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5962-00-103-0515

20 Products

V00138-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030515

NSN

5962-00-103-0515

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V00138-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030515

NSN

5962-00-103-0515

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507852 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

507883-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

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507883-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND INTERNALLY COMPENSATED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507883 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

HL08037

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

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HL08037

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND INTERNALLY COMPENSATED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507883 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

TS-3593

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

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TS-3593

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

MFG

MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND INTERNALLY COMPENSATED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507883 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

UA726

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

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UA726

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962001030516

NSN

5962-00-103-0516

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 CONVERTER, DC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND INTERNALLY COMPENSATED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507883 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

507876-9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030524

NSN

5962-00-103-0524

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507876-9

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030524

NSN

5962-00-103-0524

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.050 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.150 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 507876-9
DESIGN FUNCTION AND QUANTITY: 1 ADDER, FULL, GATED
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:

SN4632

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030524

NSN

5962-00-103-0524

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SN4632

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030524

NSN

5962-00-103-0524

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.150 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 507876-9
DESIGN FUNCTION AND QUANTITY: 1 ADDER, FULL, GATED
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:

507876-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030988

NSN

5962-00-103-0988

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507876-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030988

NSN

5962-00-103-0988

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND BODY GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SN4426

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030988

NSN

5962-00-103-0988

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SN4426

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030988

NSN

5962-00-103-0988

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD AND BODY GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

0114421

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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0114421

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

HEIDELBERGER DRUCKMASCHINEN AG PLANN ING SERVICE PARTS PREPRESS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

025709

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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025709

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

BEI SENSORS & SYSTEMS COMPANY INC. DBA SYSTRON DONNER INERTIAL DIV SYSTRON DONNER INERTIAL DIVISION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

156-0043-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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156-0043-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

170-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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170-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

DATAPOINT CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

1820-0328

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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1820-0328

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

HEWLETT-PACKARD LTD

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

203024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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203024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

CIPHER DATA PRODUCTS INC OEM MARKETING DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

21-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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21-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

PALOMAR PRODUCTS INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

28731-188

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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28731-188

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

KIDDE GRAVINER LTD

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

2L5441-005-880022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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2L5441-005-880022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

SELEX COMMUNICATIONS GMBH

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

305-513

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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305-513

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

RS COMPONENTS LIMITED

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

310200P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

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310200P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001030990

NSN

5962-00-103-0990

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT