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5961-01-503-3238
20 Products
JANTX1N4614CUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015033238
NSN
5961-01-503-3238
JANTX1N4614CUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015033238
NSN
5961-01-503-3238
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4614CUR-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL REGULATOR VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
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JANTX1N6621U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015026479
NSN
5961-01-502-6479
JANTX1N6621U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015026479
NSN
5961-01-502-6479
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6621U
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/585
OVERALL HEIGHT: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
TEST DATA DOCUMENT: Q81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N6622U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015026480
NSN
5961-01-502-6480
JANTX1N6622U
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015026480
NSN
5961-01-502-6480
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6622U
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/585
OVERALL HEIGHT: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.168 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/585 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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81393
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026671
NSN
5961-01-502-6671
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 PRINTED CIRCUIT
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HCT1279-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026671
NSN
5961-01-502-6671
HCT1279-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026671
NSN
5961-01-502-6671
MFG
OPTEK TECHNOLOGY INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 PRINTED CIRCUIT
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81471
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026675
NSN
5961-01-502-6675
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 PRINTED CIRCUIT
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HCT1278-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026675
NSN
5961-01-502-6675
HCT1278-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015026675
NSN
5961-01-502-6675
MFG
OPTEK TECHNOLOGY INC
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
III END ITEM IDENTIFICATION: AIRCRAFT, HORNET F/A-18 (E/F); CENTRAL PROCESSOR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 6 PRINTED CIRCUIT
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362687-3
TRANSISTOR
NSN, MFG P/N
5961015027002
NSN
5961-01-502-7002
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THREAD SERIES DESIGNATOR: UNF
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AT-1166H
TRANSISTOR
NSN, MFG P/N
5961015027002
NSN
5961-01-502-7002
MFG
POWER TECH INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THREAD SERIES DESIGNATOR: UNF
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PP8189
TRANSISTOR
NSN, MFG P/N
5961015027002
NSN
5961-01-502-7002
MFG
MICROSEMI PPC INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THREAD SERIES DESIGNATOR: UNF
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SFF15N80-3TX
TRANSISTOR
NSN, MFG P/N
5961015027351
NSN
5961-01-502-7351
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: AIRROUTE SURVEILLANCE RADAR4 (ARSR4)
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.562 INCHES MINIMUM AND 0.762 INCHES MAXIMUM
OVERALL LENGTH: 1.177 INCHES MINIMUM AND 1.197 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 MINIMUM GATE TO SOURCE VOLTAGE AND 4.5 MAXIMUM GATE TO SOURCE VOLTAGE
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130-007-1
TRANSISTOR KIT,AIRC
NSN, MFG P/N
5961015029358
NSN
5961-01-502-9358
MFG
BELL HELICOPTER TEXTRON INC.
Description
ACCESSORY COMPONENTS AND QUANTITY: MICA INSULATING WASHERS 3; NYLON INSULATING SLEEVE 1; BRIGH NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED BRASS HEX NUT 1; BRIGHT NICKEL PLATED CARBON STEEL INTERNAL TOOTH LOCIKWASHER
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: HELICOPTERS (H1)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY) TRANSISTOR, KIT ANALYZER
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177SMA115
TRANSISTOR KIT,AIRC
NSN, MFG P/N
5961015029358
NSN
5961-01-502-9358
MFG
SOLITRON DEVICES INC.
Description
ACCESSORY COMPONENTS AND QUANTITY: MICA INSULATING WASHERS 3; NYLON INSULATING SLEEVE 1; BRIGH NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED BRASS HEX NUT 1; BRIGHT NICKEL PLATED CARBON STEEL INTERNAL TOOTH LOCIKWASHER
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: HELICOPTERS (H1)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY) TRANSISTOR, KIT ANALYZER
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AP1131-WHDW-1
TRANSISTOR KIT,AIRC
NSN, MFG P/N
5961015029358
NSN
5961-01-502-9358
MFG
API ELECTRONICS INC.
Description
ACCESSORY COMPONENTS AND QUANTITY: MICA INSULATING WASHERS 3; NYLON INSULATING SLEEVE 1; BRIGH NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED CARBON STEEL FLAT WASHER 1; BRIGHT NICKEL PLATED BRASS HEX NUT 1; BRIGHT NICKEL PLATED CARBON STEEL INTERNAL TOOTH LOCIKWASHER
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: HELICOPTERS (H1)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY) TRANSISTOR, KIT ANALYZER
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99209097
TRANSISTOR
NSN, MFG P/N
5961015031806
NSN
5961-01-503-1806
MFG
THALES
Description
TERMINAL TYPE AND QUANTITY: 4 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM DRAIN TO SOURCE VOLTAGE
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SST215-T1
TRANSISTOR
NSN, MFG P/N
5961015031806
NSN
5961-01-503-1806
MFG
CALOGIC LLC
Description
TERMINAL TYPE AND QUANTITY: 4 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM DRAIN TO SOURCE VOLTAGE
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91805258
TRANSISTOR
NSN, MFG P/N
5961015031807
NSN
5961-01-503-1807
MFG
THALES
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -500.0 MINIMUM DRAIN TO SOURCE VOLTAGE AND -1.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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VP2450N3
TRANSISTOR
NSN, MFG P/N
5961015031807
NSN
5961-01-503-1807
MFG
SUPERTEX INC.
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -500.0 MINIMUM DRAIN TO SOURCE VOLTAGE AND -1.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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91805254
TRANSISTOR
NSN, MFG P/N
5961015031808
NSN
5961-01-503-1808
MFG
THALES
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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VN2450N3
TRANSISTOR
NSN, MFG P/N
5961015031808
NSN
5961-01-503-1808
MFG
SUPERTEX INC.
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM DRAIN TO SOURCE VOLTAGE AND 1.5 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE