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5961-01-531-3767
20 Products
JANTX1N6338US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015313767
NSN
5961-01-531-3767
JANTX1N6338US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015313767
NSN
5961-01-531-3767
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT OR 13.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6338US
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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0N664129-1
TRANSISTOR
NSN, MFG P/N
5961015309034
NSN
5961-01-530-9034
MFG
NATIONAL SECURITY AGENCY
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET,P-CHAN,30V,11A,SO8
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
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FDS6675
TRANSISTOR
NSN, MFG P/N
5961015309034
NSN
5961-01-530-9034
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: KG75A ULTRAFASTLANE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MOSFET,P-CHAN,30V,11A,SO8
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
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201CMQ045
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015309687
NSN
5961-01-530-9687
201CMQ045
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015309687
NSN
5961-01-530-9687
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: 8S-842/G
MOUNTING METHOD: BASE AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 20.4 MILLIMETERS MINIMUM AND 23.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 90.1 MILLIMETERS MINIMUM AND 92.7 MILLIMETERS MAXIMUM
OVERALL WIDTH: 17.7 MILLIMETERS MINIMUM AND 20.3 MILLIMETERS MAXIMUM
SPECIAL FEATURES: ISOLATED BASE. HIGH TEMPERATURE EPOXY ENCAPSULATION. GUARD RING FOR ENHANCED RUGGEDNESS.
TERMINAL TYPE AND QUANTITY: 3 TERMINAL LUG
Related Searches:
201CNQ045PBF
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015309687
NSN
5961-01-530-9687
201CNQ045PBF
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015309687
NSN
5961-01-530-9687
MFG
VISHAY INTERTECHNOLOGY INC ELECTRIC COMPONENTS GROUP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: 8S-842/G
MOUNTING METHOD: BASE AND UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 20.4 MILLIMETERS MINIMUM AND 23.5 MILLIMETERS MAXIMUM
OVERALL LENGTH: 90.1 MILLIMETERS MINIMUM AND 92.7 MILLIMETERS MAXIMUM
OVERALL WIDTH: 17.7 MILLIMETERS MINIMUM AND 20.3 MILLIMETERS MAXIMUM
SPECIAL FEATURES: ISOLATED BASE. HIGH TEMPERATURE EPOXY ENCAPSULATION. GUARD RING FOR ENHANCED RUGGEDNESS.
TERMINAL TYPE AND QUANTITY: 3 TERMINAL LUG
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106407
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015310775
NSN
5961-01-531-0775
106407
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015310775
NSN
5961-01-531-0775
MFG
LOCKHEED MARTIN SIPPICAN INC. DIV LOCKHEED MARTIN MARION
Description
III END ITEM IDENTIFICATION: MASTER POWER PANEL
Related Searches:
MSC1175M
TRANSISTOR
NSN, MFG P/N
5961015311198
NSN
5961-01-531-1198
MFG
MICROSEMI CORP. - MONTGOMERYVILLE
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RAT 31, RADAR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 250.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES NOMINAL
OVERALL WIDTH: 0.386 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.025 INCHES NOMINAL
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 NOMINAL COLLECTOR SUPPLY VOLTAGE
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DZ000927B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015311215
NSN
5961-01-531-1215
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
Related Searches:
1698689
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015311916
NSN
5961-01-531-1916
1698689
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015311916
NSN
5961-01-531-1916
MFG
VOLVO PENTA OF THE AMERICAS INC
Description
III END ITEM IDENTIFICATION: GENERATOR BTCHG MDL 872235-7
Related Searches:
A3278637
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961015312156
NSN
5961-01-531-2156
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: 0A-9234(V)/G, ELECTRICAL EQUIPMENT GROUP
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE ASSEMBLY, FILTER
INCLOSURE MATERIAL: PLASTIC ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 4.380 INCHES MINIMUM AND 4.620 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 QUICK DISCONNECT, FEMALE AND 1 INSULATED WIRE LEAD W/TERMINAL LUG ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 53.6 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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MRF175GV
TRANSISTOR
NSN, MFG P/N
5961015312790
NSN
5961-01-531-2790
MFG
M/A-COM INC.
Description
CURRENT RATING PER CHARACTERISTIC: 26.00 AMPERES MAXIMUM DARK CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.190 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 1.330 INCHES MINIMUM AND 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
SPECIAL FEATURES: N-CHANNEL ENHANCEMENT MODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO GATE VOLTAGE
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IRF3710
TRANSISTOR
NSN, MFG P/N
5961015312794
NSN
5961-01-531-2794
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 57.00 AMPERES NOMINAL DARK CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.060 INCHES MINIMUM AND 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
H040050
TRANSISTOR
NSN, MFG P/N
5961015312795
NSN
5961-01-531-2795
MFG
STERELA STE TOULOUSAINE D'ETUDES ET DE REALISATIONS EN ELECTRONIQUE E AUTOMATIQUE
Description
CURRENT RATING PER CHARACTERISTIC: 74.00 AMPERES NOMINAL DARK CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.724 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRF4905
TRANSISTOR
NSN, MFG P/N
5961015312795
NSN
5961-01-531-2795
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 74.00 AMPERES NOMINAL DARK CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.724 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRF640N
TRANSISTOR
NSN, MFG P/N
5961015312796
NSN
5961-01-531-2796
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES NOMINAL DARK CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.724 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
30CTQ060
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015312797
NSN
5961-01-531-2797
30CTQ060
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015312797
NSN
5961-01-531-2797
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 REVERSE VOLTAGE, INSTANTANEOUS
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.720 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SUP60N06-18
TRANSISTOR
NSN, MFG P/N
5961015312800
NSN
5961-01-531-2800
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM DARK CURRENT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: MOSFET; N-CHANNEL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JANTX1N6677UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015312886
NSN
5961-01-531-2886
JANTX1N6677UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015312886
NSN
5961-01-531-2886
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6677UR-1
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1216983-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015312923
NSN
5961-01-531-2923
1216983-201
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015312923
NSN
5961-01-531-2923
MFG
RODENBECK ANGELA DBA ANLOY TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: AEWS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.010 INCHES MINIMUM AND 0.014 INCHES MAXIMUM
OVERALL LENGTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
OVERALL WIDTH: 0.030 INCHES MINIMUM AND 0.035 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
94030
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015313627
NSN
5961-01-531-3627
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: NSN 2350-01-456-7884; CARRIER, CARGO; W/S: FIGHTING VEHICLE SYSTEMS, BRADLEY (BFVS)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE UNIDIRECTIONAL TRANSIENT SUPPRESSOR DIODE ARRAY
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.382 INCHES NOMINAL
OVERALL LENGTH: 0.895 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM PEAK PULSE OUTPUT POWER ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NHA IS A CIRCUIT CARD ASSEMBLY
TERMINAL LENGTH: 0.165 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE SUPRESSION VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE