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5961-01-480-6801

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CMPZ5252B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806801

NSN

5961-01-480-6801

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CMPZ5252B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806801

NSN

5961-01-480-6801

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

MMBD1205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014804026

NSN

5961-01-480-4026

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MMBD1205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014804026

NSN

5961-01-480-4026

MFG

NATIONAL SEMICONDUCTOR CORPORATION

JANSG2N7270

TRANSISTOR

NSN, MFG P/N

5961014804448

NSN

5961-01-480-4448

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JANSG2N7270

TRANSISTOR

NSN, MFG P/N

5961014804448

NSN

5961-01-480-4448

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANSG2N7270
FEATURES PROVIDED: RADIATION HARDENED
III END ITEM IDENTIFICATION: KG-207
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/603
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 1.300 INCHES MINIMUM AND 1.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ESD SENSITIVE AND RADIATION HARDENED
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 UNTHREADED HOLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

2N1800

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014805281

NSN

5961-01-480-5281

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2N1800

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014805281

NSN

5961-01-480-5281

MFG

POWEREX INC

NDS9958

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014805661

NSN

5961-01-480-5661

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NDS9958

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014805661

NSN

5961-01-480-5661

MFG

FAIRCHILD SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: STV CAMERA SY
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.0688 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.1968 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.2440 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR

NDS9953A

TRANSISTOR

NSN, MFG P/N

5961014805662

NSN

5961-01-480-5662

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NDS9953A

TRANSISTOR

NSN, MFG P/N

5961014805662

NSN

5961-01-480-5662

MFG

FAIRCHILD SEMICONDUCTOR CORPORATION

BAS21LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014805683

NSN

5961-01-480-5683

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BAS21LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014805683

NSN

5961-01-480-5683

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CAPACITANCE RATING IN PICOFARADS: 5.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 625.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, OVERLOAD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND -55.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 1.110 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.040 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.500 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.040 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

321R106H01

TRANSISTOR

NSN, MFG P/N

5961014805909

NSN

5961-01-480-5909

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321R106H01

TRANSISTOR

NSN, MFG P/N

5961014805909

NSN

5961-01-480-5909

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

MAC228-8

TRANSISTOR

NSN, MFG P/N

5961014806046

NSN

5961-01-480-6046

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MAC228-8

TRANSISTOR

NSN, MFG P/N

5961014806046

NSN

5961-01-480-6046

MFG

FREESCALE SEMICONDUCTOR INC.

2N6764

TRANSISTOR

NSN, MFG P/N

5961014806047

NSN

5961-01-480-6047

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2N6764

TRANSISTOR

NSN, MFG P/N

5961014806047

NSN

5961-01-480-6047

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

1N4962

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806048

NSN

5961-01-480-6048

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1N4962

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806048

NSN

5961-01-480-6048

MFG

MICRO USPD INC

BAW56LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806069

NSN

5961-01-480-6069

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BAW56LT1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806069

NSN

5961-01-480-6069

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CAPACITANCE RATING IN PICOFARADS: 2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 700.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
III END ITEM IDENTIFICATION: STV CAMERA SY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND -55.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: COMPRESSION
OVERALL HEIGHT: 1.397 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.048 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.277 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.032 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

40CTQ045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806132

NSN

5961-01-480-6132

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40CTQ045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806132

NSN

5961-01-480-6132

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CAPACITANCE RATING IN PICOFARADS: 2800.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 20.00 AMPERES MINIMUM FORWARD CURRENT, AVERAGE AND 1240.00 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT AND 350.00 AMPERES MINIMUM PEAK REVERSE SURGE CURRENT
III END ITEM IDENTIFICATION: STV CAMERA SY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND -55.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 29.330 MILLIMETERS MAXIMUM
OVERALL LENGTH: 10.540 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.890 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

30WQ04F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806207

NSN

5961-01-480-6207

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30WQ04F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806207

NSN

5961-01-480-6207

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CAPACITANCE RATING IN PICOFARADS: 110.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: STV CAMERA SY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION AND -40.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 8.220 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.350 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.300 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

30WQ04FN

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806215

NSN

5961-01-480-6215

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30WQ04FN

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806215

NSN

5961-01-480-6215

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CAPACITANCE RATING IN PICOFARADS: 110.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 3.30 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: STV CAMERA SY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION AND -40.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 8.220 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.350 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.300 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

2N1793

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014806234

NSN

5961-01-480-6234

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2N1793

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961014806234

NSN

5961-01-480-6234

MFG

POWEREX INC

203DMQ100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014806522

NSN

5961-01-480-6522

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203DMQ100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014806522

NSN

5961-01-480-6522

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, DC
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.804 INCHES MINIMUM AND 0.927 INCHES MAXIMUM
OVERALL LENGTH: 3.550 INCHES MINIMUM AND 3.650 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
SPECIAL FEATURES: HIGH TEMPERATURE EPOXY ENCAPSULATION; CENTER TAP MODULE
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW

H5ER203DMQ100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014806522

NSN

5961-01-480-6522

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H5ER203DMQ100

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014806522

NSN

5961-01-480-6522

MFG

FISCHER PANDA U K LIMITED

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, DC
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.804 INCHES MINIMUM AND 0.927 INCHES MAXIMUM
OVERALL LENGTH: 3.550 INCHES MINIMUM AND 3.650 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
SPECIAL FEATURES: HIGH TEMPERATURE EPOXY ENCAPSULATION; CENTER TAP MODULE
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW

HSMS-2800-BLK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806598

NSN

5961-01-480-6598

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HSMS-2800-BLK

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806598

NSN

5961-01-480-6598

MFG

HEWLETT PACKARD CO

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: 2 TERMINALS; NON-LINEAR VOLTAGE CURRENT
SPECIAL FEATURES: SHOTTKY DIODE; 0.34 - 0.35 VOLTS; DESIGNATION, S0T23; JETDS NO. 1N5711

CMPZ5243B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806798

NSN

5961-01-480-6798

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CMPZ5243B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014806798

NSN

5961-01-480-6798

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC