My Quote Request
5961-01-507-4224
20 Products
SMCJ11CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074224
NSN
5961-01-507-4224
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: PRINTER CONTROL UNIT, UGC-143B(V)
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.079 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MODIFIED "J" BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.2 MINIMUM BREAKDOWN VOLTAGE, DC AND 13.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
890454
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074364
NSN
5961-01-507-4364
MFG
NAI TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: PRINTER CONTROL UNIT, UGC-143B(V)
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.079 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MODIFIED "J" BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 18.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMCJ15CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074364
NSN
5961-01-507-4364
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: PRINTER CONTROL UNIT, UGC-143B(V)
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.079 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MODIFIED "J" BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 18.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMCJ6.0CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074389
NSN
5961-01-507-4389
MFG
VISHAY INTERTECHNOLOGY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: PRINTER CONTROL UNIT, UGC-143B(V)
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.079 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MODIFIED "J" BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.67 MINIMUM BREAKDOWN VOLTAGE, DC AND 7.37 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMCJ6.OCA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074389
NSN
5961-01-507-4389
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: PRINTER CONTROL UNIT, UGC-143B(V)
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.079 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MODIFIED "J" BEND LEADS
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.67 MINIMUM BREAKDOWN VOLTAGE, DC AND 7.37 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
CSB7002-254/WAFER LE2763-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074666
NSN
5961-01-507-4666
CSB7002-254/WAFER LE2763-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015074666
NSN
5961-01-507-4666
MFG
SKYWORKS SOLUTIONS INC.
Description
FUNCTION FOR WHICH DESIGNED: SWITCHING
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MESA CONSTRUCTION; 5.0 MICRON I-REGION THICKNESS
Related Searches:
MMSD9114T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075085
NSN
5961-01-507-5085
MMSD9114T1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075085
NSN
5961-01-507-5085
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SWITCHING DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.6 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1SMB5918BT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075101
NSN
5961-01-507-5101
1SMB5918BT3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075101
NSN
5961-01-507-5101
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 294.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 3 WATT PLASTIC SURFACE MOUNT ZENER REGULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.9 MILLIMETERS MINIMUM AND 2.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.2 MILLIMETERS MINIMUM AND 5.6 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.3 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.8 MINIMUM REGULATOR VOLTAGE, DC AND 5.1 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
IRFZ46N
TRANSISTOR
NSN, MFG P/N
5961015075181
NSN
5961-01-507-5181
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 53.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.584 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 107.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
3404702
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075297
NSN
5961-01-507-5297
MFG
OSHKOSH CORPORATION
Description
III END ITEM IDENTIFICATION: HET 1070F HEAVY EQUIPMENT TRANSPORTER
SPECIAL FEATURES: OPER. TEMP. -55 DEG C TO 125 DEG ; MOISTURE RESISTANCE; MATERIAL THERMOPLASTIC SEALS, SILICONE ELASTOMER MATING
Related Searches:
DT04-4P-RT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075297
NSN
5961-01-507-5297
DT04-4P-RT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075297
NSN
5961-01-507-5297
MFG
DEUTSCH ENGINEERED CONNECTING DEVICES INC DBA DEFENSE AEROSPACE OPERATIONS DIV DEFENSE AEROSPACE OPERATIONS
Description
III END ITEM IDENTIFICATION: HET 1070F HEAVY EQUIPMENT TRANSPORTER
SPECIAL FEATURES: OPER. TEMP. -55 DEG C TO 125 DEG ; MOISTURE RESISTANCE; MATERIAL THERMOPLASTIC SEALS, SILICONE ELASTOMER MATING
Related Searches:
99214460
TRANSISTOR
NSN, MFG P/N
5961015075384
NSN
5961-01-507-5384
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 74.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
IRF4905S
TRANSISTOR
NSN, MFG P/N
5961015075384
NSN
5961-01-507-5384
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 74.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANEUVERING INSTRUMENTATION (ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
98612-313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015075473
NSN
5961-01-507-5473
MFG
HYDRAULICS INTERNATIONAL INC .
Description
DESIGN CONTROL REFERENCE: 98612-313
III END ITEM IDENTIFICATION: CONTRACTOR SUPPORTED ITEM; E-NSN ISIL
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER,AIRCRAFT
MANUFACTURERS CODE: 1VCN7
SPECIAL FEATURES: PRE-PROVISIONED NAVY ITEM, NAVICP PHIL IS POE
THE MANUFACTURERS DATA:
Related Searches:
356A1350P1
TRANSISTOR
NSN, MFG P/N
5961015075638
NSN
5961-01-507-5638
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANUVERING INSTRUMENTATION(ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.775 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TO-247AC PACKAGE STYLE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
IRFP260
TRANSISTOR
NSN, MFG P/N
5961015075638
NSN
5961-01-507-5638
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AIR COMBAT MANUVERING INSTRUMENTATION(ACMI)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HEXFET POWER MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.775 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: TO-247AC PACKAGE STYLE
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
5190-0170
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015075738
NSN
5961-01-507-5738
MFG
JOHNS HOPKINS UNIVERSITY APPLIED PHYSICS LABORATORY LLC THE DBA JHU/APL
Description
III END ITEM IDENTIFICATION: ARC FAULT DETECTOR, THERMAL MONITORING SYS
SPECIAL FEATURES: WIDE BAND PHOTO DETECTOR SURFACE CLASS, AFD/CTM ASSY
TERMINAL TYPE AND QUANTITY: 1 CONNECTOR, COAXIAL
Related Searches:
5190-0170-09
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015075738
NSN
5961-01-507-5738
5190-0170-09
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015075738
NSN
5961-01-507-5738
MFG
OSI OPTOELECTRONICS INC. DBA UNITED DETECTOR TECHNOLOGY
Description
III END ITEM IDENTIFICATION: ARC FAULT DETECTOR, THERMAL MONITORING SYS
SPECIAL FEATURES: WIDE BAND PHOTO DETECTOR SURFACE CLASS, AFD/CTM ASSY
TERMINAL TYPE AND QUANTITY: 1 CONNECTOR, COAXIAL
Related Searches:
3671224E396-1
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015076336
NSN
5961-01-507-6336
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
SEMICONDUCTOR DEVIC
Related Searches:
3671224E396-3
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015076341
NSN
5961-01-507-6341
MFG
NORTHROP GRUMMAN CORPORATION DBA INTEGRATED SYSTEMS SECTOR DIV INTEGRATED SYSTEMS SECTOR
Description
SEMICONDUCTOR DEVIC