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5961-01-484-7168

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D22-0026-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847168

NSN

5961-01-484-7168

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D22-0026-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847168

NSN

5961-01-484-7168

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,1A,60 VOLTS SCHOTTKY

11456368-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014845023

NSN

5961-01-484-5023

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11456368-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014845023

NSN

5961-01-484-5023

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

OVERALL LENGTH: 1.320 INCHES MINIMUM AND 1.370 INCHES MAXIMUM
SPECIAL FEATURES: DETECTOR, DIODE

11456368-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014845024

NSN

5961-01-484-5024

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11456368-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014845024

NSN

5961-01-484-5024

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

OVERALL LENGTH: 1.320 INCHES MINIMUM AND 1.370 INCHES MAXIMUM
SPECIAL FEATURES: DETECTOR, DIODE

Y01-0033-001

OSCILLATOR

NSN, MFG P/N

5961014845091

NSN

5961-01-484-5091

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Y01-0033-001

OSCILLATOR

NSN, MFG P/N

5961014845091

NSN

5961-01-484-5091

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Y01-0017-001

OSCILLATOR

NSN, MFG P/N

5961014845092

NSN

5961-01-484-5092

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Y01-0017-001

OSCILLATOR

NSN, MFG P/N

5961014845092

NSN

5961-01-484-5092

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Y01-0032-001

OSCILLATOR

NSN, MFG P/N

5961014845093

NSN

5961-01-484-5093

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Y01-0032-001

OSCILLATOR

NSN, MFG P/N

5961014845093

NSN

5961-01-484-5093

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Q15-0006-001

TRANSISTOR

NSN, MFG P/N

5961014845110

NSN

5961-01-484-5110

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Q15-0006-001

TRANSISTOR

NSN, MFG P/N

5961014845110

NSN

5961-01-484-5110

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Q26-0030-001

TRANSISTOR

NSN, MFG P/N

5961014846242

NSN

5961-01-484-6242

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Q26-0030-001

TRANSISTOR

NSN, MFG P/N

5961014846242

NSN

5961-01-484-6242

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: MILITARY AIRCRAFT
INTERNAL CONFIGURATION: FIELD EFFECT

01319485

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014846516

NSN

5961-01-484-6516

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01319485

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014846516

NSN

5961-01-484-6516

MFG

DEUTZ CORPORATION

12941517

TRANSISTOR

NSN, MFG P/N

5961014846807

NSN

5961-01-484-6807

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12941517

TRANSISTOR

NSN, MFG P/N

5961014846807

NSN

5961-01-484-6807

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 2350013285964
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941517
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 18.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2N869A

TRANSISTOR

NSN, MFG P/N

5961014846807

NSN

5961-01-484-6807

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2N869A

TRANSISTOR

NSN, MFG P/N

5961014846807

NSN

5961-01-484-6807

MFG

CRIMSON SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: 2350013285964
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941517
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.670 INCHES MINIMUM AND 0.960 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 18.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

10086-7106

TRANSISTOR

NSN, MFG P/N

5961014846969

NSN

5961-01-484-6969

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10086-7106

TRANSISTOR

NSN, MFG P/N

5961014846969

NSN

5961-01-484-6969

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

2N6519

TRANSISTOR

NSN, MFG P/N

5961014847041

NSN

5961-01-484-7041

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2N6519

TRANSISTOR

NSN, MFG P/N

5961014847041

NSN

5961-01-484-7041

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

10007-2075

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014847043

NSN

5961-01-484-7043

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10007-2075

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014847043

NSN

5961-01-484-7043

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

MAJOR COMPONENTS: LW SS SPLT 1, NUT 1, DIODE 1, BRACKET DIODE 1

D20-0005-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847158

NSN

5961-01-484-7158

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D20-0005-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847158

NSN

5961-01-484-7158

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,SOT-23

D12-0005-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847162

NSN

5961-01-484-7162

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D12-0005-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847162

NSN

5961-01-484-7162

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TERMINAL TYPE PIN, 12 WATTS, SW

CR-0294

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847163

NSN

5961-01-484-7163

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CR-0294

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847163

NSN

5961-01-484-7163

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: .25 WATTS, 100 VOLTS, TERMINAL TYPE PIN, CCR

D22-0012-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847164

NSN

5961-01-484-7164

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D22-0012-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847164

NSN

5961-01-484-7164

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 100 VOLTS, RECT FR, 5A

D22-0014-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847166

NSN

5961-01-484-7166

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D22-0014-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847166

NSN

5961-01-484-7166

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,3A, 50 VOLTS RECT FR

D22-0023-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847167

NSN

5961-01-484-7167

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D22-0023-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847167

NSN

5961-01-484-7167

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,1A, 200VOLTS UTRAFAST