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5961-01-534-2123

20 Products

IRLMS1503

TRANSISTOR

NSN, MFG P/N

5961015342123

NSN

5961-01-534-2123

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IRLMS1503

TRANSISTOR

NSN, MFG P/N

5961015342123

NSN

5961-01-534-2123

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 18.00 AMPERES MAXIMUM DRAIN CURRENT
MOUNTING METHOD: PRESS FIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE

1.5KE33CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339114

NSN

5961-01-533-9114

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1.5KE33CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339114

NSN

5961-01-533-9114

MFG

STMICROELECTRONICS INC

Description

CAPACITANCE RATING IN PICOFARADS: 1350.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.5 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.335 INCHES MINIMUM AND 2.374 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.209 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL BREAKDOWN VOLTAGE, DC

353-5215-110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339114

NSN

5961-01-533-9114

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353-5215-110

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339114

NSN

5961-01-533-9114

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

CAPACITANCE RATING IN PICOFARADS: 1350.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.5 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.335 INCHES MINIMUM AND 2.374 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.209 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL BREAKDOWN VOLTAGE, DC

347059

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

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347059

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

MFG

KIDDE TECHNOLOGIES INC DBA WALTER KIDDE AEROSPACE

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN SILICONE SURFACE MOUNT TRANSISTOR CASE 318E-04,STYLE 1 (TO-261AA)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT

356A1450P51

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

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356A1450P51

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

MFG

BAE SYSTEMS CONTROLS INC.

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN SILICONE SURFACE MOUNT TRANSISTOR CASE 318E-04,STYLE 1 (TO-261AA)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT

PZT2222AT1

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

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PZT2222AT1

TRANSISTOR

NSN, MFG P/N

5961015339148

NSN

5961-01-533-9148

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN SILICONE SURFACE MOUNT TRANSISTOR CASE 318E-04,STYLE 1 (TO-261AA)
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT

353-5375-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339639

NSN

5961-01-533-9639

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353-5375-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339639

NSN

5961-01-533-9639

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ADD-A-PAK GEN V POWER MODULES
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 92.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

IRKC71/06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339639

NSN

5961-01-533-9639

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IRKC71/06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339639

NSN

5961-01-533-9639

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ADD-A-PAK GEN V POWER MODULES
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 92.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

353-5156-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015339785

NSN

5961-01-533-9785

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353-5156-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015339785

NSN

5961-01-533-9785

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHASE CONTROL THYRISTORS
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 42.000 INCHES MAXIMUM
OVERALL LENGTH: 1.925 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

ST230C08C0

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015339785

NSN

5961-01-533-9785

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ST230C08C0

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015339785

NSN

5961-01-533-9785

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PHASE CONTROL THYRISTORS
INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 42.000 INCHES MAXIMUM
OVERALL LENGTH: 1.925 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

353-3691-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339944

NSN

5961-01-533-9944

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353-3691-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339944

NSN

5961-01-533-9944

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM AND 0.016 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 410.0 MAXIMUM FORWARD VOLTAGE, DC

5082-2800/1N5711

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339944

NSN

5961-01-533-9944

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5082-2800/1N5711

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015339944

NSN

5961-01-533-9944

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.014 INCHES MINIMUM AND 0.016 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 410.0 MAXIMUM FORWARD VOLTAGE, DC

0P803SL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

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0P803SL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

MFG

VISHAY INTERTECHNOLOGY INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HERMETIC SILICON PHOTOTRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.510 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

352-5047-020

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

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352-5047-020

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

MFG

CONTINENTAL ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HERMETIC SILICON PHOTOTRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.510 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

BPW37

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

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BPW37

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HERMETIC SILICON PHOTOTRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.510 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

BPX43-2

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

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BPX43-2

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015339986

NSN

5961-01-533-9986

MFG

SIEMENS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MINIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: HERMETIC SILICON PHOTOTRANSISTOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 600.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.510 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

079654

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015340937

NSN

5961-01-534-0937

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079654

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015340937

NSN

5961-01-534-0937

MFG

BECKETT R W CORP

Description

III END ITEM IDENTIFICATION: 3510-01-527-2209 (GREEN) X 3510-01-527-2210 (TAN)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: CATALOG ITEM NAME: CADCELL FLAME DET
SPECIAL FEATURES: TM 10-3510-226-23P

568-0145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015341822

NSN

5961-01-534-1822

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568-0145

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015341822

NSN

5961-01-534-1822

MFG

ALLIED ELECTRONICS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.161 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

245NQ015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015342044

NSN

5961-01-534-2044

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245NQ015

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015342044

NSN

5961-01-534-2044

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CAPACITANCE RATING IN PICOFARADS: 15800.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 20000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: TACTICAL AIR DEFENSE RADAR SYSTEM (TADRS)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL HEIGHT: 14.61 MILLIMETERS MINIMUM AND 15.11 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.61 MILLIMETERS MINIMUM AND 39.62 MILLIMETERS MAXIMUM
OVERALL WIDTH: 18.42 MILLIMETERS MINIMUM AND 19.69 MILLIMETERS MAXIMUM
SPECIAL FEATURES: MOUNTING SLOT 3.86 TO 4.11 MILLIMETERS WIDTH; MOUNTING HOLE 3.86 TO 4.11 MILLIMETERS DIAMETER; TERMINAL SCREW UNC THREADS 0.240 INCH DIAMETER 20 THREADS PER INCH CLASS 2B; OUTLINE D-67 HALF PAK MODULE
TERMINAL TYPE AND QUANTITY: 1 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 25.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

242NQ030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015342045

NSN

5961-01-534-2045

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242NQ030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015342045

NSN

5961-01-534-2045

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 240.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 27000.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: TACTICAL AIR DEFENSE RADAR SYSTEM (TADRS)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL HEIGHT: 14.99 MILLIMETERS MINIMUM AND 15.75 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.61 MILLIMETERS MINIMUM AND 39.52 MILLIMETERS MAXIMUM
OVERALL WIDTH: 18.42 MILLIMETERS MINIMUM AND 19.59 MILLIMETERS MAXIMUM
SPECIAL FEATURES: HALF PAK MODULE CASE STYLE; ENCLOSED USING HIGH TEMPERATURE EPOXY; MAXIMUM FORWARD VOLTAGE DROP 0.51 VOLTS AT 240.0 AMPS 25.0 DEGREES C; 0.42 VOLTS AT 240.0 AMPS 125.0 DEGREES C; MAXIMUM STORAGE TEMPERATURE MINUS 55.0 TO PLUS 150.0 DEGREES C; TERMINAL
TERMINAL TYPE AND QUANTITY: 1 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
~1: SCREW THREADS 0.250 INCH DIAMETER BY 20 THREADS PER INCH UNC CLASS 2B