My Quote Request
5962-00-286-3187
20 Products
5E8071-29-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002863187
NSN
5962-00-286-3187
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 5E8071-29-0001
DESIGN FUNCTION AND QUANTITY: 1 ADDER, FULL, BINARY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 73030
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
UA709DN
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962002853298
NSN
5962-00-285-3298
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.740 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: SN52709BN
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 01295
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
Related Searches:
S5490A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853300
NSN
5962-00-285-3300
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: S5490A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 18324
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
203046
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
CIPHER DATA PRODUCTS INC OEM MARKETING DIV
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
537804-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
703PS147
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
BAE SYSTEMS OPERATIONS LTD
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
703PS147-9
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
9631-1054
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
ATLANTIC INERTIAL SYSTEMS LIMITED
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
LX0269026
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
THALES OPTRONICS LIMITED
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S54123B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S54123F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54123J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54123J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54123J00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SS-31123-501
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853302
NSN
5962-00-285-3302
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 56.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AH0014CD
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853303
NSN
5962-00-285-3303
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
DESIGN CONTROL REFERENCE: AH0014CD
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED
III SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
BJ2915248
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002853303
NSN
5962-00-285-3303
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
DESIGN CONTROL REFERENCE: AH0014CD
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED
III SUPPLEMENTARY FEATURES: 21DEC00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
118140-201
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962002856190
NSN
5962-00-285-6190
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
LM741
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962002856190
NSN
5962-00-285-6190
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5E8071-19-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962002863171
NSN
5962-00-286-3171
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 5E8071-19-0001
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 73030
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA: