My Quote Request
5961-01-545-6286
20 Products
MAD1103
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
MAD1103
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015456286
NSN
5961-01-545-6286
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: ELECTRONIC UNIT FIRE CONTROL COMPUTER M1A2 ABRAMS FOV NSN 1220-01-531-5874
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE DIODE ARRAY
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
SPECIAL FEATURES: SEMICONDUCTOR DEVICE DIODE ARRAY WORKING PEAK REVERSE VOLTAGE 75 V, DC FORWARD CURRENT 400 MA, PEAK FORWARD SURGE CURRENT 2.0A, POWER DISSIPATAION PER JUNCTION AT 25 DEGREES C 500 MW
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JANTX1N14488US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015456326
NSN
5961-01-545-6326
JANTX1N14488US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015456326
NSN
5961-01-545-6326
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.80 MILLIAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT AND 16.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4488US
III END ITEM IDENTIFICATION: POWER SUPPLY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEV
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406G
OVERALL LENGTH: 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT CASE-SQUARE END CAP
TERMINAL CIRCLE DIAMETER: 0.028 INCHES MINIMUM AND 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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JANTX1N4469US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015456864
NSN
5961-01-545-6864
JANTX1N4469US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015456864
NSN
5961-01-545-6864
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 95.00 AMPERES NOMINAL FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4469US
III END ITEM IDENTIFICATION: PROCESSOR, CCA; MCM 9-14 AFT DECK EQUIPMENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: SEMICONDUCTOR DEV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/406
OVERALL HEIGHT: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.091 INCHES MINIMUM AND 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: SURFACE MOUNT; SQUARE END CAP
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 81349-MIL-S-19500/406C SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 15.75 MAXIMUM REGULATOR VOLTAGE, DC AT MAXIMUM RATED CURRENT
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JANTX1N4626UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015457716
NSN
5961-01-545-7716
JANTX1N4626UR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015457716
NSN
5961-01-545-7716
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1400.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4626UR-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: UR IN THE P/N INDICATES UNLEADED OR SURFACE MOUNTED (ROUND END-CAP DIODES), THE -1 INDICATES METALLURGICAL BOND.
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
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JANTX1N6118AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015458174
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JANTX1N6118AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015458174
NSN
5961-01-545-8174
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM REGULATOR CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6118AUS
III END ITEM IDENTIFICATION: ANALOB CARD, A1, A2
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEV
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.137 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.134 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
TERMINAL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 CLAMP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015458280
NSN
5961-01-545-8280
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015458280
NSN
5961-01-545-8280
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, ARRAY
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.228 INCHES MINIMUM AND 0.244 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.013 INCHES MINIMUM AND 0.020 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR
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MMBT5179
TRANSISTOR
NSN, MFG P/N
5961015458517
NSN
5961-01-545-8517
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, NPN, RF
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.9 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 1.8 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.3 MILLIMETERS MINIMUM AND 0.5 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
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MMBT2369ALT1
TRANSISTOR
NSN, MFG P/N
5961015458542
NSN
5961-01-545-8542
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, NPN
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.007 INCHES MAXIMUM
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.024 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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A3263503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015458568
NSN
5961-01-545-8568
A3263503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015458568
NSN
5961-01-545-8568
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)IC HIGH FREQUENCY;(DRAWING)IC HIGH FREQUENCY, NPN TRANSISTOR ARRAY(A3263503)
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.780 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: OPERATING TEMPERATURE:-55 TO 125 DEGREES CELSIUS
TERMINAL CIRCLE DIAMETER: 0.008 INCHES MINIMUM AND 0.012 INCHES MAXIMUM
TERMINAL LENGTH: 0.020 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR
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A3263504
TRANSISTOR
NSN, MFG P/N
5961015458601
NSN
5961-01-545-8601
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR, DEVIC;(DRAWING)SEMICONDUCTOR DEVICE, TRANSISTOR, AMPLIFIER, PNP, SILICON(A326504)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.650 INCHES MINIMUM AND 0.685 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: OPERATING TEMPERATURE:-65 TO 200 DEGREES CELSIUS
TERMINAL TYPE AND QUANTITY: 7 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
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A3263509
TRANSISTOR
NSN, MFG P/N
5961015458609
NSN
5961-01-545-8609
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: CIRCUIT CARD ASSY
III PART NAME ASSIGNED BY CONTROLLING AGENCY: (INAVY)SEMICONDUCTOR DEVIC;(DRAWING)SEMICONDUCTOR DEVICE, TRANSISTOR, AMPLIFIER, PNP, SILICON(A3263509)
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.670 INCHES MINIMUM AND 0.710 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: OPERATING TEMPERATURE:-65 TO 200 DEGREES CELSIUS
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC
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VT93N2
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015458679
NSN
5961-01-545-8679
MFG
PERKINELMER ILLUMINATION INC
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
RESPONSE TIME: 35.0 MILLISECONDS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM PEAK-POINT VOLTAGE
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FK23132P1
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961015459477
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5961-01-545-9477
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT-FIRST (F18 E/F) NHA: GENERATOR,ALTERNATING
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HSMS-2820-BLK
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015460145
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015460145
NSN
5961-01-546-0145
MFG
HEWLETT-PACKARD CO COMPONENTS GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR,SCHOTTY DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.018 INCHES MINIMUM AND 0.027 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.027 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 340.0 MAXIMUM FORWARD VOLTAGE, DC
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MMBT5771
TRANSISTOR
NSN, MFG P/N
5961015460153
NSN
5961-01-546-0153
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,PNP
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.027 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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MMBF5485
TRANSISTOR
NSN, MFG P/N
5961015460172
NSN
5961-01-546-0172
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,PNP
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.003 INCHES MINIMUM AND 0.006 INCHES MAXIMUM
TERMINAL LENGTH: 0.018 INCHES MINIMUM AND 0.027 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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HFA3096B
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015460239
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5961-01-546-0239
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015460239
NSN
5961-01-546-0239
MFG
INTERSIL CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR ARRAY
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.385 INCHES MINIMUM AND 0.393 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.007 INCHES MINIMUM AND 0.009 INCHES MAXIMUM
TERMINAL LENGTH: 0.016 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC SINGLE TRANSISTOR
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99211882
TRANSISTOR
NSN, MFG P/N
5961015460696
NSN
5961-01-546-0696
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 3.10 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: NSN 1430-01-448-9835; COMMUNICATION RELAY GROUP,GUIDED MISSILE SYSTEM,TRUCK MOUNTED; W/S: MISSILE, PATRIOT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER,SEMICONDUCTOR
OVERALL HEIGHT: 0.053 INCHES MINIMUM AND 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.189 INCHES MINIMUM AND 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MINIMUM AND 0.157 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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NSN, MFG P/N
5961015460696
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5961-01-546-0696
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INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 3.10 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: NSN 1430-01-448-9835; COMMUNICATION RELAY GROUP,GUIDED MISSILE SYSTEM,TRUCK MOUNTED; W/S: MISSILE, PATRIOT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: RECTIFIER,SEMICONDUCTOR
OVERALL HEIGHT: 0.053 INCHES MINIMUM AND 0.069 INCHES MAXIMUM
OVERALL LENGTH: 0.189 INCHES MINIMUM AND 0.197 INCHES MAXIMUM
OVERALL WIDTH: 0.150 INCHES MINIMUM AND 0.157 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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4030A1000 ITEM NO 170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015460889
NSN
5961-01-546-0889
4030A1000 ITEM NO 170
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015460889
NSN
5961-01-546-0889
MFG
L-3 COMMUNICATIONS WESTWOOD CORPORATION DBA EDI DIVISION DIV TANO DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE