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5962-00-133-1539

20 Products

SG190

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

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SG190

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 45.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

531878-143

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328486

NSN

5962-00-132-8486

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531878-143

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328486

NSN

5962-00-132-8486

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-143
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

SN7493J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328486

NSN

5962-00-132-8486

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SN7493J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328486

NSN

5962-00-132-8486

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-143
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-41

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

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531878-41

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-41
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

9622DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

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9622DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-41
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

TS-2482

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

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TS-2482

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328530

NSN

5962-00-132-8530

MFG

MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-41
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328546

NSN

5962-00-132-8546

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531878-123

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328546

NSN

5962-00-132-8546

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 535194-81
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

DM101-81

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328546

NSN

5962-00-132-8546

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DM101-81

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328546

NSN

5962-00-132-8546

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 535194-81
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-125

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328550

NSN

5962-00-132-8550

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531878-125

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328550

NSN

5962-00-132-8550

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-125
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

DM101-83

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328550

NSN

5962-00-132-8550

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DM101-83

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328550

NSN

5962-00-132-8550

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-125
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328579

NSN

5962-00-132-8579

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531878-133

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328579

NSN

5962-00-132-8579

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-133
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

DM100-4

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328579

NSN

5962-00-132-8579

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DM100-4

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328579

NSN

5962-00-132-8579

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-133
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-134

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328581

NSN

5962-00-132-8581

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531878-134

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328581

NSN

5962-00-132-8581

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-134
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

DM100-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328581

NSN

5962-00-132-8581

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DM100-5

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328581

NSN

5962-00-132-8581

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-134
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

531878-135

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328587

NSN

5962-00-132-8587

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531878-135

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328587

NSN

5962-00-132-8587

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-135
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

SN13701

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328587

NSN

5962-00-132-8587

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SN13701

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001328587

NSN

5962-00-132-8587

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 531878-135
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 96214
TEST DATA DOCUMENT: 81349-MIL-STD-883 LEVEL D STANDARD
THE MANUFACTURERS DATA:

351-7101-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

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351-7101-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 45.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

MC512F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

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MC512F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 45.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

RG190CJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

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RG190CJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 45.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

RG190K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

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RG190K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962001331539

NSN

5962-00-133-1539

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 45.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT