My Quote Request
5961-01-523-0959
20 Products
741774-K01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015230959
NSN
5961-01-523-0959
741774-K01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015230959
NSN
5961-01-523-0959
MFG
SPD ELECTRICAL SYSTEMS INC
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 741774-K01
MANUFACTURERS CODE: 30086
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:
Related Searches:
T5961-0013-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229124
NSN
5961-01-522-9124
T5961-0013-003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229124
NSN
5961-01-522-9124
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
Related Searches:
99218006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229455
NSN
5961-01-522-9455
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 24.60 AMPERES NOMINAL PEAK POINT CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.084 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIDIRECTIONAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 18.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMBJ15CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229455
NSN
5961-01-522-9455
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 24.60 AMPERES NOMINAL PEAK POINT CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.084 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BIDIRECTIONAL
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.7 MINIMUM BREAKDOWN VOLTAGE, DC AND 18.5 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SMBJ17A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229456
NSN
5961-01-522-9456
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 21.70 AMPERES MAXIMUM PEAK POINT CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AA
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.084 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 20.9 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
816-3385-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015229461
NSN
5961-01-522-9461
816-3385-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015229461
NSN
5961-01-522-9461
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: KC135/R/T TANKER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE BOX MODIFICATION
MAJOR COMPONENTS: 66 DIODES,2 CIRCUIT CARDS(MODIFIED),1 DIODE BOX MODIFICATION WITH 2 ELECTRICAL CONNECTORS,1 MARKER LABEL
Related Searches:
R5021218FSZT-PRX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229750
NSN
5961-01-522-9750
R5021218FSZT-PRX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229750
NSN
5961-01-522-9750
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688).
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST RECOVERY STUD DIODE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES AND 0.375 INCHES
OVERALL LENGTH: 2.740 INCHES NOMINAL
OVERALL WIDTH: 1.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD QUANTITY PER INCH: 28 AND 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
143460-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229770
NSN
5961-01-522-9770
143460-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229770
NSN
5961-01-522-9770
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
III END ITEM IDENTIFICATION: AIRCRAFT, HAWKEYE E-2C
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SHA99-3155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229770
NSN
5961-01-522-9770
SHA99-3155
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229770
NSN
5961-01-522-9770
MFG
AVNET MICROWAVE TECHNICAL SOLUTIONS
Description
III END ITEM IDENTIFICATION: AIRCRAFT, HAWKEYE E-2C
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SXA-289
TRANSISTOR
NSN, MFG P/N
5961015229913
NSN
5961-01-522-9913
MFG
SIRENZA MICRODEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, DC
III END ITEM IDENTIFICATION: AIRCRAFT, HAWKEYE E-2C
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.177 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1500.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM OFF-STATE VOLTAGE, DC
Related Searches:
R5031218FSZT-PRX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229937
NSN
5961-01-522-9937
R5031218FSZT-PRX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015229937
NSN
5961-01-522-9937
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688).
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES AND 0.375 INCHES
OVERALL LENGTH: 2.740 INCHES NOMINAL
OVERALL WIDTH: 1.060 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD QUANTITY PER INCH: 28 AND 24
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
224-03-DWG REF DES CR1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015229970
NSN
5961-01-522-9970
224-03-DWG REF DES CR1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015229970
NSN
5961-01-522-9970
MFG
PIVOTAL POWER INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 124.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
Related Searches:
VBO125-16NO7
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015229970
NSN
5961-01-522-9970
VBO125-16NO7
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015229970
NSN
5961-01-522-9970
MFG
IXYS CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 124.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 REPETITIVE PEAK REVERSE VOLTAGE
MOUNTING METHOD: THREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
Related Searches:
224-03-PL REF DES Q1,Q2
TRANSISTOR
NSN, MFG P/N
5961015230008
NSN
5961-01-523-0008
MFG
PIVOTAL POWER INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COOLMOS POWER MOSFET
INCLOSURE MATERIAL: CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.460 INCHES MINIMUM AND 0.481 INCHES MAXIMUM
OVERALL LENGTH: 1.489 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.001 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IXKN75N60C
TRANSISTOR
NSN, MFG P/N
5961015230008
NSN
5961-01-523-0008
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: COOLMOS POWER MOSFET
INCLOSURE MATERIAL: CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.460 INCHES MINIMUM AND 0.481 INCHES MAXIMUM
OVERALL LENGTH: 1.489 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
OVERALL WIDTH: 0.990 INCHES MINIMUM AND 1.001 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
224-03-DWG REF DES D1
TRANSISTOR
NSN, MFG P/N
5961015230288
NSN
5961-01-523-0288
MFG
PIVOTAL POWER INC
Description
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
OVERALL LENGTH: 1.497 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
DSEI 2X121
TRANSISTOR
NSN, MFG P/N
5961015230288
NSN
5961-01-523-0288
MFG
IXYS CORPORATION
Description
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE AND SLOT
OVERALL LENGTH: 1.497 INCHES MINIMUM AND 1.505 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
506-0024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015230793
NSN
5961-01-523-0793
MFG
PORTLAND VALVE LLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
741321-A00
TRANSISTOR
NSN, MFG P/N
5961015230948
NSN
5961-01-523-0948
MFG
SPD ELECTRICAL SYSTEMS INC
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 741321-A00
MANUFACTURERS CODE: 30086
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:
Related Searches:
720646-K01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015230955
NSN
5961-01-523-0955
720646-K01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015230955
NSN
5961-01-523-0955
MFG
SPD ELECTRICAL SYSTEMS INC
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 720646-K01
MANUFACTURERS CODE: 30086
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA: