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5961-01-543-5490
20 Products
T5961-0054-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015435490
NSN
5961-01-543-5490
T5961-0054-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015435490
NSN
5961-01-543-5490
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
MMBT2222A
TRANSISTOR
NSN, MFG P/N
5961015432037
NSN
5961-01-543-2037
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,NPN,GENERAL PURPOSE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
Q12-2222-101
TRANSISTOR
NSN, MFG P/N
5961015432037
NSN
5961-01-543-2037
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,NPN,GENERAL PURPOSE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
T5961-0025-003
TRANSISTOR
NSN, MFG P/N
5961015432037
NSN
5961-01-543-2037
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,NPN,GENERAL PURPOSE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD SENSITIVE
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
MMBT2907A
TRANSISTOR
NSN, MFG P/N
5961015432211
NSN
5961-01-543-2211
MFG
DAICO INDUSTRIES INC.
Description
III END ITEM IDENTIFICATION: AN/SSQ-124(V) 5, TACTICAL EXPLOITATION SYSTEM. AN/SSQ-124(V) 6, TACTICAL EXPLOITATION SYSTEM.AN/SSQ-124(V) 3, TACTICAL EXPLOITATION SYSTEM.AN/SSQ-124(V) 4, TACTICAL EXPLOITATION SYSTEM.
Related Searches:
MMBT2222A
TRANSISTOR
NSN, MFG P/N
5961015432216
NSN
5961-01-543-2216
MFG
DAICO INDUSTRIES INC.
Description
III END ITEM IDENTIFICATION: AN/SSQ-124(V) 5, TACTICAL EXPLOITATION SYSTEM. AN/SSQ-124(V) 6, TACTICAL EXPLOITATION SYSTEM.AN/SSQ-124(V) 3, TACTICAL EXPLOITATION SYSTEM.AN/SSQ-124(V) 4, TACTICAL EXPLOITATION SYSTEM.
Related Searches:
141012
TRANSISTOR
NSN, MFG P/N
5961015432285
NSN
5961-01-543-2285
MFG
KAHLENBERG BROS. CO. DBA KAHLENBERG BROTHERS COMPANY
Description
III END ITEM IDENTIFICATION: CONTROL UNIT, CENTRAL P492-09
Related Searches:
141032
TRANSISTOR
NSN, MFG P/N
5961015432301
NSN
5961-01-543-2301
MFG
KAHLENBERG BROS. CO. DBA KAHLENBERG BROTHERS COMPANY
Description
III END ITEM IDENTIFICATION: CONTROL UNIT, CENTRAL P492-09
Related Searches:
7333486-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015432452
NSN
5961-01-543-2452
7333486-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015432452
NSN
5961-01-543-2452
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: AN/BQN-17A, DEPTH SOUNDER SONAR
Related Searches:
GBPC2502
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015432452
NSN
5961-01-543-2452
GBPC2502
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015432452
NSN
5961-01-543-2452
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CRITICALITY CODE JUSTIFICATION: AGAV
III END ITEM IDENTIFICATION: AN/BQN-17A, DEPTH SOUNDER SONAR
Related Searches:
200620506
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015432543
NSN
5961-01-543-2543
200620506
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015432543
NSN
5961-01-543-2543
MFG
WARNER ROBINS AIR LOGISTICS CENTER
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: THREADED BASE
III END ITEM IDENTIFICATION: NHA, AMPLIFIER,INTERMEDIATE FREQUENCY 5996-00-411-3464
MATERIAL: STEEL COMP 303
MOUNTING FACILITY TYPE AND QUANTITY: 1 THREADED BASE SINGLE MOUNTING FACILITY
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE HOLDER ASSEMBLY
SURFACE TREATMENT: NICKEL
Related Searches:
A26854
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015432737
NSN
5961-01-543-2737
MFG
MBDA UK LTD
Description
CURRENT RATING PER CHARACTERISTIC: 7.80 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6329
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500/533 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N6329
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015432737
NSN
5961-01-543-2737
JANTX1N6329
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015432737
NSN
5961-01-543-2737
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 7.80 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6329
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL HEIGHT: 0.070 INCHES MINIMUM AND 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500/533 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
7648215-1
RADIO LID
NSN, MFG P/N
5961015432845
NSN
5961-01-543-2845
MFG
NAVAL SEA SYSTEMS COMMAND
Description
III END ITEM IDENTIFICATION: VEHICLE COMM SUBSYSTEM, SDV MK8 MOD1 (NEW BUILD)
Related Searches:
0N308942-1
TRANSISTOR
NSN, MFG P/N
5961015434024
NSN
5961-01-543-4024
MFG
NATIONAL SECURITY AGENCY
Description
III END ITEM IDENTIFICATION: KGV-6/TSEC, SECURE DATA UNIT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY) TRANSISTOR
Related Searches:
4SL004-1
TRANSISTOR
NSN, MFG P/N
5961015434534
NSN
5961-01-543-4534
MFG
SAC-TEC LABS INC .
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM DRAIN CURRENT AND 150.00 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: FA-18
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.125 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
H980122-001B
TRANSISTOR
NSN, MFG P/N
5961015434534
NSN
5961-01-543-4534
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM DRAIN CURRENT AND 150.00 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: FA-18
III PART NAME ASSIGNED BY CONTROLLING AGENCY: POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.125 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
STN2N10L
TRANSISTOR
NSN, MFG P/N
5961015434640
NSN
5961-01-543-4640
MFG
STMICROELECTRONICS INC
Description
III END ITEM IDENTIFICATION: HARD DISK DRIVERS; SMALL MOTOR CURRENT SENSE CIRCUITS; DC-DC CONVERTERS AND POWER SUPPLIES
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.5 MILLIMETERS MINIMUM AND 1.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 6.7 MILLIMETERS MINIMUM AND 7.3 MILLIMETERS MAXIMUM
OVERALL WIDTH: 6.3 MILLIMETERS MINIMUM AND 6.7 MILLIMETERS MAXIMUM
SPECIAL FEATURES: 150 DEG OPERATING TEMP
Related Searches:
144A72282P2
TRANSISTOR
NSN, MFG P/N
5961015435282
NSN
5961-01-543-5282
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: MULTI-PLATFORM
Related Searches:
SMLJ18A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015435490
NSN
5961-01-543-5490
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, PEAK
III END ITEM IDENTIFICATION: C-17A AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC