches:
9095000015
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014747599
NSN
5961-01-474-7599
9095000015
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014747599
NSN
5961-01-474-7599
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: NAVY EQUIP
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08608
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014747605
NSN
5961-01-474-7605
MFG
BASLER ELECTRIC COMPANY
Description
III END ITEM IDENTIFICATION: NAVY EQUIP
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U350
TRANSISTOR
NSN, MFG P/N
5961014748014
NSN
5961-01-474-8014
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: N-CHANNEL JFET RING DEMODULATOR
TERMINAL TYPE AND QUANTITY: 7 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 1.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
BD244C
TRANSISTOR
NSN, MFG P/N
5961014748277
NSN
5961-01-474-8277
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES NOMINAL COLLECTOR CURRENT, DC AND 3.00 AMPERES NOMINAL BASE CURRENT, DC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS CASE AND 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 115.0 NOMINAL COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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142001PC46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748542
NSN
5961-01-474-8542
142001PC46
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748542
NSN
5961-01-474-8542
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4561B
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
JANTX1N4561B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748542
NSN
5961-01-474-8542
JANTX1N4561B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748542
NSN
5961-01-474-8542
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4561B
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
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142001PC33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748737
NSN
5961-01-474-8737
142001PC33
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748737
NSN
5961-01-474-8737
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 142176
MANUFACTURERS CODE: 94271
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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MMBZ5231BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748821
NSN
5961-01-474-8821
MMBZ5231BL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014748821
NSN
5961-01-474-8821
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: 1430014338025
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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13307234
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014748866
NSN
5961-01-474-8866
13307234
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014748866
NSN
5961-01-474-8866
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: 1430014338025
MATERIAL: PAPER
MATERIAL DOCUMENT AND CLASSIFICATION: MIL-P-46123 MIL SPEC ALL MATERIAL RESPONSES
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5082-2794
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014750156
NSN
5961-01-475-0156
MFG
HEWLETT-PACKARD CO COMMUNICATIONS COMPONENTS/AVANTEK DIV
Description
CAPACITANCE RATING IN PICOFARADS: 0.18 NOMINAL
FUNCTION FOR WHICH DESIGNED: DETECTOR AND MIXER
INCLOSURE MATERIAL: CERAMIC AND PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODES ARE ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 2 PIN
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1N963BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751008
NSN
5961-01-475-1008
1N963BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751008
NSN
5961-01-475-1008
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 32.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N963BUR-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-213AA
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/11
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT ROUND CAPS; METALLURGICAL BOND
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N963BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751008
NSN
5961-01-475-1008
JANTX1N963BUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751008
NSN
5961-01-475-1008
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 32.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N963BUR-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-213AA
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/11
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT ROUND CAPS; METALLURGICAL BOND
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N746AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751010
NSN
5961-01-475-1010
1N746AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751010
NSN
5961-01-475-1010
MFG
MICROSEMI CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N746AUR-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM PEAK TURN-ON POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ROUND END CAPS; PACKAGE D0-213AA
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N746AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751010
NSN
5961-01-475-1010
JANTX1N746AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751010
NSN
5961-01-475-1010
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N746AUR-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM PEAK TURN-ON POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ROUND END CAPS; PACKAGE D0-213AA
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N6113AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751012
NSN
5961-01-475-1012
MFG
MICROSEMI CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6113AUS
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SQUARE END CAP DIODES; 500 WATT MX. PEAK PULSE POWER; E-MELF PACKAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JANTX1N6113AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751012
NSN
5961-01-475-1012
JANTX1N6113AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751012
NSN
5961-01-475-1012
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6113AUS
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SQUARE END CAP DIODES; 500 WATT MX. PEAK PULSE POWER; E-MELF PACKAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N6103AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751016
NSN
5961-01-475-1016
MFG
MICROSEMI CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6103AUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 500 WATT MAX. PEAK PULSE POWER; E-MELF PACKAGE; SQUARE END CAP DIODES
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.1 NOMINAL BREAKDOWN VOLTAGE, DC AND 5.7 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N6103AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751016
NSN
5961-01-475-1016
JANTX1N6103AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014751016
NSN
5961-01-475-1016
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6103AUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 500 WATT MAX. PEAK PULSE POWER; E-MELF PACKAGE; SQUARE END CAP DIODES
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.1 NOMINAL BREAKDOWN VOLTAGE, DC AND 5.7 MAXIMUM WORKING PEAK REVERSE VOLTAGE