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5962-00-253-7591

20 Products

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

VCM-B40

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002528041

NSN

5962-00-252-8041

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VCM-B40

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002528041

NSN

5962-00-252-8041

MFG

AXSYS TECHNOLOGIES INC . DIV MOTION CONTROL PRODUCTS DIVISION

Description

BODY HEIGHT: 0.510 INCHES MAXIMUM
BODY LENGTH: 2.160 INCHES MINIMUM AND 2.180 INCHES MAXIMUM
BODY WIDTH: 1.525 INCHES MINIMUM AND 1.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, AC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-711467 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS NOMINAL POWER SOURCE

619126-13

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002528425

NSN

5962-00-252-8425

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619126-13

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002528425

NSN

5962-00-252-8425

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
III OVERALL WIDTH: 0.760 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619126 DRAWING

HM9-031-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002528425

NSN

5962-00-252-8425

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HM9-031-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002528425

NSN

5962-00-252-8425

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
III OVERALL WIDTH: 0.760 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 37695-619126 DRAWING

84382

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

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84382

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 0.625 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 15280
MFR SOURCE CONTROLLING REFERENCE: 84382-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

AD0-52A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

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AD0-52A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

MFG

ADVANCED ANALOG INC. DBA INTERNATIONAL RECTIFIER

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 0.625 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 15280
MFR SOURCE CONTROLLING REFERENCE: 84382-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

AD0-52AS1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

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AD0-52AS1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 0.625 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 15280
MFR SOURCE CONTROLLING REFERENCE: 84382-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

SC-5256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

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SC-5256

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962002529750

NSN

5962-00-252-9750

MFG

HUGHES AUTOMATION SYSTEMS CORP

Description

BODY HEIGHT: 0.500 INCHES NOMINAL
BODY LENGTH: 0.625 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 15280
MFR SOURCE CONTROLLING REFERENCE: 84382-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 7 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

3043642

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002531977

NSN

5962-00-253-1977

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3043642

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962002531977

NSN

5962-00-253-1977

MFG

RAYTHEON COMPANY

Description

DESIGN FUNCTION AND QUANTITY: 1 POWER SUPPLY
INCLOSURE MATERIAL: METAL OR PLASTIC OR CERAMIC

37654870-002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

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37654870-002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

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MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537485

NSN

5962-00-253-7485

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

37654870-003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

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37654870-003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

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MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537486

NSN

5962-00-253-7486

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

37654870-004

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

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37654870-004

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

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MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537588

NSN

5962-00-253-7588

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

37654870-005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

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37654870-005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

MFG

RAYTHEON CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

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MM6331

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962002537591

NSN

5962-00-253-7591

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND W/DISABLE AND W/ENABLE AND POSITIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654870 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE