My Quote Request
5961-01-530-5405
20 Products
JANTX1N6515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015305405
NSN
5961-01-530-5405
JANTX1N6515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015305405
NSN
5961-01-530-5405
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MINIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6515
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500N
OVERALL LENGTH: 2.900 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.185 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MAZ302400L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015299657
NSN
5961-01-529-9657
MAZ302400L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015299657
NSN
5961-01-529-9657
MFG
PANASONIC INDUSTRIAL CO AFFIL OF MATSUSHITA ELECTRIC CORP OF AMERICA
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: 4935-01-136-0233, SHOP EQUIPMENT, GUIDED MISSILE SYSTEM; MISSILE, PATRIOT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-236
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.0 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.85 MILLIMETERS MINIMUM AND 3.10 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: PIN 1 ANODE; PIN 2 NOT CONNECTED; PIN 3 CATHODE
TERMINAL LENGTH: 0.2 MILLIMETERS MINIMUM AND 0.6 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
000-126-369
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015299672
NSN
5961-01-529-9672
000-126-369
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015299672
NSN
5961-01-529-9672
MFG
FURUNO USA. INC
Description
III END ITEM IDENTIFICATION: GEARBOX 24 RPM
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE LIMITER RU9099 FR2110
Related Searches:
4183824A17
TRANSISTOR
NSN, MFG P/N
5961015300693
NSN
5961-01-530-0693
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES NOMINAL SOURCE CURRENT
INTERNAL JUNCTION CONFIGURATION: PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL SOURCE SUPPLY VOLTAGE
Related Searches:
JANTX1N3040B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015300884
NSN
5961-01-530-0884
JANTX1N3040B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015300884
NSN
5961-01-530-0884
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3040B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/115
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.371 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
30-251-45AA
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015302463
NSN
5961-01-530-2463
30-251-45AA
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015302463
NSN
5961-01-530-2463
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: V-22 LRIP 1
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)DIODE ASSEMBLY,AIRCRAFT
SPECIAL FEATURES: ESSENTIAL TO WEAPON SYSTEM PERFORMANCE OR OPERATION, OR THE PRESERVATION OF LIFE OR SAFETY OF OPERATING PERSONNEL
Related Searches:
GBJ2508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015302865
NSN
5961-01-530-2865
GBJ2508
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015302865
NSN
5961-01-530-2865
MFG
MICRO COMMERCIAL COMPONENTS CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 19.7 MILLIMETERS MINIMUM AND 20.3 MILLIMETERS MAXIMUM
OVERALL LENGTH: 29.7 MILLIMETERS MINIMUM AND 30.3 MILLIMETERS MAXIMUM
OVERALL WIDTH: 3.4 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
SPECIAL FEATURES: NAME ASSIGNED BY MANUFACTURER GLASS PASSIVATED BRIDGE RECTIFIER
TERMINAL TYPE AND QUANTITY: 4 PIN
Related Searches:
0N634111-1
TRANSISTOR
NSN, MFG P/N
5961015303457
NSN
5961-01-530-3457
MFG
NATIONAL SECURITY AGENCY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG-75A ULTRA
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET DUAL,N-CHANNEL
SPECIAL FEATURES: ESD SENSITIVE,8 PIN PLASTIC TSSOPPACKAGE
Related Searches:
SI6946DQT
TRANSISTOR
NSN, MFG P/N
5961015303457
NSN
5961-01-530-3457
MFG
TEMIC TELEFUNKEN SENSORSYSTEME GMBH
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG-75A ULTRA
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET DUAL,N-CHANNEL
SPECIAL FEATURES: ESD SENSITIVE,8 PIN PLASTIC TSSOPPACKAGE
Related Searches:
JTX2N2222A
TRANSISTOR
NSN, MFG P/N
5961015304341
NSN
5961-01-530-4341
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JTX2N2222A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: EUROFIGHTER 2000
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
91707759
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015304429
NSN
5961-01-530-4429
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 143.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODES
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.102 INCHES MAXIMUM
OVERALL LENGTH: 2.365 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
ZPY7.5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015304429
NSN
5961-01-530-4429
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 143.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODES
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.102 INCHES MAXIMUM
OVERALL LENGTH: 2.365 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.034 INCHES NOMINAL
TERMINAL LENGTH: 1.102 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 7.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
91814511
TRANSISTOR
NSN, MFG P/N
5961015304430
NSN
5961-01-530-4430
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.124 INCHES MINIMUM AND 0.134 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.188 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
IRFD310
TRANSISTOR
NSN, MFG P/N
5961015304430
NSN
5961-01-530-4430
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 0.35 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.124 INCHES MINIMUM AND 0.134 INCHES MAXIMUM
OVERALL LENGTH: 0.238 INCHES MINIMUM AND 0.248 INCHES MAXIMUM
OVERALL WIDTH: 0.188 INCHES MINIMUM AND 0.198 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
0N664100-1
TRANSISTOR
NSN, MFG P/N
5961015304476
NSN
5961-01-530-4476
MFG
NATIONAL SECURITY AGENCY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.50 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: KG-75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.060 INCHES NOMINAL
OVERALL LENGTH: 0.192 INCHES NOMINAL
OVERALL WIDTH: 0.153 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE,CRYPTO APPLICATION
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
FDS6680
TRANSISTOR
NSN, MFG P/N
5961015304476
NSN
5961-01-530-4476
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.50 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: KG-75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.060 INCHES NOMINAL
OVERALL LENGTH: 0.192 INCHES NOMINAL
OVERALL WIDTH: 0.153 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE,CRYPTO APPLICATION
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
72C7441
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015305172
NSN
5961-01-530-5172
72C7441
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015305172
NSN
5961-01-530-5172
MFG
NEWARK ELECTRONICS CORPORATION DBA NEWARK DIV NEWARK
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES REPETITIVE PEAK REVERSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 REPETITIVE PEAK REVERSE VOLTAGE AND 1700.0 NONREPETITIVE PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: CONTROL RECTIFIER PANEL 149B2126G1S2, 149B2125G1S2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.180 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
IRKD56/16A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015305172
NSN
5961-01-530-5172
IRKD56/16A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015305172
NSN
5961-01-530-5172
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES REPETITIVE PEAK REVERSE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1600.0 REPETITIVE PEAK REVERSE VOLTAGE AND 1700.0 NONREPETITIVE PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: CONTROL RECTIFIER PANEL 149B2126G1S2, 149B2125G1S2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.180 INCHES NOMINAL
OVERALL LENGTH: 3.600 INCHES NOMINAL
OVERALL WIDTH: 0.800 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB W/SCREW
Related Searches:
525-11104-12
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015305356
NSN
5961-01-530-5356
525-11104-12
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015305356
NSN
5961-01-530-5356
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
III END ITEM IDENTIFICATION: JOINT STARS
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE ASSEMBLY
Related Searches:
252-7108325PN230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015305405
NSN
5961-01-530-5405
252-7108325PN230
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015305405
NSN
5961-01-530-5405
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MINIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6515
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500N
OVERALL LENGTH: 2.900 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.185 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE